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Inventor:
Sato; Toshiyuki
Address:
Kyoto, JP
No. of patents:
10
Patents:




Patent Number Title Of Patent Date Issued
7554092 X-ray detector June 30, 2009
An X-ray detector for detecting X rays includes a semiconductor for generating electric charges therein upon X-ray incidence, and electrodes formed on opposite sides of the semiconductor for application of a predetermined bias voltage. The semiconductor is amorphous selenium (a-Se) d
7498189 Method of producing a radiation detector with a polysilicon converting layer March 3, 2009
In a method of producing a radiation detector, an active matrix board is formed to include gate lines and data lines arranged in a two-dimensional lattice shape, a plurality of high-speed switching elements provided to respective lattice points and connected to the gate lines and the dat
7034312 Radiation detector April 25, 2006
A radiation detector for detecting a spatial distribution of incident radiation includes a radiation-sensitive semiconductor, a common electrode formed on one surface of the semiconductor for receiving a bias voltage, a plurality of split electrodes formed on the other surface of the
6995375 Split-electrode radiation detector free of sensibility variations and after-outputs February 7, 2006
A radiation detector for detecting a spatial distribution of incident radiation includes a radiation-sensitive semiconductor, a common electrode formed on one surface of the semiconductor for receiving a bias voltage, a plurality of split electrodes formed on the other surface of the
6512233 Radiation detector and radiation image taking device January 28, 2003
In a radiation detector, a polycrystalline film is formed by a closed spaced sublimation using a sintered material of at least one of a CdTe and CdZnTe powder. The CdTe or CdZnTe film has a thickness sufficient to catch radiation and a large area corresponding to a size of a supporting b
6407374 Two-dimensional array type detecting device having a common and individual electrodes June 18, 2002
A two-dimensional array type detecting device of the invention is formed of a detecting side substrate, and a readout side substrate laminated together. In the detecting side substrate, a high resistivity responsive semiconductor film is laminated on a substrate through a common electrod
6344370 Method for fabricating detection element and method for fabricating two-dimensional image detect February 5, 2002
In a method of the present invention for fabricating a two-dimensional image detector in which a light/radiations detection element is applied, an upper electrode, a first charge blocking layer, and a semiconductor layer having photoconductivity are provided on support substrate in the
6342700 Two-dimensional image detector January 29, 2002
An active matrix substrate provided with a matrix of electrode wires, a plurality of thin film transistors (TFTs) individually formed at intersections of the matrix, and pixel electrodes connected to the electrode wires through the thin film transistors (TFTs) is laminated to a count
6262408 Two-dimensional image detector and process for manufacturing the same July 17, 2001
A two-dimensional image detector of the present invention includes: an active matrix substrate equipped with charge storage capacitors and TFTs; and an opposing substrate equipped with a semiconductor substrate. The two-dimensional image detector is formed by adhering the active matrix
5248885 Radiation detector having means for exciting trapped carriers September 28, 1993
In a radiation detector for detecting a high dose radiation, a radiation detecting element is heated or infrared rays are emitted into the radiation detecting element. Carriers trapped by defects or the like in the radiation detecting element are thereby excited to compensate for out


 
 
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