| Patent Number |
Title Of Patent |
Date Issued |
| RE37992 |
Magnetoresistive head using exchange anisotropic magnetic field with an antiferromagnetic layer |
February 18, 2003 |
| A magnetoresistive head including a magnetoresistive film formed in a read-track region, and antiferromagnetic and ferromagnetic films are formed on each end of the magnetoresistive film outside of the read-track region such that bias magnetization is applied to the magnetoresistive |
| RE37819 |
Manufacturing method for magnetoresistive head having an antiferromagnetic layer of PTMN |
August 13, 2002 |
| The present invention provides a magnetoresistive head wherein: a magnetoresistive film is created in a read-track region at the center of the magnetoresistive head; an antiferromagnetic film and a ferromagnetic film experiencing an exchange coupling magnetic field due to direct cont |
| 7616410 |
Magnetic detecting element having free layer formed of NiFe alloy and method of manufacturing th |
November 10, 2009 |
| There are provided a magnetic detecting element capable of maintaining large .DELTA.RA and of reducing magnetostriction by improving a material forming a free magnetic layer, and a method of manufacturing the same. An NiFeX alloy layer is formed in a free magnetic layer. For example, the |
| 7609489 |
Magnetic sensor using NiFe alloy for pinned layer |
October 27, 2009 |
| A magnetic sensor comprising: a multilayer film which has a pinned magnetic layer, the magnetization thereof being pinned in one direction, and a free magnetic layer formed on the pinned magnetic layer with a nonmagnetic material layer provided therebetween, in which current is allow |
| 7599155 |
Self-pinned CPP giant magnetoresistive head with antiferromagnetic film absent from current path |
October 6, 2009 |
| A CPP giant magnetoresistive head includes lower and upper shield layers, and a giant magnetoresistive element disposed between the upper and lower shield layers and including a pinned magnetic layer, a free magnetic layer and a nonmagnetic layer disposed between the pinned magnetic laye |
| 7567413 |
Magnetic detecting element with diffusion-preventing layer between spacer Cu and magnetic layer, |
July 28, 2009 |
| There is provided a magnetic detecting element by devising a configuration of a free magnetic layer or a pinned magnetic layer, and a method of manufacturing a magnetic detecting element. The free magnetic layer is formed to have a three-layered structure of a CoMnZ alloy layer, a CoMnX |
| 7564661 |
Magnetic sensing element including free layer having gradient composition and method for manufac |
July 21, 2009 |
| A magnetic sensing element which allows a high reproduction output and reduction in asymmetry of reproduction waveform to become mutually compatible, as well as a method for manufacturing the same, is provided. In the inside of a second pinned magnetic layer and a free magnetic layer |
| 7558029 |
Magnetic detectible head comprising free layer |
July 7, 2009 |
| There is provided a magnetic detecting element having a large .DELTA.RA. A free magnetic layer has a three layer structure in which a CoFe layer, an Ni.sub.aFe.sub.b alloy layer (where a and b are represented by at %, 0.ltoreq.a.ltoreq.25, and a+b=100), and a CoFe layer are laminated fro |
| 7554776 |
CCP magnetic detecting element including a self-pinned CoFe layer |
June 30, 2009 |
| A CPP magnetic sensing element is provided which may exhibit a large value of .DELTA.RA (the product of the resistance variation .DELTA.R and area A of the magnetic sensing element). The magnetic sensing element includes a free magnetic layer and a pinned magnetic layer. At least one of |
| 7502210 |
CPP magnetic detecting device containing NiFe alloy on free layer thereof |
March 10, 2009 |
| A magnetic detecting device having a large .DELTA.RA value is provided. A free magnetic layer has a three layer structure in which a CoFe layer, a Ni.sub.aFe.sub.b alloy layer (here, a and b are represented by at %, and satisfy the relationship of 47.ltoreq.a.ltoreq.77 and a+b=100), and |
| 7499249 |
Spin valve-GMR element in which a non-metal laminate layer is provided as a free magnetic layer |
March 3, 2009 |
| A magnetic detecting element capable of maintaining a large .DELTA.RA and reducing magnetostriction by changing a material of a free magnetic layer, and a method of manufacturing the same is provided. A CoMnXZ alloy layer or CoMnXRh alloy layer is formed in a free magnetic layer where an |
| 7499248 |
Magnetic detective head comprising free layer |
March 3, 2009 |
| A free magnetic layer is a laminated body of a Co.sub.2MnZ alloy layer (Z is one or more elements selected from a group consisting of Al, Sn, In, Sb, Ga, Si, Ge, Pb, and Zn) and a Co.sub.aFe.sub.100-a alloy layer. The Co.sub.aFe.sub.100-a alloy layer has a composition ratio 76.ltoreq |
| 7480122 |
Magnetic detecting device having free layer or pinned layer formed by lamination of magnetic all |
January 20, 2009 |
| A magnetic detecting device and a method of manufacturing the magnetic detecting device are provided. Non-magnetic material layer-side magnetic layers of second fixed magnetic layers form a fixed magnetic layer. Each of the non-magnetic material layer-side magnetic layers and a free |
| 7466525 |
Magnetic sensing element including laminated film composed of half-metal and NiFe alloy as free |
December 16, 2008 |
| A magnetic sensing element exhibiting a large .DELTA.RA is provided, in which a free magnetic layer has a small coercive force Hc and a small magnetostriction constant .lamda.s. The free magnetic layer includes a Co.sub.2MnZ alloy layer (where Z may represent at least one element sel |
| 7463457 |
CPP giant magnetoresistive element with particular bulk scattering coefficient |
December 9, 2008 |
| A CPP giant magnetoresistive element includes a multilayer film including a lower pinned magnetic layer having a laminated ferrimagnetic structure including a lower first pinned magnetic sublayer, a lower nonmagnetic intermediate sublayer, and a lower second pinned magnetic sublayer; a |
| 7428128 |
High read output, high sensitivity magnetic sensing element |
September 23, 2008 |
| A magnetic sensing element has pinned magnetic layers disposed on the two sides of a free magnetic layer in the track width direction with nonmagnetic conductive layers therebetween, and an electric current flows through these layers in parallel to the surfaces. The back end of the f |
| 7362546 |
Spin-valve magnetoresistive element having fixed magnetic layer of epitaxal laminate including m |
April 22, 2008 |
| A fixed magnetic layer contains a first magnetic layer formed on a non-magnetic metal layer. The non-magnetic metal layer is composed of an X--Mn alloy (where X is selected from Pt, Pd, Ir, Rh, Ru, Os, Ni, and Fe). While atoms forming the first magnetic layer and atoms forming the no |
| 7336453 |
Magnetic sensing element including pinned layer and/or free layer composed of [110] crystal plan |
February 26, 2008 |
| A magnetic sensing element using a thin film composed of an adequately crystallized Heusler alloy is provided. At least one of free magnetic layer and pinned magnetic layer includes a Heusler alloy layer. The Heusler alloy layer has a body-centered cubic (bcc) structure, in which equ |
| 7336451 |
Magnetic sensing element containing half-metallic alloy |
February 26, 2008 |
| A pinned magnetic layer 20 and a free magnetic layer 26 include a magnetic portion 17 and a magnetic sublayer 22, respectively, each comprising a half-metallic ferromagnetic alloy. Since each of the magnetic portion 17 and magnetic sublayer 22 comprising the half-metallic alloy layer has |
| 7327539 |
CPP giant magnetoresistive head with large-area metal film provided between shield and element |
February 5, 2008 |
| A CPP giant magnetoresistive (GMR) head includes lower and upper shield layers; and a GMR element disposed between the upper and lower shield layers and comprising a pinned magnetic layer, a free magnetic layer, and a nonmagnetic layer disposed between the pinned magnetic layer and the |
| 7310207 |
Magnetic sensing element including magnetic layer composed of Heusler alloy disposed on underlay |
December 18, 2007 |
| A magnetic sensing element using a Heusler alloy is provided. In the magnetic sensing element, a free magnetic layer composed of a Heusler alloy layer is disposed on a nonmagnetic layer that corresponds to an fcc layer having the face-centered cubic (fcc) structure. Equivalent crystal |
| 7295409 |
CPP giant magnetoresistive element with particular bulk scattering coefficient |
November 13, 2007 |
| A CPP giant magnetoresistive element includes a multilayer film including a lower pinned magnetic layer having a laminated ferrimagnetic structure including a lower first pinned magnetic sublayer, a lower nonmagnetic intermediate sublayer, and a lower second pinned magnetic sublayer; a |
| 7268984 |
Magnetic detecting element having a self-pinned layer |
September 11, 2007 |
| A CPP magnetic detecting element having a pinned magnetic layer whose magnetization is fixed by its uniaxial anisotropy in a structure that CIP magnetic detecting elements do not allow. In the CPP magnetic detecting element, the upper and lower surfaces of a pinned magnetic layer having |
| 7268983 |
Magnetic sensing device with multilayered pinned magnetic layer having magnetostriction-enhancin |
September 11, 2007 |
| A magnetic sensing device is presented that has a multilayer material with a pinned magnetic layer, a nonmagnetic material layer, and a free magnetic layer. The pinned magnetic layer is a composite with a nonmagnetic intermediate layer and magnetic thin-film layers separated from eac |
| 7268978 |
Self-pinned magnetic detecting element |
September 11, 2007 |
| A CPP magnetic detecting element having a pinned magnetic layer whose magnetization is fixed by its uniaxial anisotropy in a structure that CIP magnetic detecting elements do not allow. In the CPP magnetic detecting element, the upper and lower surfaces of a pinned magnetic layer is |
| 7229706 |
Magnetic detecting element having pinned magnetic layers disposed on both sides of free magnetic |
June 12, 2007 |
| The present invention provides a magnetic detecting element capable of increasing a difference between the ease of a conduction electron flow in a low-resistance state and the ease of a conduction electron flow in a high-resistance state to increase a resistance change .DELTA.R. In the |
| 7220499 |
CPP giant magnetoresistive head having antiferromagnetic film disposed in rear of element |
May 22, 2007 |
| A CPP giant magnetoresistive head includes lower and upper shield layers with a predetermined distance therebetween, and a giant magnetoresistive element (GMR) including pinned and free magnetic layers disposed between the upper and lower shield layers with a nonmagnetic layer interposed |
| 7218487 |
Exchange coupling film and magnetoresistive element using the same |
May 15, 2007 |
| An exchange coupling film including an antiferromagnetic layer and a ferromagnetic layer in contact with the antiferromagnetic layer so as to generate an exchange coupling magnetic field is provided. A PtMn alloy is used as the material of the antiferromagnetic layer. Crystal planes of |
| 7218485 |
GMR element having fixed magnetic layer provided on side surface of free magnetic layer |
May 15, 2007 |
| A free magnetic layer contains free magnetic material layers and an intermediate layer interposed therebetween. A fixed magnetic layer contains fixed magnetic material layers and a non-magnetic intermediate layer interposed therebetween. The free magnetic material layer and the fixed |
| 7196879 |
Exchange coupling film and magnetoresistive element using the same |
March 27, 2007 |
| A PtMn alloy film known as an antiferromagnetic material having excellent corrosion resistance is used for an antiferromagnetic layer. However, an exchange coupling magnetic field is decreased depending upon the conditions of crystal grain boundaries. Therefore, in the present invent |
| 7164560 |
Spin-valve magnetoresistive thin film element |
January 16, 2007 |
| A spin-valve magnetoresistive thin film element comprises an antiferromagnetic layer and a pinned magnetic film. The pinned magnetic film contacts the antiferromagnetic layer, wherein a magnetizing direction is pinned by an exchange coupling magnetic field between the pinned magnetic |
| 7158354 |
Dual-type magnetic detecting element in which free magnetic layer and pinned magnetic layer have |
January 2, 2007 |
| A first free magnetic layer, a second free magnetic layer, a lower pinned magnetic layer, and an upper pinned magnetic layer are formed of magnetic materials whose .beta. values are suitably set so that the resistances for up-spin conduction electrons of all the magnetic layers become lo |
| 7142399 |
Exchange coupling film and magnetoresistive element using the same |
November 28, 2006 |
| An exchange coupling film including an antiferromagnetic layer and a ferromagnetic layer in contact with the antiferromagnetic layer so as to generate an exchange coupling magnetic field is provided. A PtMn alloy is used as the material of the antiferromagnetic layer. Crystal planes of |
| 7132175 |
GMR magnetic detecting element comprising current limiting layer provided in free magnetic layer |
November 7, 2006 |
| The present invention provides a CPP-type spin-valve magnetic detecting element permitting a decrease in an effective element area even with a large optical element area. A current limiting layer having an insulating portion and a conductive portion is formed in a free magnetic layer to |
| 7126797 |
Spin valve magnetoresistive element having pinned magnetic layer composed of epitaxial laminated |
October 24, 2006 |
| A magnetic sensor includes a pinned magnetic layer having first and second magnetic sublayers sandwiching a nonmagnetic metal layer. The nonmagnetic metal layer contains at least one of Ru, Re, Os, Ti, Rh, Ir, Pd, Pt, and Al. The atoms in the first magnetic sublayer and the atoms in the |
| 7123453 |
Exchange coupling film and magnetoresistive element using the same |
October 17, 2006 |
| A PtMn alloy film known as an antiferromagnetic material having excellent corrosion resistance is used for an antiferromagnetic layer. However, an exchange coupling magnetic field is decreased depending upon the conditions of crystal grain boundaries. Therefore, in the present invent |
| 7119998 |
Exchange coupling film and magnetoresistive element using the same |
October 10, 2006 |
| An exchange coupling film including an antiferromagnetic layer and a ferromagnetic layer in contact with the antiferromagnetic layer so as to generate an exchange coupling magnetic field is provided. A PtMn alloy is used as the material of the antiferromagnetic layer. Crystal planes of |
| 7119996 |
Exchange coupling film and magnetoresistive element using the same |
October 10, 2006 |
| A PtMn alloy film known as an antiferromagnetic material having excellent corrosion resistance is used for an antiferromagnetic layer. However, an exchange coupling magnetic field is decreased depending upon the conditions of crystal grain boundaries. Therefore, in the present invent |
| 7106559 |
Exchange coupling film and magnetoresistive element using the same |
September 12, 2006 |
| An exchange coupling film including an antiferromagnetic layer and a ferromagnetic layer in contact with the antiferromagnetic layer so as to generate an exchange coupling magnetic field is provided. A PtMn alloy is used as the material of the antiferromagnetic layer. Crystal planes of |
| 7092222 |
Exchange coupled film having improved current-carrying reliability and improved rate of change i |
August 15, 2006 |
| A seed layer having a chromium content in the range of 35 to 60 atomic percent and a thickness of 10 to 200 .ANG. is deposited to have a single phase of the face-centered cubic structure by optimizing the sputtering conditions, etc. The surface of the seed layer maintaining the face- |
| 7077936 |
Method of producing exchange coupling film and method of producing magnetoresistive sensor by us |
July 18, 2006 |
| A laminate structure includes an antiferromagnetic layer, a pinned magnetic layer, and a seed layer contacting the antiferromagnetic layer on a side opposite to pinned magnetic layer. The seed layer is constituted mainly by face-centered cubic crystals with (111) planes preferentiall |
| 7054116 |
Spin valve element and thin film magnetic head |
May 30, 2006 |
| A spin valve element includes an antiferromagnetic layer, a pinned magnetic layer formed in contact with the antiferromagnetic layer so that the magnetization direction thereof is pinned by an exchange coupling magnetic field with the antiferromagnetic layer, a nonmagnetic conductive |
| 7050275 |
Exchange coupled film having improved current-carrying reliability and improved rate of change i |
May 23, 2006 |
| A seed layer having a chromium content in the range of 35 to 60 atomic percent and a thickness of 10 to 200 .ANG. is deposited to have a single phase of the face-centered cubic structure by optimizing the sputtering conditions, etc. The surface of the seed layer maintaining the face- |
| 7045224 |
Magnetic detecting element having antiferromagnetic film having predetermined space in track wid |
May 16, 2006 |
| The present invention provides a magnetic detecting element including a pinned magnetic layer and a first antiferromagnetic layer which constitutes an exchange coupling film and the structures of which are optimized for properly pinning magnetization of the pinned magnetic layer, imp |
| 7029771 |
Magnetic sensor having free layer additionally provided with magnetic anisotropy by shape anisot |
April 18, 2006 |
| An intermediate region is formed at a central portion of an element in a track width direction, and an antiferromagnetic layer is not provided at the intermediate region. Accordingly, a sense current can be prevented from being shunted to the intermediate region, and as a result, imp |
| 7023670 |
Magnetic sensing element with in-stack biasing using ferromagnetic sublayers |
April 4, 2006 |
| In a magnetic sensing element, the magnetization direction of a ferromagnetic layer is pinned by an exchange coupling magnetic field between a second antiferromagnetic layer and the ferromagnetic layer, and the magnetization of a free magnetic layer is oriented in a direction substan |
| 7005014 |
Method of producing exchange coupling film and method of producing magnetoresistive sensor by us |
February 28, 2006 |
| A laminate structure includes an antiferromagnetic layer, a pinned magnetic layer, and a seed layer contacting the antiferromagnetic layer on a side opposite to pinned magnetic layer. The seed layer is constituted mainly by face-centered cubic crystals with (111) planes preferentiall |
| 6992867 |
Spin valve element and thin film magnetic head having antiferromagnetic coupled layers |
January 31, 2006 |
| A spin valve element includes an antiferromagnetic layer, a pinned magnetic layer formed in contact with the antiferromagnetic layer so that the magnetization direction thereof is pinned by an exchange coupling magnetic field with the antiferromagnetic layer, a nonmagnetic conductive |
| 6947263 |
CPP mode magnetic sensing element including a multilayer free layer biased by an antiferromagnet |
September 20, 2005 |
| In a CPP magnetic sensing element, a free magnetic layer has a laminated ferrimagnetic structure. Since the physical thickness of the free magnetic layer is increased, the product of a change in resistance .DELTA.R and an area A can be improved and read output can be improved. Since the |
| 6929959 |
Manufacturing method of CPP type magnetic sensor having current-squeezing path |
August 16, 2005 |
| On a multilayer film formed on a lower electrode layer, a resist layer having cutaway parts at a lower portion is formed, and on parts of the upper surface of the multilayer film which are not overlapped with the resist layer except for areas inside the cutaway parts, first gap layers |
