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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Sakai; Masanori
Address:
Takaoka, JP
No. of patents:
7
Patents:












Patent Number Title Of Patent Date Issued
8227346 Method of producing semiconductor device July 24, 2012
Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second s
8003547 Method of manufacturing semiconductor device August 23, 2011
A substrate processing apparatus, a method of manufacturing a semiconductor device, and a method of confirming an operation of a liquid flowrate control device are provided. The substrate processing apparatus comprises: a process chamber accommodating a substrate; a liquid source sup
7950348 Substrate processing apparatus and semiconductor device producing method May 31, 2011
A substrate processing apparatus is provided with a reaction chamber (201), a substrate rotating mechanism (267) for rotating a wafer (200), and a gas supplying part for supplying the wafer (200) with gas. At least two types of gases A and B are alternately supplied a plurality of times,
7892983 Substrate processing apparatus and producing method of semiconductor device February 22, 2011
Disclosed is a substrate processing apparatus, comprising a processing chamber, a holder to hold at least a plurality of product substrates, a heating member, a supplying member to alternately supply at least a first reactant and a second reactant, and a control unit, wherein the control
7779785 Production method for semiconductor device and substrate processing apparatus August 24, 2010
Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second s
7713582 Substrate processing method for film formation May 11, 2010
A film-forming method that includes providing a substrate to be film-formed in a reaction chamber of an apparatus that includes: the reaction chamber; a first gas supply pipe in fluid communication with the reaction chamber for carrying a first processing gas to the reaction chamber;
7662727 Method for manufacturing semiconductor device background February 16, 2010
To improve a step coverage and a loading effect, without inviting a deterioration of throughput and an increase of cost, in a method for forming a thin film by alternately flowing a raw material and alcohol to a processing chamber. The method includes: loading a silicon wafer having










 
 
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