| Patent Number |
Title Of Patent |
Date Issued |
| 7511354 |
Well for CMOS imager and method of formation |
March 31, 2009 |
| A well region of a first conductivity type located in a substrate of the first conductivity type and below about half the channel length of an electrically active portion of a transistor gate is disclosed. The well region is laterally displaced from a charge collection region of a second |
| 7510900 |
Methods of forming a double pinned photodiode |
March 31, 2009 |
| A pinned photodiode, which is a double pinned photodiode having increased electron capacitance, and a method for forming the same are disclosed. The invention provides a pinned photodiode structure comprising a substrate base over which is a first layer of semiconductor material. The |
| 7495273 |
Double pinned photodiode for CMOS APS and method of formation |
February 24, 2009 |
| A pinned photodiode, which is a double pinned photodiode having increased electron capacitance, and a method for forming the same are disclosed. The invention provides a pinned photodiode structure comprising a substrate base over which is a first layer of semiconductor material. The |
| 7432121 |
Isolation process and structure for CMOS imagers |
October 7, 2008 |
| A barrier implanted region of a first conductivity type formed in lieu of an isolation region of a pixel sensor cell that provides physical and electrical isolation of photosensitive elements of adjacent pixel sensor cells of a CMOS imager. The barrier implanted region comprises a first |
| 7420233 |
Photodiode for improved transfer gate leakage |
September 2, 2008 |
| An image sensing circuit and method is disclosed, wherein a photodiode is formed in a substrate through a series of angled implants. The photodiode is formed by a first, second and third implant, wherein at least one of the implants are angled so as to allow the resulting photodiode to e |
| 7387908 |
CMOS imager with enhanced transfer of charge and low voltage operation and method of formation |
June 17, 2008 |
| A dopant gradient region of a first conductivity type and a corresponding channel impurity gradient below a transfer gate and adjacent a charge collection region of a CMOS imager photodiode are disclosed. The channel impurity gradient in the transfer gate provides a complete charge t |
| 7385232 |
CMOS imager with enhanced transfer of charge and low voltage operation and method of formation |
June 10, 2008 |
| A dopant gradient region of a first conductivity type and a corresponding channel impurity gradient below a transfer gate and adjacent a charge collection region of a CMOS imager photodiode are disclosed. The channel impurity gradient in the transfer gate provides a complete charge t |
| 7244646 |
Pixel design to improve photodiode capacitance and method of forming same |
July 17, 2007 |
| A CMOS imager with two adjacent pixel active area regions without the presence of an intervening trench isolation region that typically separates two adjacent pixels and their associated photodiodes is provided. The shared active area region isolates the two adjacent photodiodes and |
| 7190041 |
Well for CMOS imager |
March 13, 2007 |
| A well region of a first conductivity type located in a substrate of the first conductivity type and below about half the channel length of an electrically active portion of a transistor gate is disclosed. The well region is laterally displaced from a charge collection region of a second |
| 7153719 |
Method of fabricating a storage gate pixel design |
December 26, 2006 |
| A method of fabricating a pixel cell having a shutter gate structure. First and second charge barriers are respectively created between a photodiode and a first charge storage region and between the first storage region and a floating diffusion region. A global shutter gate is formed |
| 7078745 |
CMOS imager with enhanced transfer of charge and low voltage operation |
July 18, 2006 |
| A dopant gradient region of a first conductivity type and a corresponding channel impurity gradient below a transfer gate and adjacent a charge collection region of a CMOS imager photodiode are disclosed. The channel impurity gradient in the transfer gate provides a complete charge t |
| 7009227 |
Photodiode structure and image pixel structure |
March 7, 2006 |
| A CMOS imager with two adjacent pixel active area regions without the presence of an intervening trench isolation region that typically separates two adjacent pixels and their associated photodiodes is provided. The shared active area region isolates the two adjacent photodiodes and |
| 6921934 |
Double pinned photodiode for CMOS APS and method of formation |
July 26, 2005 |
| A pinned photodiode, which is a double pinned photodiode having increased electron capacitance, and a method for forming the same are disclosed. The invention provides a pinned photodiode structure comprising a substrate base over which is a first layer of semiconductor material. There i |
| 6897082 |
Method of forming well for CMOS imager |
May 24, 2005 |
| A well region of a first conductivity type located in a substrate of the first conductivity type and below about half the channel length of an electrically active portion of a transistor gate is disclosed. The well region is laterally displaced from a charge collection region of a second |
