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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Sasaki; Makoto
Address:
Sendai, JP
No. of patents:
8
Patents:












Patent Number Title Of Patent Date Issued
7804174 TFT wiring comprising copper layer coated by metal and metal oxide September 28, 2010
A gate electrode (wiring) (40) having a Cu layer (40a) surrounded by a coating film (40b) made of titanium or titanium oxide; a TFT substrate (31) comprising the gate electrode (wiring) (40) and a LCD comprising a pair of opposing substrates and a liquid crystal disposed between the
6956236 Wiring, TFT substrate using the same and LCD October 18, 2005
A gate electrode (wiring) (40) having a Cu layer (40a) surrounded by a coating film (40b) made of titanium or titanium oxide; a TFT substrate (31) comprising the gate electrode (wiring) (40) and a LCD comprising a pair of opposing substrates and a liquid crystal disposed between the
5605576 High frequency magnetron plasma apparatus February 25, 1997
An object of the present invention is to increase the energy efficiency of a plasma apparatus and provide a high-frequency magnetron plasma apparatus which can precisely control plasma. The plasma apparatus has a susceptor electrode, a plasma exciting electrode, magnets mounted on the pl
5573958 Method of fabricating a thin film transistor wherein the gate terminal is formed after the gate November 12, 1996
A method of fabricating a thin film transistor of an inverted stagger structure having a gate terminal, a gate insulator a semiconductor film, a source electrode and a drain electrode formed in that order; a gate terminal and a gate wiring are provided for supplying a scanning signal to
5570031 Substrate surface potential measuring apparatus and plasma equipment October 29, 1996
There is provided a surface potential measuring apparatus cable of accurately measuring the potential of a substrate regardless of the material of the substrate, and a plasma equipment capable of accurately measuring and controlling ion energy. The substrate surface potential measuri
5164221 Forming die manufacturing method November 17, 1992
A manufacturing method of a forming die includes the steps of depositing a film of aluminum nitride or aluminum oxynitride on the forming surface of a forming member by passing an electric discharge through a mixture gas of halide of aluminum and a gas containing nitrogen atoms and hydro
5093156 Process for preparing carbon material March 3, 1992
A carbon material having oxidation resistance is prepared by forming a fi coating constituted mainly by carbon on the surface of a carbon/carbon composite by chemical vapor deposition, then forming on said first coating a second coating of a ceramic or both a ceramic and carbon by chemi
5093150 Synthesis method by plasma chemical vapor deposition March 3, 1992
A method of synthesizing metal-containing material by a plasma chemical vapor deposition comprises converting a reactive gas containing metal atoms into plasmas in a reaction chamber and supplying an inert gas from outside the plasma region in the reaction chamber. Ceramic films of e










 
 
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