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Inventor:
Schuegraf; Klaus F.
Address:
San Jose, CA
No. of patents:
7
Patents:












Patent Number Title Of Patent Date Issued
6992338 CMOS transistor spacers formed in a BiCMOS process January 31, 2006
According to an exemplary method in one embodiment, a transistor gate is fabricated on a substrate. Next, an etch stop layer may be deposited on the substrate. The etch stop layer may, for example, be TEOS silicon dioxide. Thereafter, a conformal layer is deposited over the substrate
6972442 Efficiently fabricated bipolar transistor December 6, 2005
One embodiment is a method for fabricating the base of a bipolar transistor where the method comprises placing a first wafer in an undoped epi chamber. Next a first undoped base layer is grown over the first wafer. After growing the first undoped base layer, the first wafer is transferre
6830967 Method for forming CMOS transistor spacers in a BiCMOS process December 14, 2004
According to an exemplary method in one embodiment, a transistor gate is fabricated on a substrate. Next, an etch stop layer may be deposited on the substrate. The etch stop layer may, for example, be TEOS silicon dioxide. Thereafter, a conformal layer is deposited over the substrate and
6830625 System for fabricating a bipolar transistor December 14, 2004
One embodiment is a method for fabricating the base of a bipolar transistor where the method comprises placing a first wafer in an undoped epi chamber. Next a first undoped base layer is grown over the first wafer. After growing the first undoped base layer, the first wafer is transferre
6812107 Method for improved alignment tolerance in a bipolar transistor November 2, 2004
According to one exemplary embodiment, a method for fabricating a bipolar transistor, such as a heterojunction bipolar transistor ("HBT"), comprises fabricating a first inner spacer and a second inner spacer on a top surface of a base. The method further comprises forming a first outer
6683366 Bipolar transistor and related structure January 27, 2004
According to one exemplary embodiment, a bipolar transistor, such as a heterojunction bipolar transistor ("HBT"), comprises a base having a top surface. The HBT further comprises a first inner spacer and a second inner spacer situated on the top surface of the base. The HBT further compr
6589850 Method and system for fabricating a bipolar transistor and related structure July 8, 2003
One embodiment is a method for fabricating the base of a bipolar transistor where the method comprises placing a first wafer in an undoped epi chamber. Next a first undoped base layer is grown over the first wafer. After growing the first undoped base layer, the first wafer is transferre










 
 
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