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Sawada; Minoru
Hirakata, JP
No. of patents:

Patent Number Title Of Patent Date Issued
5650642 Field effect semiconductor device July 22, 1997
A field effect semiconductor device comprises a first channel layer composed of an undoped semiconductor in which electrons mainly drift in low-noise operation and a second channel layer composed of a semiconductor of one conductivity type in which electrons mainly drift in high-power
5258632 Velocity modulation transistor November 2, 1993
A velocity modulation transistor has a first barrier layer, first channel layer, second barrier layer, second channel layer, third barrier layer, input/output electrode that and control electrode are laminated on a semi-insulative substrate in this order, The electron affinity of the
5225895 Velocity-modulation transistor with quantum well wire layer July 6, 1993
An electron supply layer, a quantum well layer, a first barrier layer, a quantum well layer and a second barrier layer are formed in that order on a GaAs substrate to obtain a device, and source, drain and gate electrodes are provided on the surface of this device. In the above described

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