| Patent Number |
Title Of Patent |
Date Issued |
| 7604834 |
Formation of dielectric film by alternating between deposition and modification |
October 20, 2009 |
| The present invention discloses a method including: providing a substrate; and sequentially stacking layers of two or more diamond-like carbon (DLC) films over the substrate to form a composite dielectric film, the composite dielectric film having a k value of about 1.5 or lower, the |
| 7553694 |
Methods of forming a high conductivity diamond film and structures formed thereby |
June 30, 2009 |
| A method of forming a high thermal conductivity diamond film and its associated structures comprising selectively nucleating a region of a substrate, and forming a diamond film on the substrate such that the diamond film has large grains, which are at least about 20 microns in size. |
| 7501330 |
Methods of forming a high conductivity diamond film and structures formed thereby |
March 10, 2009 |
| A method of forming a high thermal conductivity diamond film and its associated structures comprising selectively nucleating a region of a substrate, and forming a diamond film on the substrate such that the diamond film has large grains, which are at least about 20 microns in size. |
| 7492041 |
Diamond-silicon hybrid integrated heat spreader |
February 17, 2009 |
| An electronic device includes a die further having a first major surface, and a second major surface. The electronic device also includes a plurality of connectors associated with the first major surface of the die, and an integrated heat spreader in thermally conductive relation wit |
| 7449780 |
Apparatus to minimize thermal impedance using copper on die backside |
November 11, 2008 |
| A method and apparatus to minimize thermal impedance using copper on the die or chip backside. Some embodiments use deposited copper having a thickness chosen to complement a given chip thickness, in order to reduce or minimize wafer warpage. In some embodiments, the wafer, having a |
| 7449361 |
Semiconductor substrate with islands of diamond and resulting devices |
November 11, 2008 |
| Disclosed is a method of forming a substrate having islands of diamond (or other material, such as diamond-like carbon), as well as integrated circuit devices formed from such a substrate. A diamond island can form part of the thermal solution for an integrated circuit formed on the |
| 7432532 |
Electronic assembly including a die having an integrated circuit and a layer of diamond to trans |
October 7, 2008 |
| Processes are described whereby a wafer is manufactured, a die from the wafer, and an electronic assembly including the die. The die has a diamond layer which primarily serves to spread heat from hot spots of an integrated circuit in the die. |
| 7417255 |
Methods of forming a high conductivity diamond film and structures formed thereby |
August 26, 2008 |
| A method of forming a high thermal conductivity diamond film and its associated structures comprising selectively nucleating a region of a substrate, and forming a diamond film on the substrate such that the diamond film has large grains, which are at least about 20 microns in size. |
| 7384693 |
Diamond-like carbon films with low dielectric constant and high mechanical strength |
June 10, 2008 |
| The present invention discloses a method including: providing a substrate; and sequentially stacking layers of two or more diamond-like carbon (DLC) films over the substrate to form a composite dielectric film, the composite dielectric film having a k value of about 1.5 or lower, the |
| 7365003 |
Carbon nanotube interconnects in porous diamond interlayer dielectrics |
April 29, 2008 |
| A method and structure for using porous diamond interlayer dielectrics (ILDs) in conjunction with carbon nanotube interconnects is herein described. A diamond ILD is deposited on an underlaying layer. The diamond layer is optionally and selectively removed of non-sp3 bond to create a |
| 7355247 |
Silicon on diamond-like carbon devices |
April 8, 2008 |
| Embodiments of the invention provide substrate with an insulator layer on the substrate. The insulator layer may include diamond-like carbon. A device, such a tri-gate transistor may be formed on the diamond-like carbon layer. |
| 7329588 |
Forming a reticle for extreme ultraviolet radiation and structures formed thereby |
February 12, 2008 |
| Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a plurality of openings in a portion of a first side of a substrate, bonding a first silicon layer of a silicon on insulator wafer to the first side of the substrate, wherein the |
| 7244963 |
Double gate field effect transistor with diamond film |
July 17, 2007 |
| A double gate silicon over insulator transistor may be formed wherein the bottom gate electrode is formed of a doped diamond film. The doped diamond film may be formed in the process of semiconductor manufacture resulting in an embedded electrode. The diamond film may be advantageous |
| 7170098 |
Electronic assembly including a die having an integrated circuit and a layer of diamond to trans |
January 30, 2007 |
| Processes are described whereby a wafer is manufactured, a die from the wafer, and an electronic assembly including the die. The die has a diamond layer which primarily serves to spread heat from hot spots of an integrated circuit in the die. |
| 7098047 |
Wafer reuse techniques |
August 29, 2006 |
| Briefly, test wafer reuse techniques. |
| 7071552 |
IC die with directly bonded liquid cooling device |
July 4, 2006 |
| An apparatus includes an integrated circuit (IC) die having a substrate formed of a first semiconductor material and a cooling device form of a second semiconductor material. The cooling device is directly mounted to the substrate of the IC die. |
| 7041993 |
Protective coatings for radiation source components |
May 9, 2006 |
| Erosion-resistive coatings are provided on critical plasma-facing surfaces of an electrical gas plasma head for an EUV source. The erosion-resistive coatings comprise diamond and diamond-like materials deposited onto the critical plasma-facing surfaces. A pure diamond coating is deposite |
| 6987028 |
Method of fabricating a microelectronic die |
January 17, 2006 |
| A method of fabricating a microelectronic die is provided. Transistors are formed in and on a semiconductor substrate. A channel of each transistor is stressed after the transistors are manufactured by first forming a diamond intermediate substrate at an elevated temperature on a handle |
| 6982133 |
Damage-resistant coatings for EUV lithography components |
January 3, 2006 |
| Damage-resistant coatings are provided on radiation-exposed surfaces of EUV lithographic components. The diamond coating provides resistance to particle impingement, cleaning processes, and degradation due to high temperatures. The diamond coating is beneficial when deposited on the |
| 6964880 |
Methods for the control of flatness and electron mobility of diamond coated silicon and structur |
November 15, 2005 |
| A method of forming a strained silicon device and structures formed thereby is described. That method comprises forming a polysilicon layer on a first and second side of a substantially planar diamond coated silicon wafer, wherein the second side of the substantially planar diamond coate |
| 6940096 |
Double gate field effect transistor with diamond film |
September 6, 2005 |
| A double gate silicon over insulator transistor may be formed wherein the bottom gate electrode is formed of a doped diamond film. The doped diamond film may be formed in the process of semiconductor manufacture resulting in an embedded electrode. The diamond film may be advantageous as |
| 6936497 |
Method of forming electronic dies wherein each die has a layer of solid diamond |
August 30, 2005 |
| A process is described whereby a wafer is manufactured, a die from the wafer, and an electronic assembly including the die. A thin diamond layer is formed on a sacrificial wafer, and an integrated circuit is then formed on the thin diamond layer. The sacrificial wafer is then removed to |
| 6924170 |
Diamond-silicon hybrid integrated heat spreader |
August 2, 2005 |
| An electronic device includes a die further having a first major surface, and a second major surface. The electronic device also includes a plurality of connectors associated with the first major surface of the die, and an integrated heat spreader in thermally conductive relation with |
| 6921706 |
Electronic assembly including a die having an integrated circuit and a layer of diamond to trans |
July 26, 2005 |
| Processes are described whereby a wafer is manufactured, a die from the wafer, and an electronic assembly including the die. The die has a diamond layer which primarily serves to spread heat from hot spots of an integrated circuit in the die. |
| 6847044 |
Electrical discharge gas plasma EUV source insulator components |
January 25, 2005 |
| A diamond insulator collar and methods for fabricating a diamond insulator collar for electrical discharge gas plasma EUV source. The insulating collar is positioned at the base of the central electrode in the pre-ionization region of the plasma head. The insulating collar prevents e |
| 6830813 |
Stress-reducing structure for electronic devices |
December 14, 2004 |
| Electronic apparatus having a heat transfer/stress-reducing layer combined with a device layer and methods of fabricating such electronic apparatus provide a means for incorporating a heat transfer layer in an integrated circuit. A structure with a diamond layer incorporated beneath a de |
| 6809328 |
Protective coatings for radiation source components |
October 26, 2004 |
| Erosion-resistive coatings are provided on critical plasma-facing surfaces of an electrical gas plasma head for an EUV source. The erosion-resistive coatings comprise diamond and diamond-like materials deposited onto the critical plasma-facing surfaces. A pure diamond coating is deposite |
| 6770966 |
Electronic assembly including a die having an integrated circuit and a layer of diamond to trans |
August 3, 2004 |
| Processes are described whereby a wafer is manufactured, a die from the wafer, and an electronic assembly including the die. The die has a diamond layer which primarily serves to spread heat from hot spots of an integrated circuit in the die. |
| 6743697 |
Thin silicon circuits and method for making the same |
June 1, 2004 |
| A method of coupling a single crystal semiconductor layer to a support substrate. Thinning the single crystal layer. Introducing an integrated circuit into the single crystal layer. And removing the thinned single crystal layer with the integrated circuit from the support substrate. |
| 6730972 |
Amorphous carbon insulation and carbon nanotube wires |
May 4, 2004 |
| An apparatus includes a carbon nanotube coupled with a first device and a second device of an integrated circuit, wherein electrons can flow between the first device and the second device along the carbon nanotube. Doped amorphous carbon is deposited on the integrated circuit structure. |
| 6706981 |
Techniques to fabricate a reliable opposing contact structure |
March 16, 2004 |
| A switch structure having multiple contact surfaces that may contact each other. One or more of the contact surfaces may be coated with a resilient material such as diamond. |
| 6667522 |
Silicon wafers for CMOS and other integrated circuits |
December 23, 2003 |
| Techniques include heating a substantially uniformly boron-doped wafer to achieve a significantly increased resistivity in a near-surface region of the wafer and forming at least one electrical circuit element in the near-surface region. Integrated circuits or other devices may include a |
| 6621022 |
Reliable opposing contact structure |
September 16, 2003 |
| A switch structure having multiple contact surfaces that may contact each other. One or more of the contact surfaces may be coated with a resilient material such as diamond. |
| 6548313 |
Amorphous carbon insulation and carbon nanotube wires |
April 15, 2003 |
| An apparatus includes a carbon nanotube coupled with a first device and a second device of an integrated circuit, wherein electrons can flow between the first device and the second device along the carbon nanotube. Doped amorphous carbon is deposited on the integrated circuit structure. |
| 6423615 |
Silicon wafers for CMOS and other integrated circuits |
July 23, 2002 |
| Techniques include heating a substantially uniformly boron-doped wafer to achieve a significantly increased resistivity in a near-surface region of the water and forming at least one electrical circuit element in the near-surface region. |
| 6406981 |
Method for the manufacture of semiconductor devices and circuits |
June 18, 2002 |
| A method of coupling a single crystal semiconductor layer on a surface of a substrate comprising a polycrystalline semiconductor material such that the single crystal layer and the polycrystalline material are in direct contact. |
| 6387572 |
Low CTE substrate for reflective EUV lithography |
May 14, 2002 |
| A substrate for reflective EUV lithography that includes a first layer that has a low coefficient of thermal expansion and a second layer, formed on the first layer, that has a high surface quality. The second layer may have a coefficient of thermal expansion that is higher than the |
| 6238482 |
Method of producing a wafer with an epitaxial quality layer and device with epitaxial quality la |
May 29, 2001 |
| A method of making a wafer is provided. A first semiconductor film is formed onto a semiconductor substrate. An epitaxial film is formed onto an epitaxial wafer. The epitaxial wafer is placed with the epitaxial film on the first semiconductor film. The epitaxial film is debonded from the |
| 6132517 |
Multiple substrate processing apparatus for enhanced throughput |
October 17, 2000 |
| A dual wafer processing apparatus (4) includes a chamber housing (14) defining an interior and having upper, lower and central portions (18, 20, 16). An electrostatic chuck (34) has electrostatic chucking surfaces (38, 40) on opposite sides. The chuck is rotatably mounted within the cham |
| 6070550 |
Apparatus for the stabilization of halogen-doped films through the use of multiple sealing layer |
June 6, 2000 |
| A method and apparatus for depositing a halogen-doped oxide film having a low dielectric constant that is resistant to moisture absorption and outgassing of the halogen dopant, and that retains these qualities despite subsequent processing steps. The method begins by introducing process |
| 5661093 |
Method for the stabilization of halogen-doped films through the use of multiple sealing layers |
August 26, 1997 |
| A method and apparatus for depositing a halogen-doped oxide film having a low dielectric constant that is resistant to moisture absorption and outgassing of the halogen dopant, and that retains these qualities despite subsequent processing steps. The method begins by introducing process |
| 5607723 |
Method for making continuous thin diamond film |
March 4, 1997 |
| A continuous thin diamond film having a thickness of less than about 2 microns has a low leakage. The thin diamond film may be supported on a supporting grid and may be incorporated into an X-ray window. The film may be formed in a DC assisted CVD process where in a first phase a relativ |
| 5432003 |
Continuous thin diamond film and method for making same |
July 11, 1995 |
| A continuous thin diamond film having a thickness of less than about 2 microns has a permeability to helium lower than about 1.times.10.sup.-6 standard cubic centimeters of helium per second per square millimeter of surface area. The thin diamond film may be supported on a supporting gri |
| 5131963 |
Silicon on insulator semiconductor composition containing thin synthetic diamone films |
July 21, 1992 |
| A process is provided for making a semiconductor element comprising a single-crystal layer of silicon on a diamond insulator. |
