| Patent Number |
Title Of Patent |
Date Issued |
| 6621584 |
Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing |
September 16, 2003 |
| An apparatus and method for in-situ monitoring of thickness during chemical-mechanical polishing (CMP) of a substrate using a polishing tool and a film thickness monitor. The tool has an opening placed in it. The opening contains a monitoring window secured in it to create a monitoring |
| 6261155 |
Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical p |
July 17, 2001 |
| A linear polishing belt for use in chemical-mechanical polishing (CMP) of a substrate comprises an opening and a flexible monitoring window secured to the belt to close the opening and to create a monitoring channel in the belt. A plurality of monitoring channels can also be used. A film |
| 6254459 |
Wafer polishing device with movable window |
July 3, 2001 |
| A wafer polishing device with movable window can be used for in-situ monitoring of a wafer during CMP processing. During most of the CMP operation, the window remains below a polishing surface of a polishing device to protect the window from the deleterious effects of the polishing p |
| 6146248 |
Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical p |
November 14, 2000 |
| A linear polishing belt for use in chemical-mechanical polishing (CMP) of a substrate comprises an opening and a flexible monitoring window secured to the belt to close the opening and to create a monitoring channel in the belt. A plurality of monitoring channels can also be used. A film |
| 6111634 |
Method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer d |
August 29, 2000 |
| A method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical mechanical polishing (CMP) of a substrate using a polishing tool and a film thickness monitor. The tool has an opening placed in it. The opening contains a monitoring window |
| 6108091 |
Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing |
August 22, 2000 |
| An apparatus and method for in-situ monitoring of thickness during chemical-mechanical polishing (CMP) of a substrate using a polishing tool and a film thickness monitor. The tool has an opening placed in it. The opening contains a monitoring window secured in it to create a monitoring |
| 6068539 |
Wafer polishing device with movable window |
May 30, 2000 |
| A wafer polishing device with movable window can be used for in-situ monitoring of a wafer during CMP processing. During most of the CMP operation, the window remains below a polishing surface of a polishing device to protect the window from the deleterious effects of the polishing p |
| 5083035 |
Position location in surface scanning using interval timing between scan marks on test wafers |
January 21, 1992 |
| A particle imager and method for imaging particles on surfaces of substrates. A surface is raster scanned by a collimated light beam and particles on the surface are detected by the scattered light caused by the particles. During a scan path the intensity of the scattered light is me |
| 4766324 |
Particle detection method including comparison between sequential scans |
August 23, 1988 |
| A particle detection method for matching particles detected in two scans of a surface taken at different times in which particles having a light scattering intensity above a collection threshold are first detected and the measured position and scattering intensity therefor stored in a |
| 4641967 |
Particle position correlator and correlation method for a surface scanner |
February 10, 1987 |
| A method and apparatus for particle detection and position correlation that fuses separate detections of the same particle on adjacent scan lines into one. A first scan line on a surface is scanned with a laser beam and the scattered light detected. The detection generates address and am |
