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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Ramamoorthi; Sriram
Address:
Corvallis, OR
No. of patents:
32
Patents:












Patent Number Title Of Patent Date Issued
8084285 Forming a micro electro mechanical system December 27, 2011
A method of forming a micro-electro mechanical system (MEMS), includes (1) removing material from a first wafer to define a first movable portion corresponding to an x-y accelerometer and a second movable portion corresponding to a z accelerometer, where each movable portion comprise
7855151 Formation of a slot in a silicon substrate December 21, 2010
A slot is formed that reaches through a first side of a silicon substrate to a second side of the silicon substrate. A trench is laser patterned. The trench has a mouth at the first side of the silicon substrate. The trench does not reach the second side of the silicon substrate. The
7851876 Micro electro mechanical system December 14, 2010
Embodiments of a micro electro mechanical system are disclosed.
7847368 Multilayer film with stack of nanometer-scale thicknesses December 7, 2010
This disclosure describes system(s) and/or method(s) enabling contacts for individual nanometer-scale-thickness layers of a multilayer film.
7727820 Misalignment-tolerant methods for fabricating multiplexing/demultiplexing architectures June 1, 2010
This disclosure relates to misalignment-tolerant processes for fabricating multiplexing/demultiplexing architectures. One process enables fabricating a multiplexing/demultiplexing architecture at a tolerance greater than a pitch of conductive structures with which the architecture is
7683435 Misalignment-tolerant multiplexing/demultiplexing architectures March 23, 2010
This disclosure relates to misalignment-tolerant multiplexing/demultiplexing architectures. One architecture enables communication with a conductive-structure array having a narrow spacing and pitch. Another architecture can comprise address elements having a width substantially iden
7608998 Vacuum device having non-evaporable getter component with increased exposed surface area October 27, 2009
A vacuum device, including a substrate and a support structure having a support perimeter, where the support structure is disposed over the substrate. In addition, the vacuum device also includes a non-evaporable getter layer having an exposed surface area. The non-evaporable getter
7494593 Method for forming a cantilever and tip February 24, 2009
A method is disclosed for forming a single crystal cantilever and tip on a substrate. The method can include the operation of defining an implant area on the substrate with a layer of photoresist. A further operation can be implanting oxygen into the substrate in the implant area to a
7460293 Display system December 2, 2008
One embodiment of a display system includes a first array that defines multiple reflective devices each movable between an inactive position to reflect light to a light dump and an active position to reflect light to an imaging region, a second array that defines multiple reflective
7413412 Vacuum micropump and gauge August 19, 2008
A vacuum micropump for use in a sealed package includes at least one pumping cell and a magnetic field proximate to the pumping cell. The pumping cell has at least one anode, at least one dielectric in contact with the at least one anode, at least one titanium cathode in contact with
7375012 Method of forming multilayer film May 20, 2008
This disclosure describes system(s) and/or method(s) enabling contacts for individual nanometer-scale-thickness layers of a multilayer film.
7313945 Cantilevers for sensing fluid properties January 1, 2008
A system for sensing a property of a fluid comprises a fluid channel operable to receive the fluid therein, a flexible arm having a free end positioned within at least a portion of the fluid channel, a fluid actuator disposed sufficiently close to the flexible arm such that actuation
7170666 Nanostructure antireflection surfaces January 30, 2007
An antireflection surface formed using a plurality of nanostructures of a first material on a surface of a second material. The first material is different from the second material. The distribution of spatial periods of the nanostructures is set by a self-assembly operation. The surface
7158281 MEMs device with feedback control January 2, 2007
A MEMS device includes at least one movable member and an active device having at least one property affected by the location of the movable member with respect to the active device. A control circuit is used to limit movement of the movable member based on observation of the property
7151883 Photonic crystal device and methods December 19, 2006
A photonic crystal device is fabricated by a method comprising steps of providing a substrate, providing a photonic crystal on the substrate, and etching a cavity under at least the photonic crystal, the cavity having an inner wall adapted to reflect light.
7148621 Integrated focusing emitter December 12, 2006
A method for creating an electron lens includes the steps of applying a polymer layer on an emitter surface of an electron emitter and then curing the polymer layer to reduce volatile content.
7112296 Method for making thin fuel cell electrolyte September 26, 2006
An electrolyte has a core and at least one projection extending from the core. The core is supported on a substrate, and the at least one projection is separated from the substrate.
7078855 Dielectric light device July 18, 2006
A light device includes an electron supply defining an emitter surface. A dielectric tunneling layer is disposed between the electron supply and a cathode layer. The cathode layer has at least partial photon transparency that is substantially uniform across the emitter surface.
7061660 MEMs device with feedback control June 13, 2006
A MEMS device includes at least one movable member and an active device having at least one property affected by the location of the movable member with respect to the active device. A control circuit is used to limit movement of the movable member based on observation of the property
7049158 Method of manufacturing an emitter May 23, 2006
A method is disclosed for creating an emitter having a flat cathode emission surface: First a protective layer that is conductive is formed on the flat cathode emission surface. Then an electronic lens structure is created over the protective layer. Finally, the protective layer is e
7045958 Vacuum device having a getter May 16, 2006
A vacuum device, including a substrate and a support structure having a support perimeter, where the support structure is disposed over the substrate. In addition, the vacuum device also includes a non-evaporable getter layer having an exposed surface area. The non-evaporable getter
7044823 Method of making a tunneling emitter May 16, 2006
An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed on the tunneling
6988924 Method of making a getter structure January 24, 2006
A method of manufacturing a getter structure, including forming a support structure having a support perimeter, where the support structure is disposed over a substrate. In addition, the method includes forming a non-evaporable getter layer having an exposed surface area, where the n
6933517 Tunneling emitters August 23, 2005
An emitter includes an electron supply and a tunneling layer disposed on the electron supply. A cathode layer is disposed on the tunneling layer. A conductive electrode has multiple layers of conductive material. The multiple layers include a protective layer disposed on the cathode laye
6911768 Tunneling emitter with nanohole openings June 28, 2005
An emitter has an electron supply and a porous cathode layer having nanohole openings. The emitter also has a tunneling layer disposed between the electron supply and the cathode layer.
6882100 Dielectric light device April 19, 2005
A light device includes an electron supply defining an emitter surface. A dielectric tunneling layer is disposed between the electron supply and a cathode layer. The cathode layer has at least partial photon transparency that is substantially uniform across the emitter surface.
6852554 Emission layer formed by rapid thermal formation process February 8, 2005
An emitter has a rapid thermal process (RTP) formed emission layer of SiO.sub.2, SiO.sub.x N.sub.y or combinations thereof. The emission layer formed by rapid thermal processing does not require electroforming to stabilize the film. The RTP grown films are stable and exhibit uniform
6806488 Tunneling emitters and method of making October 19, 2004
An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed on the tunneling
6781146 Annealed tunneling emitter August 24, 2004
An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the tunneling layer is formed. A cathode layer is formed on the tunneling layer t
6758711 Integrated focusing emitter July 6, 2004
A method for creating an electron lens includes the steps of applying a polymer layer on an emitter surface of an electron emitter and then curing the polymer layer to reduce volatile content.
6703252 Method of manufacturing an emitter March 9, 2004
A method is disclosed for creating an emitter having a flat cathode emission surface: First a protective layer that is conductive is formed on the flat cathode emission surface. Then an electronic lens structure is created over the protective layer. Finally, the protective layer is etche
6558968 Method of making an emitter with variable density photoresist layer May 6, 2003
An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed on the tunneling










 
 
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