| Patent Number |
Title Of Patent |
Date Issued |
| 4795688 |
Layered photoconductive member comprising amorphous silicon |
January 3, 1989 |
| A photoconductive member comprises a support for a photoconductive member and an amorphous layer having photoconductivity and containing an amorphous material comprising silicon atom as a matrix, said amorphous layer having a first layer region containing oxygen atoms and a second la |
| 4637972 |
Light receiving member having an amorphous silicon photoconductor |
January 20, 1987 |
| A light-receiving member has a substrate and a light receiving layer having photoconductivity containing an amorphous material comprising a matrix of silicon atoms provided on said substrate, said light receiving layer having, from the said support side with respect to the layer thicknes |
| 4636450 |
Photoconductive member having amorphous silicon matrix with oxygen and impurity containing regio |
January 13, 1987 |
| A photoconductive member comprises a support for a photoconductive member and an amorphous layer exhibiting photoconductivity and comprising an amorphous material comprising silicon atoms as a matrix and at least one member selected from the group consisting of hydrogen atoms and halogen |
| 4617246 |
Photoconductive member of a Ge-Si layer and Si layer |
October 14, 1986 |
| A photoconductive member, which comprises a support for photoconductive member and a light receiving layer having a layer constitution comprising a first layer region comprising an amorphous material containing Ge.sub.x Si.sub.1-x (0.95<x.ltoreq.1) and a second layer region comprising |
| 4592985 |
Photoconductive member having amorphous silicon layers |
June 3, 1986 |
| A photoconductive member, is provided which has a support, a first layer having photoconductivity containing an amorphous material comprising silicon atoms as a matrix provided on said support and a second layer containing silicon atoms and carbon atoms as essential components provided |
| 4569894 |
Photoconductive member comprising germanium atoms |
February 11, 1986 |
| A photoconductive member comprises a support and a light receiving layer comprising a first layer region comprising at least germanium atoms and being crystallized at least a portion thereof, a second region comprising an amorphous material comprising at least both of silicon atoms and |
| 4555465 |
Photoconductive member of amorphous silicon |
November 26, 1985 |
| A photoconductive member comprising a support and a light receiving layer provided on said support, having photoconductivity containing silicon atoms as a matrix and at least hydrogen atoms as constituent atom, said light receiving layer having a layer region with depth profile such that |
| 4547448 |
Photoconductive member comprising silicon and oxygen |
October 15, 1985 |
| A photoconductive member comprises a support for a photoconductive member; a first amorphous layer comprising an amorphous material containing silicon atoms as a matrix and exhibiting photoconductivity, said first amorphous layer having a first layer region containing oxygen atoms as |
| 4536460 |
Photoconductive member |
August 20, 1985 |
| A photoconductive member comprising a support and a silicon amorphous layer, and the silicon amorphous layer has a first layer region containing at least one of oxygen, nitrogen and carbon and a second layer region containing an element of Group III. The first layer exists internally |
| 4536459 |
Photoconductive member having multiple amorphous layers |
August 20, 1985 |
| A photoconductive member, comprises a support for a photoconductive member, a first amorphous layer exhibiting photoconductivity comprising an amorphous material containing silicon atoms as a martix, said first amorphous layer having a first layer region containing oxygen atoms in a |
| 4532198 |
Photoconductive member |
July 30, 1985 |
| A photoconductive member is provided, which comprises a support for photoconductive member and a light receiving layer with a layer constitution, comprising a first layer region containing at least germanium atoms of which at least a portion is crystallized, a second region comprisin |
| 4529679 |
Photoconductive member |
July 16, 1985 |
| A photoconductive member comprises a substrate and a light receiving layer having photoconductive provided on said support, comprising silicon atoms as a matrix and at least halogen atoms as constituent atoms said light receiving layer having a depth profile with respect to the layer thi |
| 4501807 |
Photoconductive member having an amorphous silicon layer |
February 26, 1985 |
| A photoconductive member comprising a support for photoconductive member and an amorphous layer exhibiting photoconductivity comprising an amorphous material containing silicon atoms as a matrix is characterized in that said amorphous layer has a first layer region containing, as con |
| 4486521 |
Photoconductive member with doped and oxygen containing amorphous silicon layers |
December 4, 1984 |
| A photoconductive member comprises a support for a photoconductive member and an amorphous layer containing an amorphous material comprising silicon atom as a matrix and having photoconductivity, said amorphous layer comprising a first layer region containing oxygen atom as a constituent |
| 4483911 |
Photoconductive member with amorphous silicon-carbon surface layer |
November 20, 1984 |
| A photoconductive member comprises a support and an amorphous layer comprising a first layer region and a second layer region, the first layer region having photoconductivity comprising an amorphous material which comprises silicon atoms as a matrix and at least one member selected from |
| 4465750 |
Photoconductive member with a -Si having two layer regions |
August 14, 1984 |
| A photoconductive member comprises a support and an amorphous layer compsed of a first layer region composed of a photoconductive amorphous silicon containing p- or n-type impurity distributed nonuniformly and continuously in the layer thickness direction, and a second layer region compo |
| 4460670 |
Photoconductive member with .alpha.-Si and C, N or O and dopant |
July 17, 1984 |
| A photoconductive member comprises a support for a photoconductive member and an amorphous layer having photoconductivity constituted of an amorphous material comprising silicon atoms as a matrix, said amorphous layer having a first layer region containing at least one kind of atoms |
| 4460669 |
Photoconductive member with .alpha.-Si and C, U or D and dopant |
July 17, 1984 |
| A photoconductive member comprises a support for a photoconductive member and an amorphous layer having photoconductivity constituted of an amorphous material comprising silicon atoms as a matrix, said amorphous layer having a first layer region containing as the constituent atom at |
| 4452875 |
Amorphous photoconductive member with .alpha.-Si interlayers |
June 5, 1984 |
| A photoconductive member comprises a support for a photoconductive member, an interface layer comprising an amorphous material containing silicon atoms and nitrogen atoms as constituent atoms, a rectifying layer comprising an amorphous material containing atoms (A) belonging to the g |
| 4452874 |
Photoconductive member with multiple amorphous Si layers |
June 5, 1984 |
| A photoconductive member comprises a support for photoconductive member, an interface layer comprising an amorphous material represented by any of the formulas:(wherein X represents a halogen atom),a rectifying layer comprising an amorphous material containing atoms (A) belonging to the |
| 4423133 |
Photoconductive member of amorphous silicon |
December 27, 1983 |
| A photoconductive layer comprises a support and an amorphous layer. The amorphous layer is photoconductive, comprises silicon as matrix and hydrogen and/or halogen, and has a layer region containing group III atoms which is distributed such that the distribution is continuous in the |
