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Qian; Peixin
Beijing, CH
No. of patents:

Patent Number Title Of Patent Date Issued
6252260 Electrode structure of hetero-junction intertal photo-emission inreared detector June 26, 2001
An electrode structure of an HIP infrared detector. A HIP infrared comprises a p-type silicon substrate which has an exposed guard ring, an exposed region of the silicon substrate encompassed by the guard ring, and a silicon oxide layer covering a part of the guard ring and the silicon

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