Resources Contact Us Home
Sawada; Minoru
Hirakata, JP
No. of patents:

Patent Number Title Of Patent Date Issued
5650642 Field effect semiconductor device July 22, 1997
A field effect semiconductor device comprises a first channel layer composed of an undoped semiconductor in which electrons mainly drift in low-noise operation and a second channel layer composed of a semiconductor of one conductivity type in which electrons mainly drift in high-power
5258632 Velocity modulation transistor November 2, 1993
A velocity modulation transistor has a first barrier layer, first channel layer, second barrier layer, second channel layer, third barrier layer, input/output electrode that and control electrode are laminated on a semi-insulative substrate in this order, The electron affinity of the
5225895 Velocity-modulation transistor with quantum well wire layer July 6, 1993
An electron supply layer, a quantum well layer, a first barrier layer, a quantum well layer and a second barrier layer are formed in that order on a GaAs substrate to obtain a device, and source, drain and gate electrodes are provided on the surface of this device. In the above described

  Recently Added Patents
System and method for organizing, processing and presenting information
Sequential control device for a striking mechanism
All-angle light emitting element having high heat dissipating efficiency
Secure Flash-based memory system with fast wipe feature
Water slide
Configurable caged ball insert for a downhole tool
Corner wrap for use with a pallet
  Randomly Featured Patents
Ion trap mass spectroscopy
Adjustable pendent sprinkler assembly
Absorbent article product line
Developing device
Silicone-containing polyvinyl acetals
Synchronous frequency-shift mechanism in fizeau interferometer
Inconstant-thickness workpiece feeding apparatus
Sulphamoylthiophenes, a process for their preparation
Composition for inhibiting scale in water systems
Portable printer for handheld computer