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Inventor: Sato; Naoyuki
Address: Kanagawa, JP
No. of patents: 1
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 7858517 |
Method of manufacturing semiconductor device, and semiconductor device |
December 28, 2010 |
| First, in a first step, a gate electrode is formed over a silicon substrate, with a gate insulation film therebetween. Next, in a second step, etching with the gate electrode as a mask is conducted so as to dig down a surface layer of the silicon substrate. Subsequently, in a third s |
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