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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Schruefer; Klaus
Address:
Baldham, DE
No. of patents:
8
Patents:












Patent Number Title Of Patent Date Issued
8183120 Method of making bipolar FinFET technology May 22, 2012
One or more embodiments relate to a method, comprising forming an implant on a substrate surface; selectively etching the wafer surface to form an elongated fin including portion of the implant; forming collector/emitter regions adjacent opposing ends of the fin; and forming a base regio
8106424 Field effect transistor with a heterostructure January 31, 2012
A field effect transistor with a heterostructure includes a strained monocrystalline semiconductor layer formed on a carrier material, which has a relaxed monocrystalline semiconductor layer made of a first semiconductor material (Si) as the topmost layer. The strained monocrystallin
8067808 Apparatus of memory array using FinFETs November 29, 2011
A memory cell includes a FinFET select device and a memory element. In some embodiments a memory cell has a contact element coupled between a surface of the fin and the memory element.
8039904 Apparatus of memory array using finfets October 18, 2011
A memory cell includes a FinFET select device and a memory element. In some embodiments a memory cell has a contact element coupled between a surface of the fin and the memory element.
7888775 Vertical diode using silicon formed by selective epitaxial growth February 15, 2011
Some embodiments relate to an apparatus that exhibits vertical diode activity to occur between a semiconductive body and an epitaxial film that is disposed over a doping region of the semiconductive body. Some embodiments include an apparatus that causes both vertical and lateral dio
7824993 Field-effect transistor with local source/drain insulation and associated method of production November 2, 2010
A method for fabricating a field-effect transistor with local source/drain insulation. The method includes forming and patterning a gate stack with a gate layer and a gate dielectric on a semiconductor substrate; forming source and drain depressions at the gate stack in the semiconductor
7804110 Field effect transistor with a heterostructure September 28, 2010
A field effect transistor with a heterostructure includes a strained monocrystalline semiconductor layer formed on a carrier material, which has a relaxed monocrystalline semiconductor layer made of a first semiconductor material (Si) as the topmost layer. The strained monocrystallin
7491612 Field effect transistor with a heterostructure and associated production method February 17, 2009
A field effect transistor with a heterostructure includes a strained monocrystalline semiconductor layer formed on a carrier material, which has a relaxed monocrystalline semiconductor layer made of a first semiconductor material (Si) as the topmost layer. The strained monocrystallin










 
 
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