| Patent Number |
Title Of Patent |
Date Issued |
| 7202168 |
Method of producing semiconductor device |
April 10, 2007 |
| A method of producing a semiconductor device according to an aspect of the present invention comprises forming a seed film of Cu on a substrate; polycrystallizing the seed film formed on the substrate; and forming a plated film of Cu on the polycrystallized seed film by electrolytic |
| 7169697 |
Semiconductor device and manufacturing method of the same |
January 30, 2007 |
| Disclosed is a semiconductor device, comprising a first wiring structure formed on a semiconductor substrate and including a first plug and a first wiring formed on the first plug, and a second wiring structure formed on the semiconductor substrate belonging to the wiring layer equal |
| 6991878 |
Photomask repair method and apparatus |
January 31, 2006 |
| A photomask repair method including scanning an electron beam across a main surface of the photomask, thereby producing a pattern image of the photomask, identifying the position of a defective portion from the pattern image thus produced, and applying an electron beam to a region to |
| 6849923 |
Semiconductor device and manufacturing method of the same |
February 1, 2005 |
| Disclosed is a semiconductor device, comprising a first wiring structure formed on a semiconductor substrate and including a first plug and a first wiring formed on the first plug, and a second wiring structure formed on the semiconductor substrate belonging to the wiring layer equal to |
| 6831367 |
Semiconductor device and method of manufacturing the same |
December 14, 2004 |
| A semiconductor device comprises a semiconductor substrate having semiconductor elements integrally formed therein, a wiring layer formed on the surface of the semiconductor substrate, and a conductive connecting plug formed in a through-hole extending through the semiconductor subst |
| 6642149 |
Plasma processing method |
November 4, 2003 |
| In a processing chamber of an etching apparatus a lower electrode and an upper electrode grounded through a processing container are disposed oppositely to each other. A first high frequency power supply section composed of a first filter, a first matching device, and a first power s |
| 6605542 |
Manufacturing method of semiconductor devices by using dry etching technology |
August 12, 2003 |
| There is provided a method of forming an interlayer insulating film having a dual-damascene structure, a contact hole and a deep trench mask using an organic silicon film. The shape of polysilane or the like is processed so that polysilane is used as an interlayer insulating film having |
| 6352931 |
Manufacturing method of semiconductor devices by using dry etching technology |
March 5, 2002 |
| There is provided a method of forming an interlayer insulating film having a dual-damascene structure, a contact hole and a deep trench mask using an organic silicon film. The shape of polysilane or the like is processed so that polysilane is used as an interlayer insulating film having |
| 6334928 |
Semiconductor processing system and method of using the same |
January 1, 2002 |
| A semiconductor wafer etching system exhausts an exhaust gas including fluorocarbon gas to an exhaust line. Two traps, that are capable of trapping the fluorocarbon gas in the exhaust gas by cooled adsorption and releasing the adsorbed fluorocarbon gas by heating, are alternately arr |
| 5897713 |
Plasma generating apparatus |
April 27, 1999 |
| A plasma generating apparatus includes a container defining a hermetic process room. The container is connected to an exhaust for exhausting an interior of the process room and setting the interior of the process room to a vacuum, and a supply for supplying a process gas into the process |
| 5776557 |
Method for forming a film on a substrate by activating a reactive gas |
July 7, 1998 |
| A thin film forming method which comprises the steps of supporting a substrate to be treated, having a trench or an unevenness thereon, in a reaction vessel; introducing a reactive gas into the reaction vessel; activating the reactive gas to form a deposit species, the deposit species |
| 5717294 |
Plasma process apparatus |
February 10, 1998 |
| A vacuum chamber contains a first electrode for supporting a wafer, and a second electrode opposing the first electrode. A supply system and an exhaustion system are connected to the vacuum chamber. The system supplies a reactive gas into the chamber, and the system exhaust the used gas |
| 5660744 |
Plasma generating apparatus and surface processing apparatus |
August 26, 1997 |
| A surface processing apparatus comprises a container provided with a first electrode and a second electrode disposed opposite to the first electrode for supporting a substrate to be processed and filled with a gas at a reduced pressure, an electric field generator for generating an elect |
| 5591486 |
Method for forming a film on a substrate by activating a reactive gas |
January 7, 1997 |
| A thin film forming method which comprises the steps of supporting a substrate to be treated, having a trench or an unevenness thereon, in a reaction vessel; introducing a reactive gas into the reaction vessel; activating the reactive gas to form a deposit species, the deposit species |
| 5491339 |
Charged particle detection device and charged particle radiation apparatus |
February 13, 1996 |
| According to this invention, there is provided a charged particle detection device including a semiconductor substrate, an insulating film formed on the semiconductor substrate, an electrode formed on the insulating film, a member for forming a potential well, which is constituted by a d |
| 5444207 |
Plasma generating device and surface processing device and method for processing wafers in a uni |
August 22, 1995 |
| A surface processing device and method for forming a magnetic field having a uniform strength over a wide area of an electrode surface to generate a uniform high density plasma over the overall surface of a wafer. The device comprises a vacuum container contains a first electrode and a |
| 5385763 |
Method for forming a film on a substrate by activating a reactive gas |
January 31, 1995 |
| A thin film forming method comprises the steps of supporting a semiconductor substrate having a trench or an unevenness thereon in a reaction vessel; introducing a reactive gas into the vessel; activating the reactive gas to form a deposit species, the deposit species characterized b |
| 5221450 |
Electrostatic chucking method |
June 22, 1993 |
| Disclosed is an electrostatic chucking method, comprising the steps of: (a) placing a substrate to be chucked electrostatically on a chucking material containing an electrode; (b) chucking the substrate to the chucking material by supplying a predetermined electrical potential to the |
| 5156881 |
Method for forming a film on a substrate by activating a reactive gas |
October 20, 1992 |
| A thin film forming method includes the steps of supporting a semiconductor substrate having a trench or unevenness thereon in a reaction vessel, introducing a reactive gas into the reaction vessel, activating the reactive gas to form a deposit species, exhausting the interior of the |
| 5112645 |
Phototreating method and apparatus therefor |
May 12, 1992 |
| A phototreating method comprises the steps of introducing a photoreactive gas into a chamber housing a workpiece, emitting first light substantially perpendicularly to a surface of the workpiece, and emitting second light substantially perpendicularly to the surface of the workpiece |
| 4844774 |
Phototreating method and apparatus therefor |
July 4, 1989 |
| A phototreating method comprises the steps of introducing a photoreactive gas into a chamber housing a workpiece, emitting first light substantially perpendicularly to a surface of the workpiece, and emitting second light substantially perpendicularly to the surface of the workpiece |
| 4838978 |
Dry etching apparatus |
June 13, 1989 |
| A dry etching apparatus which includes an anode located at an upper side and a cathode located at a lower side which face each other in a vacuum vessel. A high-frequency power can be applied across the anode and the cathode. A flange section extends from the inner wall of the vacuum |
| 4786361 |
Dry etching process |
November 22, 1988 |
| A process is disclosed which etches a workpiece, with an etching mask of a predetermined pattern formed on the surface of the workpiece, on an apparatus which includes a container for holding first and second electrodes opposite to each other and a magnetic field generator arranged o |
| 4668337 |
Dry-etching method and apparatus therefor |
May 26, 1987 |
| A dry-etching method for performing anisotropic etching on a semiconductor substrate by employing an etching gas together with a film-forming gas while irradiating light or an X-ray on the semiconductor substrate. In this method at least one of the etching gas or film-forming gas is exci |
| 4642171 |
Phototreating apparatus |
February 10, 1987 |
| A phototreating apparatus has a vacuum container for storing a solid material, a gas inlet for introducing a photoreactive gas into the container, and a light source for radiating into the container, light having a specific wavelength such that it causes a photoreaction of the photor |
| 4595601 |
Method of selectively forming an insulation layer |
June 17, 1986 |
| An insulation layer is selectively formed by exposing the surface of a workpiece to an atmosphere comprising a mixture of a halogen-based gas and a raw gas containing a compoundable element chemically bondable with an element of a material constituting surface layer of the workpiece to f |
| 4529475 |
Dry etching apparatus and method using reactive gases |
July 16, 1985 |
| A dry etching apparatus is disclosed which uses reactive gases and which is capable of achieving anisotropic etching without causing radiation damage to a workpiece to be selectively etched. The workpiece is placed in a vacuum container into which two feedstock gases are introduced. One |
