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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Pinarbasi; Mustafa
Address:
Morgan Hill, CA
No. of patents:
103
Patents:


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Patent Number Title Of Patent Date Issued
8207012 Method and apparatus for achieving low resistance contact to a metal based thin film solar cell June 26, 2012
A system and method of forming a thin film solar cell with a metallic foil substrate are provided. After forming a semiconductor absorber film over the front surface of the metallic foil substrate a back surface of the metallic foil substrate is treated using a material removal process
8153469 Reaction methods to form group IBIIIAVIA thin film solar cell absorbers April 10, 2012
The present invention provides a method to form Group IBIIIAVIA solar cell absorber layers on continuous flexible substrates. In a preferred aspect, the method forms a Group IBIIIAVIA absorber layer for manufacturing photovoltaic cells by providing a workpiece having a precursor laye
8088224 Roll-to-roll evaporation system and method to manufacture group IBIIAVIA photovoltaics January 3, 2012
The present inventions provide method and apparatus that employ constituents vaporized from one or more constituent supply source or sources to form one or more films of a precursor layer formed on a surface of a continuous flexible workpiece. Of particular significance is the implem
7837837 Magnetic head having high conductivity lead structures seeded by epitaxially matched seed layer November 23, 2010
The present invention is directed towards increasing the conductivity of the electrical lead material in the read head portion of a magnetic head, such that thinner electrical leads can be fabricated while the current carrying capacity of the leads is maintained. This increase in electri
7824947 Method to improve flexible foil substrate for thin film solar cell applications November 2, 2010
A thin film solar cell including a Group IBIIIAVIA absorber layer on a defect free base including a stainless steel substrate is provided. The stainless steel substrate of the base is surface treated to remove the surface roughness such as protrusions that cause shunts. Before removing
7362543 Magnetoresistive/inductive write head assembly formed with seed layers having a uniform thicknes April 22, 2008
The present invention presents a method for fabricating coil elements for magnetic write heads. A coil pattern is formed on a substrate using photolithographic techniques. The substrate is etched using reactive ion etching, creating a coil-shaped trench in the substrate. Thin film seed
7327538 Lead overlay sensor with improved current path February 5, 2008
In a lead overlay (LOL) type of read head first and second insulation layers are employed with the first insulation layer being located between a top surface of a first hard bias layer and a first lead layer and the second insulation layer is located between the top surface of a second
7283334 Method for fabricating seed layer for spin valve sensor for magnetic heads for hard disk drives October 16, 2007
A magnetic head having a spin valve sensor that is fabricated utilizing an Al.sub.2O.sub.3, NiMnO, NiFeCr seed layer upon which a typical PtMn spin valve sensor layer structure is subsequently fabricated. The preferred embodiment fabrication process of the NiFeCr layer includes the o
7244341 Method to achieve low and stable ferromagnetic coupling field July 17, 2007
A method for making a spin valve includes providing a substrate; depositing a first ferromagnetic layer having a first surface on the substrate; depositing a spacer layer having a second surface; depositing a second ferromagnetic layer, wherein the spacer layer is disposed between th
7228618 Method for fabricating a magnetic head June 12, 2007
A magnetic head having a spin valve sensor that is fabricated utilizing an Al.sub.2O.sub.3, NiMn0, Si seed layer upon which a PtMn spin valve sensor layer structure is subsequently fabricated. In the preferred embodiment, the Si layer has a thickness of approximately 20 .ANG. and the PtM
7224556 Self-pinned CPP magnetoresistive sensor May 29, 2007
A charge-perpendicular-to-plane self-pinned magnetic tunnel junction sensor is provided. Additionally, a disk drive using a charge-perpendicular-to-plane self-pinned magnetic tunnel junction sensor as the read element is provided.
7200919 Method of fabricating a magnetic transducer with multilayer conductive leads including a tantalu April 10, 2007
A method of fabricating a magnetic transducer (head) according to the invention includes forming multilayered electrically conductive leads for the magnetic sensor which include a thin tantalum seed layer followed by a thin chromium seed layer which is followed by a thicker rhodium layer
7149062 Spin valve structure with Si seed layer and reduced PtMn antiferromagnetic layer thickness December 12, 2006
A magnetic head having a spin valve sensor that is fabricated utilizing an Al.sub.2O.sub.3, NiMn0, Si seed layer upon which a PtMn spin valve sensor layer structure is subsequently fabricated. In the preferred embodiment, the Si layer has a thickness of approximately 20 .ANG. and the PtM
7136264 Use of gold leads in lead overlaid type of GMR sensor November 14, 2006
A magnetic head including a lead overlaid read head component in which the electrical current passing through the overlaid passive regions of the sensor layers is reduced. The parts of the electrical leads that overlay the sensor layers are comprised of gold. The exceptional electrical
7116526 Lead overlay sensor with improved current path October 3, 2006
In a lead overlay (LOL) type of read head first and second insulation layers are employed with the first insulation layer being located between a top surface of a first hard bias layer and a first lead layer and the second insulation layer is located between the top surface of a second
7092219 Method for fabricating seed layer for spin valve sensor for magnetic heads for hard disk drives August 15, 2006
A magnetic head having a spin valve sensor that is fabricated utilizing an Al.sub.2O.sub.3, NiMnO, NiFeCr seed layer upon which a typical PtMn spin valve sensor layer structure is subsequently fabricated. The preferred embodiment fabrication process of the NiFeCr layer includes the o
7082017 High magnetoresistance spin valve sensor with self-pinned antiparallel (AP) pinned layer structu July 25, 2006
A spin valve sensor includes a spacer layer which is located between a free layer and an antiparallel (AP) pinned layer structure wherein the AP pinned layer structure includes an antiparallel coupling layer which is located between and interfaces first and second AP pinned layers with t
7070697 Methods of making a read sensor with use of a barrier structure for depositing materials July 4, 2006
In one illustrative example, a method of making a read sensor of a magnetic head involves forming a barrier structure which surrounds a central mask formed over a plurality of read sensor layers; etching the read sensor layers to form the read sensor below the mask; and depositing, w
7064938 Spin valve sensor with a nitrogen sputtered free layer June 20, 2006
A method makes a spin valve sensor of a magnetic read head which includes the steps of forming a ferromagnetic pinned layer structure that has a magnetic moment, forming a pinning layer exchange coupled to the pinned layer structure for pinning the magnetic moment of the pinned layer
7061729 Protective cap in lead overlay magnetic sensors June 13, 2006
A lead overlay magnetic sensor for use in a disk drive is provided having a protective cap layer disposed between the electrical leads and the sensor. The protective cap layer is preferably formed from ruthenium, rhodium, or other suitable material. The sensors thus formed have low r
7038889 Method and apparatus for enhanced dual spin valve giant magnetoresistance effects having second May 2, 2006
A dual spin valve giant magnetoresistance (GMR) sensor having two spin valves with the second spin valve being self-biased is disclosed herein. According to the present invention a dual spin valve system is disclosed wherein the first of the two spin valves in the dual spin valve element
7009822 AMR Sensor with a soft adjacent layer having high magnetization, high resistivity, low intrinsic March 7, 2006
A high magnetization, high resistivity, low corrosion and near zero magnetostriction soft adjacent layer (SAL) is provided for a magnetoresistive (MR) sensor of a read head. The MR sensor may either be an anisotropic MR (AMR) sensor or a spin valve sensor. In both sensors the SAL is
6996894 Methods of making magnetic heads with improved contiguous junctions February 14, 2006
Methods of making a read head with improved contiguous junctions are described. After sensor layer materials are deposited over a substrate, a lift-off mask is formed over the sensor layer materials in a central region which is surrounded by end regions. Ion milling is performed with
6980404 Method and apparatus for improving soft magnetic properties of a spin valve while retaining high December 27, 2005
A giant magnetoresistance (GMR) head for magnetic storage systems, the GMR head having a free layer with improved soft magnetic properties while retaining giant magnetoresistance (GMR) effects. The free layer comprises an alloy comprising Co.sub.x, Fe.sub.y, and Cu.sub.z, wherein x, y, a
6948231 Method of depositing material into high aspect ratio features September 27, 2005
The present invention presents a method for fabricating coil elements for magnetic write heads. A coil pattern is formed on a substrate using photolithographic techniques. The substrate is etched using reactive ion etching, creating a coil-shaped trench in the substrate. Thin film seed
6907655 Method for manufacturing a spin valve having an enhanced free layer June 21, 2005
A spin valve sensor is provided with a negative ferromagnetic coupling field -H.sub.FC for properly biasing a free layer and a spin filter layer is employed between the free layer and a capping layer for increasing the magnetoresistive coefficient dr/R of the spin valve sensor. A top por
6891704 Tunnel junction sensor with a smooth interface between a pinned or free layer and a barrier laye May 10, 2005
A method of making provides a smooth surface of a pinned or free layer interfacing a barrier layer in a tunnel junction sensor wherein the smooth surface is an oxidized monolayer of the pinned or free layer. After sputter depositing the pinned or free layer the layer is subjected to an
6878240 Apparatus and method for obtaining symmetrical junctions between a read sensor and hard bias lay April 12, 2005
A sputtering system is provided with a substrate and a sputtering material layer that are located in a sputtering chamber. The sputtering material layer has a sputtering surface where atoms of the material are sputtered and the substrate has a forming surface with a site where atoms of t
6865062 Spin valve sensor with exchange biased free layer and antiparallel (AP) pinned layer pinned with March 8, 2005
A spin valve sensor includes an antiparallel (AP) pinned layer structure which is self-pinned without the assistance of an antiferromagnetic (AFM) pinning layer. A free layer of the spin valve sensor has first and second wing portions which extend laterally beyond a track width of the sp
6861177 Method of forming a read sensor using a lift-off mask having a hardmask layer and a release laye March 1, 2005
A method of forming a read sensor that has a very narrow track width is disclosed. The method involves forming a thin lift-off mask over a central region of a sensor layer, which is subsequently ion-milled and deposited with hard bias and lead layers. The thin lift-off mask is made by fo
6859348 Hard biased self-pinned spin valve sensor with recessed overlaid leads February 22, 2005
A spin valve sensor has an antiparallel (AP) pinned layer structure which has ferromagnetic first and second AP pinned layers that are separated by an antiparallel coupling layer. The first and second AP pinned layers are self-pinned antiparallel with respect to one another without the
6856493 Spin valve sensor with in-stack biased free layer and antiparallel (AP) pinned layer pinned with February 15, 2005
A spin valve sensor has an antiparallel (AP) pinned layer structure which has ferromagnetic first and second AP pinned layers that are separated by an antiparallel coupling layer. The first and second AP pinned layers are self-pinned antiparallel with respect to one another without the
6853519 Magnetic head having high conductivity lead structures seeded by epitaxially matched seed layer February 8, 2005
The present invention is directed towards increasing the conductivity of the electrical lead material in the read head portion of a magnetic head, such that thinner electrical leads can be fabricated while the current carrying capacity of the leads is maintained. This increase in electri
6826021 Spin valve sensor having ultra-thin freelayers including nickel-iron, ruthenium, and a cobalt-ir November 30, 2004
A spin valve (SV) sensor has a cap layer made of tantalum; a copper layer formed beneath the cap layer; and a unique freelayer structure. The freelayer structure includes a first layer made of nickel-iron, a second layer made of ruthenium, a third layer made of nickel-iron, a nanolayer
6820322 Method of making a spin valve sensor with a free layer structure sputter deposited in a nitrogen November 23, 2004
A method makes a spin valve sensor of a magnetic read head which includes the steps of forming a ferromagnetic pinned layer structure that has a magnetic moment, forming a pinning layer exchange coupled to the pinned layer structure for pinning the magnetic moment of the pinned layer
6813121 Magnetic transducer with multilayer conductive leads including a tantalum layer, a chromium laye November 2, 2004
A magnetic transducer (head) according to the invention includes multilayered electrically conductive leads from the magnetic sensor which include a thin tantalum seed layer followed by a thin chromium seed layer which is followed by a thicker rhodium layer. The dual seed layer of the
6785103 Magnetoresistance sensor with reduced side reading August 31, 2004
A magnetoresistance sensor includes a substrate and a sensor structure deposited upon the substrate and having a first lateral side and a second lateral side. The sensor structure includes a layered transverse biasing structure, a free layer deposited upon the layered transverse biasing
6785102 Spin valve sensor with dual self-pinned AP pinned layer structures August 31, 2004
A spin valve sensor includes a free layer structure which is located between first and second spacer layers and the first and second spacer layers are located between first and second AP pinned layer structures. Each of the AP pinned layer structures has first and second AP pinned la
6785101 Overlaid lead giant magnetoresistive head with side reading reduction August 31, 2004
The first and second side surfaces of either a bottom spin valve sensor or a top spin valve sensor are notched so as to enable a reduction in the magnetoresistive coefficient of side portions of the sensor beyond the track width region thereby minimizing side reading by the sensor. The
6783635 Spin valve sensor free layer structure with a cobalt based layer that promotes magnetic stabilit August 31, 2004
A method of making a nickel iron (NiFe) layer and a cobalt or cobalt based layer of a free layer structure forms the cobalt or cobalt based layer by oblique ion beam sputter deposition with the cobalt or cobalt based layer located between the nickel iron (NiFe) layer and a copper (Cu) sp
6751844 Method of making a spin valve sensor with stable antiparallel pinned layer structure exchange co June 22, 2004
A spin valve sensor has a pinned layer structure that has a net positive stress induced uniaxial anisotropy that promotes a pinning of the pinned layer structure in a pinned direction for stabilizing the pinning of the pinned layer structure at high temperatures near to a blocking temper
6751072 High magnetoresistance spin valve sensor with self-pinned antiparallel (AP) pinned layer structu June 15, 2004
A spin valve sensor includes a spacer layer which is located between a free layer and an antiparallel (AP) pinned layer structure wherein the AP pinned layer structure includes an antiparallel coupling layer which is located between and interfaces first and second AP pinned layers with t
6744607 Exchange biased self-pinned spin valve sensor with recessed overlaid leads June 1, 2004
A spin valve sensor includes an antiparallel (AP) pinned layer structure which is self-pinned without the assistance of an antiferromagnetic (AFM) pinning layer. A free layer of the spin valve sensor has first and second wing portions which extend laterally beyond a track width of the sp
6741432 Current perpendicular to the planes (CPP) spin valve sensor with in-stack biased free layer and May 25, 2004
A spin valve sensor has an antiparallel (AP) pinned layer structure which has ferromagnetic first and second AP pinned layers that are separated by an antiparallel coupling layer. The first and second AP pinned layers are self-pinned antiparallel with respect to one another without the
6735061 Read head sensor with a reactively sputtered pinning layer structure May 11, 2004
A pinning layer structure is provided for a spin valve sensor of a read head which has a reactively deposited nickel oxide first film which underlies a reactively sputter deposited second film of iron oxide (Fe.sub.2 O.sub.3) or (Fe.sub.3 O.sub.4). In the preferred embodiment the pin
6728083 Method of making a spin valve sensor with a controlled ferromagnetic coupling field April 27, 2004
A pinned layer structure of a spin valve sensor is formed by sputter deposition of cobalt iron (CoFe) in a nitrogen (N.sub.2) atmosphere. This method permits a wider range of deposition times of a copper spacer layer to achieve a desirable ferromagnetic coupling field (H.sub.F) between t
6700757 Enhanced free layer for a spin valve sensor March 2, 2004
A spin valve sensor is provided with a negative ferromagnetic coupling field -H.sub.FC for properly biasing a free layer and a spin filter layer is employed between the free layer and a capping layer for increasing the magnetoresistive coefficient dr/R of the spin valve sensor. A top por
6700755 Spin valve sensor with modified magnetostriction March 2, 2004
A spin valve sensor has a pinned layer structure which includes first, second and third pinned films wherein the first pinned film is nickel iron and is located between the second and third pinned films which are cobalt iron. This structure significantly reduces the magnetostriction of t
6662432 Method of making a free layer for a spin valve sensor with a lower uniaxial anisotropy field December 16, 2003
A free layer for a spin valve sensor includes a cobalt iron (CoFe) film which has an easy axis oriented perpendicular to an air bearing surface (ABS) of a read head and a nickel iron (NiFe) film which has an easy axis oriented parallel to the ABS and parallel to the major planes of the t
6661622 Method to achieve low and stable ferromagnetic coupling field December 9, 2003
A method for making spin valves with low and stable coupling field includes the oxygen exposure steps. In this method, a first ferromagnetic layer is deposited onto a substrate using an ion beam sputtering process. The first surface of the first ferromagnetic layer is exposed to an oxyge
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