Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Schuegraf; Klaus F.
Address:
San Jose, CA
No. of patents:
7
Patents:












Patent Number Title Of Patent Date Issued
6992338 CMOS transistor spacers formed in a BiCMOS process January 31, 2006
According to an exemplary method in one embodiment, a transistor gate is fabricated on a substrate. Next, an etch stop layer may be deposited on the substrate. The etch stop layer may, for example, be TEOS silicon dioxide. Thereafter, a conformal layer is deposited over the substrate
6972442 Efficiently fabricated bipolar transistor December 6, 2005
One embodiment is a method for fabricating the base of a bipolar transistor where the method comprises placing a first wafer in an undoped epi chamber. Next a first undoped base layer is grown over the first wafer. After growing the first undoped base layer, the first wafer is transferre
6830967 Method for forming CMOS transistor spacers in a BiCMOS process December 14, 2004
According to an exemplary method in one embodiment, a transistor gate is fabricated on a substrate. Next, an etch stop layer may be deposited on the substrate. The etch stop layer may, for example, be TEOS silicon dioxide. Thereafter, a conformal layer is deposited over the substrate and
6830625 System for fabricating a bipolar transistor December 14, 2004
One embodiment is a method for fabricating the base of a bipolar transistor where the method comprises placing a first wafer in an undoped epi chamber. Next a first undoped base layer is grown over the first wafer. After growing the first undoped base layer, the first wafer is transferre
6812107 Method for improved alignment tolerance in a bipolar transistor November 2, 2004
According to one exemplary embodiment, a method for fabricating a bipolar transistor, such as a heterojunction bipolar transistor ("HBT"), comprises fabricating a first inner spacer and a second inner spacer on a top surface of a base. The method further comprises forming a first outer
6683366 Bipolar transistor and related structure January 27, 2004
According to one exemplary embodiment, a bipolar transistor, such as a heterojunction bipolar transistor ("HBT"), comprises a base having a top surface. The HBT further comprises a first inner spacer and a second inner spacer situated on the top surface of the base. The HBT further compr
6589850 Method and system for fabricating a bipolar transistor and related structure July 8, 2003
One embodiment is a method for fabricating the base of a bipolar transistor where the method comprises placing a first wafer in an undoped epi chamber. Next a first undoped base layer is grown over the first wafer. After growing the first undoped base layer, the first wafer is transferre










 
 
  Recently Added Patents
Playback device for stereoscopic viewing, integrated circuit, and program
Image surveillance system and method of detecting whether object is left behind or taken away
Generating and modifying textual code interfaces from graphical programs
Semiconductor device, method of manufacturing semiconductor device, and electronic apparatus
Toner for developing electrostatic charge image, electrostatic charge image developer, toner cartridge, process cartridge, image forming method, and image forming apparatus
Dual source mass spectrometry system
Node and wireless sensor network comprising the node
  Randomly Featured Patents
Hollow cathode plasma plume
Endoscope relay lens
Method for introducing hydrogen into layered nanostructures
Semiconductor integrated circuit device incorporating fuse-programmable pass/fail identification circuit and pass/fail determination method thereof
Imines of aminodiphenyl esthers as antioxidants and lubricating oils and greases containing same
Regulator protector
Multilayer high vertical aspect ratio thin film structures
Process and assembly for sealing an opening of a press
Laser beam tertiary positioner apparatus and method
Redundant pressurizing valve