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Inventor: Shibata; Satoshi
Address: Takaoka, JP
No. of patents: 4
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 7103271 |
Light irradiation heat treatment method and light irradiation heat treatment apparatus |
September 5, 2006 |
| A light irradiation heat treatment apparatus and method may use a plane-shaped light irradiation heating component, facing one surface of a workpiece supported in a furnace, to raise the temperature of the workpiece. The temperature of the workpiece is raised by setting an intensity |
| 6666577 |
Method for predicting temperature, test wafer for use in temperature prediction, and method for |
December 23, 2003 |
| A test wafer for use in wafer temperature prediction is prepared. The test wafer includes: first semiconductor layer formed in a crystalline state; second semiconductor layer formed in an amorphous state on the first semiconductor layer; and light absorption film formed over the second |
| 6616331 |
Method for predicting temperature and test wafer for use in temperature prediction |
September 9, 2003 |
| A test wafer for use in temperature prediction is prepared. The test wafer includes: first semiconductor layer formed in a crystalline state; second semiconductor layer formed in an amorphous state on the first semiconductor layer; and passivation film formed over the second semicond |
| 6128084 |
Evaluation method of semiconductor layer, method for fabricating semiconductor device, and stora |
October 3, 2000 |
| Measurement light, which has been emitted from a Xe light source (20) and then linearly polarized by a polarizer (21), is made to be incident at a tilt angle on a region in a silicon substrate (11) with crystallinity disordered by the implantation of dopant ions. And the spectra of c |
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