| Patent Number |
Title Of Patent |
Date Issued |
| 7620511 |
Method for determining plasma characteristics |
November 17, 2009 |
| Methods for determining characteristics of a plasma are provided. In one embodiment, a method for determining characteristics of a plasma includes obtaining metrics of current and voltage information for first and second waveforms coupled to a plasma at different frequencies, determining |
| 7585384 |
Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor |
September 8, 2009 |
| An apparatus configured to confine a plasma within a processing region in a plasma processing chamber. In one embodiment, the apparatus includes a ring that has a baffle having a plurality of slots and a plurality of fingers. Each slot is configured to have a width less than the thicknes |
| 7554334 |
Matching network characterization using variable impedance analysis |
June 30, 2009 |
| Embodiments of a method of calculating the equivalent series resistance of a matching network using variable impedance analysis and matching networks analyzed using the same are provided herein. In one embodiment, a method of calculating the equivalent series resistance of a matching |
| 7510665 |
Plasma generation and control using dual frequency RF signals |
March 31, 2009 |
| A method for controlling a plasma in a semiconductor substrate processing chamber is provided. The method includes the steps of supplying a first RF signal to a first electrode within the processing chamber at a first frequency selected to cause plasma sheath oscillation at the first |
| 7440859 |
Method for determining plasma characteristics |
October 21, 2008 |
| Methods for determining characteristics of a plasma are provided. In one embodiment, a method for determining characteristics of a plasma includes obtaining metrics of a plasma at two different frequencies, and determining at least one characteristic of the plasma utilizing the metri |
| 7431857 |
Plasma generation and control using a dual frequency RF source |
October 7, 2008 |
| A method and apparatus for generating and controlling a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method includes the steps of supplying a first RF signal from the source to an electrode within the processing chamber at a |
| 7375947 |
Method of feedback control of ESC voltage using wafer voltage measurement at the bias supply out |
May 20, 2008 |
| In a plasma reactor having an electrostatic chuck, wafer voltage is determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage is used to accurately control the DC wafer cla |
| 7359177 |
Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage m |
April 15, 2008 |
| A plasma reactor has a dual frequency plasma RF bias power supply furnishing RF bias power comprising first and second frequency components, f(1), f(2), respectively, and an RF power path having an input end coupled to the plasma RF bias power supply and an output end coupled to the |
| 7326872 |
Multi-frequency dynamic dummy load and method for testing plasma reactor multi-frequency impedan |
February 5, 2008 |
| In one implementation, a method is provided for testing a plasma reactor multi-frequency matching network comprised of multiple matching networks, each of the multiple matching networks having an associated RF power source and being tunable within a tunespace. The method includes pro |
| 7286948 |
Method for determining plasma characteristics |
October 23, 2007 |
| Methods for determining characteristics of a plasma are provided. In one embodiment, a method for determining characteristics of a plasma includes obtaining metrics of current and voltage information for first and second waveforms coupled to a plasma at different frequencies, determining |
| 6879870 |
Method and apparatus for routing harmonics in a plasma to ground within a plasma enhanced semico |
April 12, 2005 |
| A method and apparatus for routing harmonic energy within a plasma to ground in a plasma enhanced semiconductor wafer processing reactor. A model of the chamber is used to determine the pathway for RF power and the harmonic energy of that RF power through the chamber. From this model, th |
| 6652712 |
Inductive antenna for a plasma reactor producing reduced fluorine dissociation |
November 25, 2003 |
| An inductive antenna of a plasma reactor for processing a semiconductor wafer is connected to a radio frequency (RF) power source, and consists of a conductor arranged in successive loops that wind in opposing directions, adjacent pairs of the successive loops having facing portions in w |
