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Inventor:
Sato; Naoyuki
Address:
Kanagawa, JP
No. of patents:
1
Patents:












Patent Number Title Of Patent Date Issued
7858517 Method of manufacturing semiconductor device, and semiconductor device December 28, 2010
First, in a first step, a gate electrode is formed over a silicon substrate, with a gate insulation film therebetween. Next, in a second step, etching with the gate electrode as a mask is conducted so as to dig down a surface layer of the silicon substrate. Subsequently, in a third s










 
 
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