| Patent Number |
Title Of Patent |
Date Issued |
| 7605447 |
Highly manufacturable SRAM cells in substrates with hybrid crystal orientation |
October 20, 2009 |
| The present invention relates to a semiconductor device structure that includes at least one SRAM cell formed in a substrate. Such SRAM cell comprises two pull-up transistors, two pull-down transistors, and two pass-gate transistors. The pull-down transistors and the pass-gate transi |
| 7536664 |
Physical design system and method |
May 19, 2009 |
| A design system for designing complex integrated circuits (ICs), a method of IC design and program product therefor. A layout unit receives a circuit description representing portions in a grid and glyph format. A checking unit checks grid and glyph portions of the design. An elabora |
| 7269817 |
Lithographic process window optimization under complex constraints on edge placement |
September 11, 2007 |
| A method and system for layout optimization relative to lithographic process windows which facilitates lithographic constraints to be non-localized in order to impart a capability of printing a given circuit with a process window beyond the process windows which are attainable with c |
| 7079223 |
Fast model-based optical proximity correction |
July 18, 2006 |
| A method and system is provided for computing lithographic images that may take into account non-scalar effects such as lens birefringence, resist stack effects, tailored source polarizations, and blur effects of the mask and the resist. A generalized bilinear kernel is formed, which is |
| 6919146 |
Planar reticle design/fabrication method for rapid inspection and cleaning |
July 19, 2005 |
| A reticle has a transparent substrate, mask shapes on the substrate, a transparent material covering the mask shapes and an optional anti-reflective material over the transparent material. |
| 6842237 |
Phase shifted test pattern for monitoring focus and aberrations in optical projection systems |
January 11, 2005 |
| A method is described for determining lens aberrations using a test reticle and a standard metrology tool. The method provides test patterns, preferably in the form of standard overlay metrology test patterns, that include blazed gratings having orientation and pitch selected to sample |
