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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Sasai; Yoichi
Address:
Hirakata, JP
No. of patents:
9
Patents:












Patent Number Title Of Patent Date Issued
5822347 Semiconductor light emitting device and method for fabricating the same October 13, 1998
In a II-VI group semiconductor laser, on an n type GaAs substrate, an n type ZnSe layer, a multiquantum well layer of a ZnCdSe well layer and a ZnSe barrier layer, and a p type ZnSe layer are deposited in this order. A polycrystalline ZnO layer is provided on both sides of the p type ZnS
5705831 Semiconductor light-emitting device and production method thereof, and crystal-growing method su January 6, 1998
According to one aspect of the invention, a crystal-growing method for forming a II-VI single crystalline semiconductor expressed by Zn.sub.1-x Cd.sub.x Se (where 0<x<0.35) is provided. The crystal-growing method includes a step of epitaxially growing the II-VI single crystalline
5619520 Semiconductor laser April 8, 1997
A semiconductor laser of this invention includes: a semiconductor substrate; a first cladding layer made of first conductivity type ZnMgSSe, which is held by the semiconductor substrate and lattice-matches with the semiconductor substrate; a stripe-shaped second cladding layer made of
5323262 Wavelength conversion device June 21, 1994
A wavelength conversion device exhibiting an excellent wavelength conversion efficiency is provided by forming it in such a manner that an LiTaO.sub.3 substrate is subjected to a proton exchange treatment to form a proton-exchange layer before the proton-exchange layer is subjected to
5221310 Method of manufacturing wavelength conversion device June 22, 1993
A wavelength conversion device exhibiting an excellent wavelength conversion efficiency is provided by forming it in such a manner that an LiTaO.sub.3 substrate is subjected to a proton exchange treatment to form a proton-exchange layer before the proton-exchange layer is subjected to
5150376 Laser source September 22, 1992
A laser source with small output fluctuations due to variations in ambient temperature. The frequency doubler, which has an optical waveguide formed on the substrate of its nonlinear optical crystal, and the laser generator are fixed on the same optical axis within the lens barrel. Moreo
4956682 Optoelectronic integrated circuit September 11, 1990
An optoelectronic integrated circuit includes an N.sup.+ type cladding layer, an N type cladding layer, an active layer smaller in band gap than the N type cladding layer and a P type waveguide greater in band gap than the active layer sequentially formed on a semi-insulating substrate,
4779283 Semiconductor light emitting device October 18, 1988
A semiconductor laser in which an InGaAsP active layer serving as light emitting layer and formed in the shape of a stripe on the surface of a flat InP first clad layer, and an InP second clad layer that is wider than the InGaAsP active layer and formed on the InGaAsP active layer are bu
4702781 Liquid phase epitaxial growth method October 27, 1987
Disclosed is a liquid phase epitaxial growth method using a slider having a recess which receives a semiconductor substrate, and a growth boat having a solution holder which holds plural kinds of solutions for use in epitaxial growth, in which method, epitaxial growth of a layer having










 
 
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