Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Schuegraf; Klaus F.
Address:
San Jose, CA
No. of patents:
7
Patents:












Patent Number Title Of Patent Date Issued
6992338 CMOS transistor spacers formed in a BiCMOS process January 31, 2006
According to an exemplary method in one embodiment, a transistor gate is fabricated on a substrate. Next, an etch stop layer may be deposited on the substrate. The etch stop layer may, for example, be TEOS silicon dioxide. Thereafter, a conformal layer is deposited over the substrate
6972442 Efficiently fabricated bipolar transistor December 6, 2005
One embodiment is a method for fabricating the base of a bipolar transistor where the method comprises placing a first wafer in an undoped epi chamber. Next a first undoped base layer is grown over the first wafer. After growing the first undoped base layer, the first wafer is transferre
6830967 Method for forming CMOS transistor spacers in a BiCMOS process December 14, 2004
According to an exemplary method in one embodiment, a transistor gate is fabricated on a substrate. Next, an etch stop layer may be deposited on the substrate. The etch stop layer may, for example, be TEOS silicon dioxide. Thereafter, a conformal layer is deposited over the substrate and
6830625 System for fabricating a bipolar transistor December 14, 2004
One embodiment is a method for fabricating the base of a bipolar transistor where the method comprises placing a first wafer in an undoped epi chamber. Next a first undoped base layer is grown over the first wafer. After growing the first undoped base layer, the first wafer is transferre
6812107 Method for improved alignment tolerance in a bipolar transistor November 2, 2004
According to one exemplary embodiment, a method for fabricating a bipolar transistor, such as a heterojunction bipolar transistor ("HBT"), comprises fabricating a first inner spacer and a second inner spacer on a top surface of a base. The method further comprises forming a first outer
6683366 Bipolar transistor and related structure January 27, 2004
According to one exemplary embodiment, a bipolar transistor, such as a heterojunction bipolar transistor ("HBT"), comprises a base having a top surface. The HBT further comprises a first inner spacer and a second inner spacer situated on the top surface of the base. The HBT further compr
6589850 Method and system for fabricating a bipolar transistor and related structure July 8, 2003
One embodiment is a method for fabricating the base of a bipolar transistor where the method comprises placing a first wafer in an undoped epi chamber. Next a first undoped base layer is grown over the first wafer. After growing the first undoped base layer, the first wafer is transferre










 
 
  Recently Added Patents
Inhibitors of bacterial tyrosine kinase and uses thereof
Electrophotographic photoreceptor, image-forming apparatus, and electrophotographic cartridge
System and transceiver clocking to minimize required number of reference sources in multi-function cellular applications including GPS
Semiconductor device
System and method of interfacing co-processors and input/output devices via a main memory system
(4936
Satellite communication network
  Randomly Featured Patents
Process for making complementary transistors by sequential implantations using oxidation barrier masking layer
Automatic nodule measurements
Silver/metal oxide material for electrical contacts and method of producing the same
Vibrating beam accelerometer with velocity change output
Apparatus for spray shower maintenance
Vibration control system
Pen tracking and low latency display updates on electronic paper displays
Electronic device flap folio
Storm water runoff treatment system
Reduction of the travel noise of tires