| Patent Number |
Title Of Patent |
Date Issued |
| 8133817 |
Shallow trench isolation etch process |
March 13, 2012 |
| Methods for fabricating one or more shallow trench isolation (STI) structures are provided herein. In some embodiments, a method for fabricating one or more shallow trench isolation (STI) structures may include providing a substrate having a patterned mask layer disposed thereon to d |
| 8101525 |
Method for fabricating a semiconductor device having a lanthanum-family-based oxide layer |
January 24, 2012 |
| Methods for fabricating a semiconductor device having a lanthanum-family-based oxide layer are described. A gate stack having a lanthanum-family-based oxide layer is provided above a substrate. At least a portion of the lanthanum-family-based oxide layer is modified to form a lanthan |
| 7964512 |
Method for etching high dielectric constant materials |
June 21, 2011 |
| In one implementation, a method is provided for etching a high k dielectric material in a plasma etch reactor, the method comprising plasma etching the high k dielectric material with a first plasma gas reactant mixture having BCl.sub.3. The high k dielectric material may include Al. |
| 7910488 |
Alternative method for advanced CMOS logic gate etch applications |
March 22, 2011 |
| Methods for etching, such as for fabricating a CMOS logic gate are provided herein. In some embodiments, a method of etching includes (a) providing a substrate having a first stack and a second stack disposed thereupon, the first stack comprising a high-k dielectric layer, a metal la |
| 7780862 |
Device and method for etching flash memory gate stacks comprising high-k dielectric |
August 24, 2010 |
| In one implementation, a method is provided capable of etching a wafer to form devices including a high-k dielectric layer. The method includes etching an upper conductive material layer in a first plasma chamber with a low cathode temperature, transferring the wafer to a second chamber |
| 7754610 |
Process for etching tungsten silicide overlying polysilicon particularly in a flash memory |
July 13, 2010 |
| A method of plasma etching tungsten silicide over polysilicon particularly useful in fabricating flash memory having both a densely packed area and an open (iso) area requiring a long over etch due to microloading. Wafer biasing is decreased in the over etch. The principal etchant includ |
| 7718081 |
Techniques for the use of amorphous carbon (APF) for various etch and litho integration schemes |
May 18, 2010 |
| A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon |
| 7648914 |
Method for etching having a controlled distribution of process results |
January 19, 2010 |
| Embodiments of the invention generally provide methods for etching a substrate. In one embodiment, the method includes determining a substrate temperature target profile that corresponds to a uniform deposition rate of etch by-products on a substrate, preferentially regulating a temp |
| 7504338 |
Method of pattern etching a silicon-containing hard mask |
March 17, 2009 |
| Disclosed herein is a method of pattern etching a layer of a silicon-containing dielectric material. The method employs a plasma source gas including CF.sub.4 to CHF.sub.3, where the volumetric ratio of CF.sub.4 to CHF.sub.3 is within the range of about 2:3 to about 3:1; more typical |
| 7368394 |
Etch methods to form anisotropic features for high aspect ratio applications |
May 6, 2008 |
| Methods for forming anisotropic features for high aspect ratio application in etch process are provided in the present invention. The methods described herein advantageously facilitates profile and dimension control of features with high aspect ratios through a sidewall passivation m |
| 7064078 |
Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme |
June 20, 2006 |
| A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon |
| 6933243 |
High selectivity and residue free process for metal on thin dielectric gate etch application |
August 23, 2005 |
| Methods for etching electrodes formed directly on gate dielectrics are provided. In one aspect, an etch process is provided which includes a main etch step, a soft landing step, and an over etch step. In another aspect, a method is described which includes performing a main etch having g |
| 6797188 |
Self-cleaning process for etching silicon-containing material |
September 28, 2004 |
| A method of etching a silicon-containing material in a substrate comprises placing the substrate in a process chamber and exposing the substrate to an energized gas comprising fluorine-containing gas, chlorine-containing gas and sidewall-passivation gas. The silicon-containing material o |
| 6784110 |
Method of etching shaped features on a substrate |
August 31, 2004 |
| In a method of etching a substrate, a substrate is provided in a process zone, the substrate having a pattern of features comprising dielectric covering semiconductor. In a first stage, an energized first etching gas is provided in the process zone, the energized first etching gas having |
| 6635573 |
Method of detecting an endpoint during etching of a material within a recess |
October 21, 2003 |
| We have discovered a method of detecting the approach of an endpoint during the etching of a material within a recess such as a trench or a contact via. The method provides a clear and distinct inflection endpoint signal, even for areas of a substrate containing isolated features. The me |
| 6599437 |
Method of etching organic antireflection coating (ARC) layers |
July 29, 2003 |
| A two-step method of etching an organic coating layer, in particular, an organic antireflection coating (ARC) layer, is disclosed. During the main etch step, the organic coating layer is etched using a plasma generated from a first source gas which includes a fluorocarbon and a non-c |
| 6566270 |
Integration of silicon etch and chamber cleaning processes |
May 20, 2003 |
| A method for processing a substrate disposed in a substrate process chamber having a source power includes transferring the substrate into the substrate process chamber. A trench is etched on the substrate by exposing the substrate to a plasma formed from a first etchant gas by applying |
| 6551941 |
Method of forming a notched silicon-containing gate structure |
April 22, 2003 |
| A method of forming a notch silicon-containing gate structure is disclosed. This method is particularly useful in forming a T-shaped silicon-containing gate structure. A silicon-containing gate layer is etched to a first desired depth using a plasma generated from a first source gas. |
| 6383941 |
Method of etching organic ARCs in patterns having variable spacings |
May 7, 2002 |
| The present disclosure relates to semiconductor processing, and to the plasma etching of organic layers, and in particular antireflective coating layers. We have discovered a particular combination of gases useful in producing chemically reactive plasma species, which provides unexpected |
