Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Saikawa; Takeshi
Address:
Ome, JP
No. of patents:
6
Patents:












Patent Number Title Of Patent Date Issued
7208391 Method of manufacturing a semiconductor integrated circuit device that includes forming an isola April 24, 2007
A method for manufacturing a semiconductor integrated circuit device includes the steps of forming an isolation trench in an isolation region of a semiconductor substrate, filling the isolation trench up to predetermined middle position in its depth direction with a first insulating
7074691 Method of manufacturing a semiconductor integrated circuit device that includes forming dummy pa July 11, 2006
A method for manufacturing a semiconductor integrated circuit device includes the steps of forming an isolation trench in an isolation region of a semiconductor substrate, filling the isolation trench up to predetermined middle position in its depth direction with a first insulating
7060589 Method for manufacturing a semiconductor integrated circuit device that includes covering the bo June 13, 2006
A method for manufacturing a semiconductor integrated circuit device includes the steps of forming an isolation trench in an isolation region of a semiconductor substrate, filling the isolation trench up to predetermined middle position in its depth direction with a first insulating
6767782 Manufacturing method of semiconductor device July 27, 2004
Charge-up damages to a substrate are reduced in a manufacturing process using plasma, and the reliability of a semiconductor device is improved.By forming an insulating film on the back of a substrate before a step of forming a first wiring layer, even if a plasma CVD method, a sputtering
6746913 Method of manufacturing semiconductor integrated circuit device comprising a memory cell and a c June 8, 2004
A silicon oxide film on which a capacitor of a semiconductor integrated circuit device is formed is formed by the plasma CVD method at a temperature of 450.degree. C. to 700.degree. C. In this semiconductor integrated circuit device, a memory cell formed of a MISFET for data transfer
6693008 Method of manufacturing a semiconductor integrated circuit device and a semiconductor integrated February 17, 2004
In order to fill in an isolation trench formed on a semiconductor substrate, the isolation trench is filled up to a predetermined middle position with a coating film first, and then an insulating film formed by a CVD method is deposited thereon. Additionally, the insulating film is p










 
 
  Recently Added Patents
Extensible framework for client-based active network measurement
Enediyne compounds, conjugates thereof, and uses and methods therefor
Device for installing conducting components in structures
Content display monitor
Method and system to generate finite state grammars using sample phrases
Hook
Antenna for an automobile
  Randomly Featured Patents
Non-aqueous composition for chemical treatment of a metallic substrate
EEPROM
Antenna connector
Paper products and physical objects as means to access and control a computer or to navigate over or act as a portal on a network
Programmable semiconductor memory
Engine enclosure for tractor
Method of modifying the development profile of photoresists
Expandable irrigation controller with optional high-density station module
Internal natural gas reformer-dividers for a solid oxide fuel cell generator configuration
13,14-Didehydro-inter-phenylene-19-oxo-PGF.sub.1 compounds