Resources Contact Us Home
Qian; Peixin
Beijing, CH
No. of patents:

Patent Number Title Of Patent Date Issued
6252260 Electrode structure of hetero-junction intertal photo-emission inreared detector June 26, 2001
An electrode structure of an HIP infrared detector. A HIP infrared comprises a p-type silicon substrate which has an exposed guard ring, an exposed region of the silicon substrate encompassed by the guard ring, and a silicon oxide layer covering a part of the guard ring and the silicon

  Recently Added Patents
Compact multi-functional scanning apparatus with retractable flatbed scanner
Rim for a TV receiver
Phase noise extraction apparatus and technique
Dynamic data filtering system and method
Water bottle warning triangle
Techniques for determining optimized local repair paths
Heterocyclic compounds as CCR2B antagonists
  Randomly Featured Patents
Digital architecture using one-time programmable (OTP) memory
Circuits that use a postamble signal to determine phase and frequency errors in the acquisition of a preamble signal
Method of making electroluminescent phosphor using sonochemistry
Capacitor for a semiconductor device and method for forming the same
Hydrosilation reaction utilizing a free radical photoinitiator
Method for universally testing semiconductor devices with different pin arrangement
Method of reducing the visual impact of defects present in a spatial light modulator display
Micromechanical component with different doping types so that one type is anodized into porous silicon
Heat exchanger with reinforcement means
Charged-particle-beam microlithography apparatus and methods exhibiting variable beam velocity, and device-manufacturing methods using same