Inventor:Sheng; William W.
No. of patents:1
||Title Of Patent
||Selective irradiation of thyristors
||January 16, 1979|
|The dv/dt characteristics of a bidirectional thyristor are improved by irradiating selected portions of the device with high energy crystal lattice-damaging particles. In an exemplary embodiment, the commutating dv/dt of a triac is enhanced by the masked, selective irradiation of the |