An inductor for a semiconductor device is formed within a groove in an insulating layer on a semiconductor substrate. A number of lower conductive lines are formed across the groove. A cylindrical insulator is formed over the lower conductive lines and aligned with the groove. Upper
An inductor for a semiconductor device is formed within a groove in an insulating layer on a semiconductor substrate. A number of lower conductive lines are formed across the groove. A cylindrical insulator is formed over the lower conductive lines and aligned with the groove. Upper
A field effect transistor includes radially extending grooves in a microelectronic substrate. At least one of the radially extending grooves includes a side branch groove extending from it. A ring-shaped gate is included on the radially extending grooves. The ring-shaped gate defines
A field effect transistor includes radially extending grooves in a microelectronic substrate. At least one of the radially extending grooves includes a side branch groove extending from it. A ring-shaped gate is included on the radially extending grooves. The ring-shaped gate defines
A high threshold voltage MOS transistor is described having a triple diffused drain structure in which low, medium and high concentration impurity layers overlap each other. The MOS transistor is manufactured according to a method including the steps of: forming a first photosensitiv
A method for making a semiconductor device having a silicon-on-insulator structure comprises the steps of: forming a pad oxide on a wafer which has a lower silicon substrate, a buried oxide layer and an upper silicon layer, forming an oxynitride region on a predetermined portion of the
