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Inventor:
Roggwiller; Peter
Address:
Riedt Neerach, CH
No. of patents:
14
Patents:












Patent Number Title Of Patent Date Issued
5587594 Semiconductor component having gate-turn-off thyristor and reduced thermal impairment December 24, 1996
To provide thermal relief, particularly of the edge of disk-shaped gate-turn-off GTO thyristors (GTO) as are used in converters in power electronics, at least one cooling segment which is isolated from a GTO cathode metallization of the GTO thyristor segment (GTO) by a gate electrode
5093693 PN-junction with guard ring March 3, 1992
In a semiconductor component, a pn junction which emerges at a main surface (2) of a semiconductor substrate (1) at the edge of a highly doped zone (3) is formed by a laterally bounded, highly doped zone (3) extending inwards from a main surface (2) of the semiconductor substrate (1) and
5081050 Method of making a gate turn-off thyristor using a simultaneous diffusion of two different accep January 14, 1992
In a high-reverse-voltage GTO thyristor, a negative beveling (6) with comparatively high beveling angle (.alpha.) is possible as edge contouring as a result of separating the p-type base layer into a central p-type base layer (4) of small depth and high edge concentration and a p-type ba
5057440 Manufacturing gate turn-off thyristor having the cathode produced in two diffusion steps October 15, 1991
A method for producing a gate turn-off thyristor (GTO) having a semi-conductor substrate (1) with at least one p-conducting anode layer (4), one n-type base layer (6), one p-type base layer (7) which is in electrical contact with a gate, and one n-conducting cathode layer (8) has a c
5017992 High blocking-capacity semiconductor component May 21, 1991
In the case of a high blocking-capacity semiconductor component with an anode structure, which provides between the n-type base layer (6) and the anode-side p-type emitter regions (8) an n-doped barrier layer (7), and between the p-type emitter regions (8) emitter short-circuits with
5003368 Turn-off thyristor March 26, 1991
In a high-reverse-voltage GTO thyristor, a negative beveling (6) with comparatively high beveling angle (.alpha.) is possible as edge contouring as a result of separating the p-type base layer into a central p-type base layer (4) of small depth and high edge concentration and a p-type ba
4961099 High-power GTO thyristor and also a method for its manufacture October 2, 1990
In a high-power GTO thyristor with anode short-circuits (7) in the anode-side p-type emitter layer (6), the triggering sensitivity is improved by an additional thin and lightly doped p.sup.- -type barrier layer (9) between the anode short-circuits (7) and the n-type base layer (5) wi
4943840 Reverse-conducting thyristor July 24, 1990
A reverse-conducting thyristor having an integrated antiparallel diode, wherein an improvement of the switching characteristics is achieved by the fact that a field-controlled thyristor (FCT) is provided as the thyristor. According to a preferred illustrative embodiment, this FCT include
4910573 Gate turn-off thyristor and method of producing same March 20, 1990
A gate turn-off thyristor (GTO) having a semi-conductor substrate (1) with at least one p-conducting anode layer (4), one n-type base layer (6), one p-type base layer (7) which is in electrical contact with a gate, and one n-conducting cathode layer (8) has a cathode layer (8) with a hig
4843449 Controllable power semiconductor June 27, 1989
In a controllable power semiconductor component which consists of a plurality of parallel-connected individual elements disposed adjacently to one another, the control contacts of which are connected to a common gate, different line resistances between gate and control contacts are c
4801554 Process for manufacturing a power semiconductor component January 31, 1989
A process for manufacturing a power semiconductor component having a component of this type is presented which has at least three consecutive layers and possessing a high current capacity and small power losses. For contacting the first two layers, the component has first second metalliz
4768075 Power semiconductor module August 30, 1988
A power semiconductor module including a cascade circuit of a low-voltage high-current MOSFET and of a bipolar semiconductor element, for example a field-controlled thyristor, GTO thyristor or Darlington transistor, as a hybrid combination. In this manner, it is possible to achieve a
4642669 Semiconductor device having a blocking capability in only one direction February 10, 1987
For improving the dynamic characteristics of semiconductor components required to absorb high reverse voltages only in one polarity (diodes, reverse-conducting thyristors and asymmetric thyristors), in many cases structures having an n base consisting of two layers are used. In order to
4596999 Power semiconductor component and process for its manufacture June 24, 1986
A power semiconductor component having a component of this type is presented which has at least three consecutive layers and possessing a high current capacity and small power losses. For contacting the first two layers, the component has first and second metallized contact planes, w










 
 
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