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Inventor: Priefert; Dirk
Address: Moers, DE
No. of patents: 2
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 7554157 |
Lateral SOI component having a reduced on resistance |
June 30, 2009 |
| An SOI semiconductor component comprises a semiconductor substrate having a basic doping, a dielectric layer arranged on the semiconductor substrate, and a semiconductor layer arranged on the dielectric layer. The semiconductor layer includes a drift zone of a first conduction type, |
| 6693327 |
Lateral semiconductor component in thin-film SOI technology |
February 17, 2004 |
| A lateral semiconductor element (10) in thin-film SOI technology comprises an insulator layer (14) which rests on a substrate (12) and is buried under a thin silicon film (16), on top of which the source, or anode, contact (18) and the drain, or cathode, contact (22) are mounted. The |
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