| Patent Number |
Title Of Patent |
Date Issued |
| 6139483 |
Method of forming lateral resonant tunneling devices |
October 31, 2000 |
| A method of fabricating a quantum well device is presented which includes forming one or more quantum wells 48 by forming an epitaxy mask followed by selective deposition of one or more epitaxial layers. Selective deposition is accomplished by forming an epitaxy mask by sidewall defined |
| 5952059 |
Forming a piezoelectric layer with improved texture |
September 14, 1999 |
| A method is provided for forming a piezoelectric layer with improved texture. In the method, a metallic material is evaporated. A noble gas is combined with a reactant gas. An atomic reactant gas flow is generated from the combined gas using a plasma source. The atomic reactant gas flow |
| 5935641 |
Method of forming a piezoelectric layer with improved texture |
August 10, 1999 |
| A method is provided for forming a piezoelectric layer with improved texture. In the method, a seed material is deposited on a substrate (12) at a low deposition rate to form a seed layer (16). The low deposition rate may be a rate in the range of 10.0-150 nanometers per hour. A piez |
| 5556462 |
Growth method by repeatedly measuring flux in MBE chamber |
September 17, 1996 |
| Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of integrated mass spectormeter (204) signals. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tunneling diodes. |
| 5399521 |
Method of semiconductor layer growth by MBE |
March 21, 1995 |
| Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of integrated mass spectormeter (204) signals. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tunneling diodes. |
| 5175019 |
Method for depositing a thin film |
December 29, 1992 |
| A microwave plasma rector is disclosed comprising a vacuum chamber, a microwave generator for generating a microwave standing wave therein, inlet and outlet ports, a susceptor within the chamber, at least one dielectric plate and a heater for heating the susceptor. The dielectric pla |
| 5170329 |
Stress free chip mount and method of manufacture |
December 8, 1992 |
| A chip mount is provided for mounting a chip on a circuit board to reduce stresses caused by thermal expansion mismatch between the chip and the circuit board. The chip mount includes a strip member secured to the chip and a guide layer secured to the circuit board. The guide layer inclu |
| 5114696 |
Diamond growth method |
May 19, 1992 |
| Preferred embodiments grow a first diamondlike film (114) on a silicon substrate (102). Diamond film (116) is then grown on diamondlike film (114), the diamondlike film (114) providing a high density of nucleation sites (108) for the diamond film (116). Diamond film growth is interrupted |
| 5082522 |
Method for forming patterned diamond thin films |
January 21, 1992 |
| Preferred embodiments mask select regions of a circuit surface (141) prior to abrading the surface with diamond particles to form nucleation sites (200). The mask (150) is then removed prior to forming a diamond layer (160). Diamond layer (160) grows on the surface except in those region |
| 5006203 |
Diamond growth method |
April 9, 1991 |
| Preferred embodiments first adjust reactor conditions to grow a diamondlike film (114) on a silicon substrate (102). Reactor conditions are then adjusted to etch the diamondlike film surface, providing a high density of diamond nucleation sites (108). Finally, the reactor conditions are |
| 4878989 |
Chemical beam epitaxy system |
November 7, 1989 |
| Preferred embodiments include a chemical beam epitaxy system (30) with cells for Group III compounds (44) and Group V compounds (40) for epitaxial growth of III-V semiconductor materials on a substrate (38) together with an atomic hydrogen cell (42) for scavenging carbonaceous residu |
| 4830984 |
Method for heteroepitaxial growth using tensioning layer on rear substrate surface |
May 16, 1989 |
| A method, and products formed by such method, of providing a substantially planar surface to a layer of semiconducting material (24) formed on a first surface of a substrate (20), the substrate having a second surface opposite the first surface. The method comprising forming a layer (22) |
| 4699085 |
Chemical beam epitaxy system |
October 13, 1987 |
| A chemical beam epitaxy system including a cylindrical vacuum chamber (32) with wafer heaters (42) affixed about the cylindrical wall, a rotatable wafer holder ring (40) with mounted wafer holders (38) adjacent the wafer heaters (42), and a central rotatble set of gas cells (44) for dire |
| 4681653 |
Planarized dielectric deposited using plasma enhanced chemical vapor deposition |
July 21, 1987 |
| Deposition in an RIE type plasma reactor of interlevel oxide at high power and low pressure yielding a topography similar to reflowed PSG is disclosed. Deposition rates and film purity are limited by purity and the rate of flow of reactant gases through the plasma reactor and not by the |
| 4521275 |
Plasma etch chemistry for anisotropic etching of silicon |
June 4, 1985 |
| A plasma etch chemistry which allows a near perfectly vertical etch of silicon is disclosed. A Cl-containing compound such as BCl.sub.3 has Br.sub.2 added to it, readily allowing anisotropic etching of silicon. This is due to the low volatility of SiBr.sub.4. The silicon surface faci |
| 4513021 |
Plasma reactor with reduced chamber wall deposition |
April 23, 1985 |
| A plasma reactor wherein material deposition on the sidewall is substantially prevented. In a radial flow reactor, wherein the reagent gases are injected at periphery of an annular substrate holder and exhausted near the center of the holder, a second gas flow of diluent gases is pro |
| 4512283 |
Plasma reactor sidewall shield |
April 23, 1985 |
| In a radial flow plasma reactor, where reagent gas is introduced into the reaction chamber of the plasma reactor via a gas distribution ring located on the perimeter of a heated substrate holder while diluent gas is introduced into the chamber via the holes in an annular diluent gas memb |
| 4450042 |
Plasma etch chemistry for anisotropic etching of silicon |
May 22, 1984 |
| A plasma etch chemistry which allows a near perfectly vertical etch of silicon is disclosed. A Cl-containing compound such as BCl.sub.3 has Br.sub.2 added to it, readily allowing anisotropic etching of silicon. This is due to the low volatility of SiBr.sub.4. The silicon surface faci |
