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Inventor: Sakurai; Keiji
Address: Nagano, JP
No. of patents: 1
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 5371400 |
Semiconductor diode structure |
December 6, 1994 |
| Desirably, a Schottky barrier semiconductor diode has low forward direction rising voltage and high inverse direction yield voltage. A semiconductor device is provided with a first metal producing a low Schottky barrier and a second metal producing a high Schottky barrier. The forward di |
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