| Patent Number |
Title Of Patent |
Date Issued |
| 7553702 |
Integrating a heat spreader with an interface material having reduced void size |
June 30, 2009 |
| An integrated heat spreader and die coupled with solder are disclosed herein. The heat spreader may have solder reservoirs. Additionally, the heat spreader and die may be coupled during a reflow process where the gaseous pressure surrounding the integrated heat spreader and the die is |
| 7485495 |
Integrated heat spreader with intermetallic layer and method for making |
February 3, 2009 |
| Integrated heat spreader and die coupled with solder in a manner forming an intermetallic compound having a higher liquidus temperature than the liquidus temperature of the solder used to create the intermetallic compound are described herein. |
| 7239517 |
Integrated heat spreader and method for using |
July 3, 2007 |
| Integrated heat spreader and die coupled with solder. The heat spreader may have solder reservoirs. Additionally, the heat spreader and die may be coupled during a reflow process where the gaseous pressure surrounding the integrated heat spreader and the die is varied. |
| 7205595 |
Polymer memory device with electron traps |
April 17, 2007 |
| An embodiment of the invention reduces damage caused to a polymer ferroelectric layer in a polymer ferroelectric memory device by creating excess holes in the insulating metal nitride and/or metal oxide layers between the metal electrodes and polymer ferroelectric layer. The excess h |
| 7183641 |
Integrated heat spreader with intermetallic layer and method for making |
February 27, 2007 |
| Integrated heat spreader and die coupled with solder in a manner forming an intermetallic compound having a higher liquidus temperature than the liquidus temperature of the solder used to create the intermetallic compound are described herein. |
| 7087521 |
Forming an intermediate layer in interconnect joints and structures formed thereby |
August 8, 2006 |
| Methods of forming a microelectronic structure are described. Those methods include forming a first adhesion layer on a conductive layer, forming an intermediate layer on the first adhesion layer, and forming a barrier layer on the intermediate layer, wherein the intermediate layer i |
