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Scrudato; Carmelo F.
Ossining, NY
No. of patents:

Patent Number Title Of Patent Date Issued
7867910 Method of accessing semiconductor circuits from the backside using ion-beam and gas-etch January 11, 2011
The invention generally relates to semiconductor device processing, and more particularly to methods of accessing semiconductor circuits from the backside using ion-beam and gas-etch to mill deep vias through full-thickness silicon. A method includes creating a pocket in a material t
7205237 Apparatus and method for selected site backside unlayering of si, GaAs, Ga.sub.xAl.sub.yAs.sub.z April 17, 2007
Apparatus for exposure and probing of features in a semiconductor workpiece includes a hollow concentrator for covering a portion of the workpiece connected by a gas conduit to a supply of etchant gas. A stage supports and positions the semiconductor workpiece. Control means moves th
6900137 Dry etch process to edit copper lines May 31, 2005
The present invention is directed to methods for editing copper features embedded within an organic body by exposing at least a portion of a top surface of the copper feature, forming a mill box there-over and then simultaneously milling both the copper feature and any organic material

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