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Inventor:
Quick; Timothy A.
Address:
Boise, ID
No. of patents:
26
Patents:












Patent Number Title Of Patent Date Issued
8298938 Phase change memory cell structures and methods October 30, 2012
Phase change memory cell structures and methods are described herein. A number of methods of forming a phase change memory cell structure include forming a dielectric stack structure on a first electrode, wherein forming the dielectric stack structure includes creating a second region
8252119 Microelectronic substrate cleaning systems with polyelectrolyte and associated methods August 28, 2012
Several embodiments of cleaning systems using polyelectrolyte and various associated methods for cleaning microelectronic substrates are disclosed herein. One embodiment is directed to a system that has a substrate support for holding the microelectronic substrate, a dispenser positioned
8198129 Methods of depositing antimony-comprising phase change material onto a substrate and methods of June 12, 2012
A method of depositing an antimony-comprising phase change material onto a substrate includes providing a reducing agent and vaporized Sb(OR).sub.3 to a substrate, where R is alkyl, and forming there-from antimony-comprising phase change material on the substrate. The phase change ma
8188464 Atomic layer deposition systems and methods including metal beta-diketiminate compounds May 29, 2012
The present invention provides atomic layer deposition systems and methods that include metal compounds with at least one .beta.-diketiminate ligand. Such systems and methods can be useful for depositing metal-containing layers on substrates.
8163341 Methods of forming metal-containing structures, and methods of forming germanium-containing stru April 24, 2012
Some embodiments include methods of forming metal-containing structures. A first metal-containing material may be formed over a substrate. After the first metal-containing material is formed, and while the substrate is within a reaction chamber, hydrogen-containing reactant may be used t
8124445 Confined resistance variable memory cell structures and methods February 28, 2012
Confined resistance variable memory cell structures and methods are described herein. One or more methods of forming a confined resistance variable memory cell structure includes forming a via in a memory cell structure and forming a resistance variable material in the via by perform
8114219 Systems and methods for forming metal oxide layers February 14, 2012
A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.
8097537 Phase change memory cell structures and methods January 17, 2012
Phase change memory cell structures and methods are described herein. A number of methods of forming a phase change memory cell structure include forming a dielectric stack structure on a first electrode, wherein forming the dielectric stack structure includes creating a second region
8097175 Method for selectively permeating a self-assembled block copolymer, method for forming metal oxi January 17, 2012
Methods of forming metal oxide structures and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for self-assembly. The metal oxide structures and patterns may be used, for example, as a mask for sublithographic patterning during various
8017184 .beta.-diketiminate ligand sources and metal-containing compounds thereof, and systems and metho September 13, 2011
The present invention provides metal-containing compounds that include at least one .beta.-diketiminate ligand, and methods of making and using the same. In certain embodiments, the metal-containing compounds include at least one .beta.-diketiminate ligand with at least one fluorine-
8003521 Semiconductor processing August 23, 2011
Devices, methods, and systems for semiconductor processing are described herein. A number of method embodiments of semiconductor processing can include forming a silicon layer on a structure, forming an opening through the silicon layer and into the structure, and selectively forming
7858815 Systems and methods for forming tantalum oxide layers and tantalum precursor compounds December 28, 2010
A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum precursor compound that includes alkoxide ligands, for example.
7858523 Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and metho December 28, 2010
The present invention provides metal-containing compounds that include at least one .beta.-diketiminate ligand, and methods of making and using the same. In some embodiments, the metal-containing compounds are homoleptic complexes that include unsymmetrical .beta.-diketiminate ligands. I
7709399 Atomic layer deposition systems and methods including metal .beta.-diketiminate compounds May 4, 2010
The present invention provides atomic layer deposition systems and methods that include metal compounds with at least one .beta.-diketiminate ligand. Such systems and methods can be useful for depositing metal-containing layers on substrates.
7678708 Systems and methods for forming metal oxide layers March 16, 2010
A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.
7666801 Systems and methods for forming metal oxides using metal compounds containing aminosilane ligand February 23, 2010
A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include aminosilane ligands.
7572731 Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and metho August 11, 2009
The present invention provides metal-containing compounds that include at least one .beta.-diketiminate ligand, and methods of making and using the same. In some embodiments, the metal-containing compounds are homoleptic complexes that include unsymmetrical .beta.-diketiminate ligands. I
7482284 Deposition methods for forming silicon oxide layers January 27, 2009
A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.
7439338 Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods October 21, 2008
The present invention provides metal-containing compounds that include at least one .beta.-diketiminate ligand, and methods of making and using the same. In certain embodiments, the metal-containing compounds include at least one .beta.-diketiminate ligand with at least one fluorine-
7439195 Systems and methods for forming metal oxides using metal compounds containing aminosilane ligand October 21, 2008
A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include aminosilane ligands.
7416994 Atomic layer deposition systems and methods including metal beta-diketiminate compounds August 26, 2008
The present invention provides atomic layer deposition systems and methods that include metal compounds with at least one .beta.-diketiminate ligand. Such systems and methods can be useful for depositing metal-containing layers on substrates.
7368402 Systems and methods for forming tantalum oxide layers and tantalum precursor compounds May 6, 2008
A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum precursor compound that includes alkoxide ligands, for example.
7332442 Systems and methods for forming metal oxide layers February 19, 2008
A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.
7115528 Systems and method for forming silicon oxide layers October 3, 2006
A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.
7087481 Systems and methods for forming metal oxides using metal compounds containing aminosilane ligand August 8, 2006
A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include aminosilane ligands.
7030042 Systems and methods for forming tantalum oxide layers and tantalum precursor compounds April 18, 2006
A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum precursor compound that includes alkoxide ligands, for example.










 
 
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