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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Saikawa; Takeshi
Address:
Ome, JP
No. of patents:
6
Patents:












Patent Number Title Of Patent Date Issued
7208391 Method of manufacturing a semiconductor integrated circuit device that includes forming an isola April 24, 2007
A method for manufacturing a semiconductor integrated circuit device includes the steps of forming an isolation trench in an isolation region of a semiconductor substrate, filling the isolation trench up to predetermined middle position in its depth direction with a first insulating
7074691 Method of manufacturing a semiconductor integrated circuit device that includes forming dummy pa July 11, 2006
A method for manufacturing a semiconductor integrated circuit device includes the steps of forming an isolation trench in an isolation region of a semiconductor substrate, filling the isolation trench up to predetermined middle position in its depth direction with a first insulating
7060589 Method for manufacturing a semiconductor integrated circuit device that includes covering the bo June 13, 2006
A method for manufacturing a semiconductor integrated circuit device includes the steps of forming an isolation trench in an isolation region of a semiconductor substrate, filling the isolation trench up to predetermined middle position in its depth direction with a first insulating
6767782 Manufacturing method of semiconductor device July 27, 2004
Charge-up damages to a substrate are reduced in a manufacturing process using plasma, and the reliability of a semiconductor device is improved.By forming an insulating film on the back of a substrate before a step of forming a first wiring layer, even if a plasma CVD method, a sputtering
6746913 Method of manufacturing semiconductor integrated circuit device comprising a memory cell and a c June 8, 2004
A silicon oxide film on which a capacitor of a semiconductor integrated circuit device is formed is formed by the plasma CVD method at a temperature of 450.degree. C. to 700.degree. C. In this semiconductor integrated circuit device, a memory cell formed of a MISFET for data transfer
6693008 Method of manufacturing a semiconductor integrated circuit device and a semiconductor integrated February 17, 2004
In order to fill in an isolation trench formed on a semiconductor substrate, the isolation trench is filled up to a predetermined middle position with a coating film first, and then an insulating film formed by a CVD method is deposited thereon. Additionally, the insulating film is p










 
 
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