Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Schuegraf; Klaus F.
Address:
San Jose, CA
No. of patents:
7
Patents:












Patent Number Title Of Patent Date Issued
6992338 CMOS transistor spacers formed in a BiCMOS process January 31, 2006
According to an exemplary method in one embodiment, a transistor gate is fabricated on a substrate. Next, an etch stop layer may be deposited on the substrate. The etch stop layer may, for example, be TEOS silicon dioxide. Thereafter, a conformal layer is deposited over the substrate
6972442 Efficiently fabricated bipolar transistor December 6, 2005
One embodiment is a method for fabricating the base of a bipolar transistor where the method comprises placing a first wafer in an undoped epi chamber. Next a first undoped base layer is grown over the first wafer. After growing the first undoped base layer, the first wafer is transferre
6830967 Method for forming CMOS transistor spacers in a BiCMOS process December 14, 2004
According to an exemplary method in one embodiment, a transistor gate is fabricated on a substrate. Next, an etch stop layer may be deposited on the substrate. The etch stop layer may, for example, be TEOS silicon dioxide. Thereafter, a conformal layer is deposited over the substrate and
6830625 System for fabricating a bipolar transistor December 14, 2004
One embodiment is a method for fabricating the base of a bipolar transistor where the method comprises placing a first wafer in an undoped epi chamber. Next a first undoped base layer is grown over the first wafer. After growing the first undoped base layer, the first wafer is transferre
6812107 Method for improved alignment tolerance in a bipolar transistor November 2, 2004
According to one exemplary embodiment, a method for fabricating a bipolar transistor, such as a heterojunction bipolar transistor ("HBT"), comprises fabricating a first inner spacer and a second inner spacer on a top surface of a base. The method further comprises forming a first outer
6683366 Bipolar transistor and related structure January 27, 2004
According to one exemplary embodiment, a bipolar transistor, such as a heterojunction bipolar transistor ("HBT"), comprises a base having a top surface. The HBT further comprises a first inner spacer and a second inner spacer situated on the top surface of the base. The HBT further compr
6589850 Method and system for fabricating a bipolar transistor and related structure July 8, 2003
One embodiment is a method for fabricating the base of a bipolar transistor where the method comprises placing a first wafer in an undoped epi chamber. Next a first undoped base layer is grown over the first wafer. After growing the first undoped base layer, the first wafer is transferre










 
 
  Recently Added Patents
High-performance AHCI interface
Personal IP toll-free number
Method and system for calibrating laser profiling systems
Varying latency timers in a wireless communication system
Subscribing to content
Apparatus and method for discharging capacitor of input filter of power supply, and power supply including the apparatus
Systems and method for automatic color plane misregistration calibration
  Randomly Featured Patents
Flush valve
Electronic parts built-in substrate and method of manufacturing the same
Ligands of nuclear receptor
Use of cupric complex of 3,5-disopropylsalicylic acid by way of a cosmetic product and cosmetic compositions containing this compound for protecting the human epidermis against UV radiation
High-pressure pump, in particular for a fuel injection system of an internal combustion engine
Method and apparatus for managing transmission of TCP data segments
Method for the surveyance of an object space
Radio and/or telephone communication system for a fleet of vehicles
Liquid leak detector
Protected rearview mirror assembly