| Patent Number |
Title Of Patent |
Date Issued |
| 6992338 |
CMOS transistor spacers formed in a BiCMOS process |
January 31, 2006 |
| According to an exemplary method in one embodiment, a transistor gate is fabricated on a substrate. Next, an etch stop layer may be deposited on the substrate. The etch stop layer may, for example, be TEOS silicon dioxide. Thereafter, a conformal layer is deposited over the substrate |
| 6972442 |
Efficiently fabricated bipolar transistor |
December 6, 2005 |
| One embodiment is a method for fabricating the base of a bipolar transistor where the method comprises placing a first wafer in an undoped epi chamber. Next a first undoped base layer is grown over the first wafer. After growing the first undoped base layer, the first wafer is transferre |
| 6830967 |
Method for forming CMOS transistor spacers in a BiCMOS process |
December 14, 2004 |
| According to an exemplary method in one embodiment, a transistor gate is fabricated on a substrate. Next, an etch stop layer may be deposited on the substrate. The etch stop layer may, for example, be TEOS silicon dioxide. Thereafter, a conformal layer is deposited over the substrate and |
| 6830625 |
System for fabricating a bipolar transistor |
December 14, 2004 |
| One embodiment is a method for fabricating the base of a bipolar transistor where the method comprises placing a first wafer in an undoped epi chamber. Next a first undoped base layer is grown over the first wafer. After growing the first undoped base layer, the first wafer is transferre |
| 6812107 |
Method for improved alignment tolerance in a bipolar transistor |
November 2, 2004 |
| According to one exemplary embodiment, a method for fabricating a bipolar transistor, such as a heterojunction bipolar transistor ("HBT"), comprises fabricating a first inner spacer and a second inner spacer on a top surface of a base. The method further comprises forming a first outer |
| 6683366 |
Bipolar transistor and related structure |
January 27, 2004 |
| According to one exemplary embodiment, a bipolar transistor, such as a heterojunction bipolar transistor ("HBT"), comprises a base having a top surface. The HBT further comprises a first inner spacer and a second inner spacer situated on the top surface of the base. The HBT further compr |
| 6589850 |
Method and system for fabricating a bipolar transistor and related structure |
July 8, 2003 |
| One embodiment is a method for fabricating the base of a bipolar transistor where the method comprises placing a first wafer in an undoped epi chamber. Next a first undoped base layer is grown over the first wafer. After growing the first undoped base layer, the first wafer is transferre |
