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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Pecen; Jiri
Address:
Palo Alto, CA
No. of patents:
10
Patents:












Patent Number Title Of Patent Date Issued
6621584 Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing September 16, 2003
An apparatus and method for in-situ monitoring of thickness during chemical-mechanical polishing (CMP) of a substrate using a polishing tool and a film thickness monitor. The tool has an opening placed in it. The opening contains a monitoring window secured in it to create a monitoring
6261155 Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical p July 17, 2001
A linear polishing belt for use in chemical-mechanical polishing (CMP) of a substrate comprises an opening and a flexible monitoring window secured to the belt to close the opening and to create a monitoring channel in the belt. A plurality of monitoring channels can also be used. A film
6254459 Wafer polishing device with movable window July 3, 2001
A wafer polishing device with movable window can be used for in-situ monitoring of a wafer during CMP processing. During most of the CMP operation, the window remains below a polishing surface of a polishing device to protect the window from the deleterious effects of the polishing p
6146248 Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical p November 14, 2000
A linear polishing belt for use in chemical-mechanical polishing (CMP) of a substrate comprises an opening and a flexible monitoring window secured to the belt to close the opening and to create a monitoring channel in the belt. A plurality of monitoring channels can also be used. A film
6111634 Method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer d August 29, 2000
A method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical mechanical polishing (CMP) of a substrate using a polishing tool and a film thickness monitor. The tool has an opening placed in it. The opening contains a monitoring window
6108091 Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing August 22, 2000
An apparatus and method for in-situ monitoring of thickness during chemical-mechanical polishing (CMP) of a substrate using a polishing tool and a film thickness monitor. The tool has an opening placed in it. The opening contains a monitoring window secured in it to create a monitoring
6068539 Wafer polishing device with movable window May 30, 2000
A wafer polishing device with movable window can be used for in-situ monitoring of a wafer during CMP processing. During most of the CMP operation, the window remains below a polishing surface of a polishing device to protect the window from the deleterious effects of the polishing p
5083035 Position location in surface scanning using interval timing between scan marks on test wafers January 21, 1992
A particle imager and method for imaging particles on surfaces of substrates. A surface is raster scanned by a collimated light beam and particles on the surface are detected by the scattered light caused by the particles. During a scan path the intensity of the scattered light is me
4766324 Particle detection method including comparison between sequential scans August 23, 1988
A particle detection method for matching particles detected in two scans of a surface taken at different times in which particles having a light scattering intensity above a collection threshold are first detected and the measured position and scattering intensity therefor stored in a
4641967 Particle position correlator and correlation method for a surface scanner February 10, 1987
A method and apparatus for particle detection and position correlation that fuses separate detections of the same particle on adjacent scan lines into one. A first scan line on a surface is scanned with a laser beam and the scattered light detected. The detection generates address and am










 
 
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