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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Shiga; Aiko
Address:
Atsugi, JP
No. of patents:
16
Patents:












Patent Number Title Of Patent Date Issued
8198173 Method for manufacturing SOI substrate June 12, 2012
To improve bonding strength and improve reliability of an SOI substrate in bonding a semiconductor substrate and a base substrate to each other even when an insulating film containing nitrogen is used as a bonding layer, an oxide film is provided on the semiconductor substrate side, a
7943885 Laser irradiation method and method of manufacturing semiconductor device May 17, 2011
By laser beam being slantly incident to the diffractive optics, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the device has a very simple configuration, the optical a
7829432 Method for manufacturing SOI substrate November 9, 2010
To improve bonding strength and improve reliability of an SOI substrate in bonding a semiconductor substrate and a base substrate to each other even when an insulating film containing nitrogen is used as a bonding layer, an oxide film is provided on the semiconductor substrate side, a
7670935 Manufacturing method of semiconductor device March 2, 2010
Island-like semiconductor films and markers are formed prior to laser irradiation. Markers are used as positional references so as not to perform laser irradiation all over the semiconductor within a substrate surface, but to perform a minimum crystallization on at least indispensabl
7635883 Method for manufacturing semiconductor device December 22, 2009
A method for manufacturing a semiconductor device having steps of forming an amorphous semiconductor on a substrate having an insulating surface; patterning the amorphous semiconductor to form plural first island-like semiconductors; irradiating a linearly condensed laser beam on the plu
7510920 Manufacturing method for a thin film transistor that uses a pulse oscillation laser crystallize March 31, 2009
Position control of a crystal grain in accordance with an arrangement of a TFT is achieved, and at the same time, a processing speed during a crystallization process is increased. More specifically, there is provided a manufacturing method for a semiconductor device, in which crystal
7279372 Manufacturing method of semiconductor device October 9, 2007
Island-like semiconductor films and markers are formed prior to laser irradiation. Markers are used as positional references so as not to perform laser irradiation all over the semiconductor within a substrate surface, but to perform a minimum crystallization on at least indispensabl
7217952 Method of manufacturing a semiconductor device and semiconductor manufacturing apparatus May 15, 2007
A technique for manufacturing TFTs having little dispersion in their electrical characteristics is provided. Contamination of a semiconductor film is reduced by performing oxidation processing having an organic matter removing effect, forming a clean oxide film, after removing a natu
7129121 Method for manufacturing semiconductor device October 31, 2006
A method for manufacturing a semiconductor device having steps of forming an amorphous semiconductor on a substrate having an insulating surface; patterning the amorphous semiconductor to form plural first island-like semiconductors; irradiating a linearly condensed laser beam on the plu
7109069 Semiconductor device and method of manufacturing the same September 19, 2006
In a conventional method of crystallization using a laser beam, variance (or dispersion) in a TFT characteristic becomes large, which causes various functions of a semiconductor device comprising TFTs as components of its electronic circuit to be restrained.A first shape of semiconductor
7015079 Semiconductor film, semiconductor device, and method of manufacturing the same including adding March 21, 2006
By adding a novel improvement to the technique disclosed in JP 8-78329 A, a manufacturing method in which film characteristics of a semiconductor film having a crystalline structure are improved is provided. In addition, a TFT having superior TFT characteristics, such as field effect
6979605 Manufacturing method for a semiconductor device using a marker on an amorphous semiconductor fil December 27, 2005
Position control of a crystal grain in accordance with an arrangement of a TFT is achieved, and at the same time, a processing speed during a crystallization process is increased. More specifically, there is provided a manufacturing method for a semiconductor device, in which crystal hav
6911358 Method for manufacturing semiconductor device June 28, 2005
A method for manufacturing a semiconductor device having steps of forming an amorphous semiconductor on a substrate having an insulating surface; patterning the amorphous semiconductor to form plural first island-like semiconductors; irradiating a linearly condensed laser beam on the plu
6777713 Irregular semiconductor film, having ridges of convex portion August 17, 2004
By adding a novel improvement to the technique disclosed in JP 8-78329 A, a manufacturing method in which film characteristics of a semiconductor film having a crystalline structure are improved is provided. In addition, a TFT having superior TFT characteristics, such as field effect mob
6767799 Laser beam irradiation method July 27, 2004
A laser beam irradiation method that achieves uniform crystallization, even if a film thickness of an a-Si film or the like fluctuates, is provided. The present invention provides a laser beam irradiation method in which a non-single crystal semiconductor film is formed on a substrate ha
6764886 Manufacturing method of semiconductor device July 20, 2004
Island-like semiconductor films and markers are formed prior to laser irradiation. Markers are used as positional references so as not to perform laser irradiation all over the semiconductor within a substrate surface, but to perform a minimum crystallization on at least indispensabl










 
 
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