| Patent Number |
Title Of Patent |
Date Issued |
| 5531974 |
Flux grown, monosize oxide particles |
July 2, 1996 |
| The preparation of an amorphous gel of a hydrated oxide is coupled with the technique of controlled seeding to obtain monosize crystallized particles. Crystalline oxide particles, such as phosphors, are formed by a method comprising: (a) selecting an oxide system; (b) forming an amorphou |
| 5371066 |
Method for oxidizing precursor compounds of superconducting oxides |
December 6, 1994 |
| A precursor material is superoxidized to a superconducting oxide material in an atmosphere containing a reactive component that reacts with and removes hydroxide ion (OH.sup.-), replacing it with peroxide ion (O.sup.-). Preferred reactive components include H.sub.2 O.sub.2, N.sub.2 O |
| 5352481 |
Process for forming particles having a uniform size distribution |
October 4, 1994 |
| A process is provided for fabricating coated particles of a substantially uniform particle size. The process comprises coating small particles of well-defined crystalline phases with a polymerized gel. The process results in a ball-type sol-gel coating of the particles to provide par |
| 5344816 |
Stable high oxidation state superconducting oxides |
September 6, 1994 |
| High temperature superconducting oxide materials can be taken to a higher, but stable, state of oxidation by removing H-impurities, such as OH.sup.-, using I.sub.2 /O.sub.2 mixtures in a reactive atmosphere process. A higher T.sub.c and a narrower .DELTA.T-transition result. |
| 5252949 |
Chemical sensor for carbon monoxide detection |
October 12, 1993 |
| A ceramic sensor (12) comprising a thin film (14) of Cu.sub.1=x Mn.sub.2-x O.sub.4-y is provided that quantitatively measures the partial pressure of CO gas in a flowing system (22). The sensor is specific to CO gas and is negligibly affected by the presence of the common automobile exha |
| 5246687 |
Solid-state preparation of high purity barium sulfate |
September 21, 1993 |
| A novel, solid-state, low-temperature preparation of barium sulfate provides a higher purity material than that obtained by the conventional method of precipitation. The reaction involves heating a barium oxysalt in the presence of at least one sulfur-containing species for a period of |
| 5146468 |
Gas doping of solids by crystal growth |
September 8, 1992 |
| A high concentration of diatomic molecules is caged in a host crystal by a crystal growth process, in which all other internal degrees of freedom of the diatomic molecule, except the vibrational, are frozen. Such a system provides an efficient mid-infrared, solid-state laser that can be |
| 5128954 |
Impregnation of a solid from the gas phase |
July 7, 1992 |
| Post-growth gas-impregnation of an ionic crystal is provided to achieve a high level of caged neutral diatomic species or charged diatomic species, where all other internal degrees of freedom of the species, except the vibrational, are frozen. In the former case, the neutral diatomic spe |
| 5069701 |
Preparation of fluoride glass by chemical vapor deposition |
December 3, 1991 |
| A fluoride glass is prepared by depositing a solid including a metal fluoride on a heated substrate, from a gaseous mixture of a nonmetallo-organic compound, carbon dioxide, and a source of carbonyl fluoride. The nonmetallo-organic compound contains the metallic cation of the metal f |
| 5032374 |
Preparation of metal sulfides |
July 16, 1991 |
| Metal sulfides are prepared by reacting a compound of the metal and an oxygen-containing anion, with a source of carbonyl sulfide. The resulting metal sulfide is not contaminated by hydrogen, as in the form of hydroxides, and is suitable for use in photoluminescence and electrolumine |
| 5026409 |
Preparation of fluoride glass optical preforms and fibers |
June 25, 1991 |
| A preform for preparation of optical fibers is prepared by inserting a rod of a higher index of refraction fluoride glass into the bore of a hollow cylinder of a lower index of refraction fluoride glass fiber. This preform precursor is processed to collapse the hollow cylinder inwardly t |
| 4869893 |
Preparation of high purity compounds of sulfur, selenium, and tellurium |
September 26, 1989 |
| A method for preparing compounds of sulfur, selenium, and tellurium includes the formation of the compound from the elements in a closed environment which excludes oxygen, and then the purification of the compound by contacting it with carbon or carbon monoxide. Oxygen, the principal |
| 4857293 |
Process for the preparation of ultrapure heavy metal fluorides |
August 15, 1989 |
| This invention provides a method for the preparation of ultrapure active metal fluorides of increased purity from their metal oxides by reacting an active metal with a predetermined amount of HF(aq) to form a solid reaction product which is dried under controlled heating to form a hy |
| 4839328 |
Catalyst material and a process for its preparation |
June 13, 1989 |
| A catalyst material having a catalyst metal supported on a substrate, wherein the substrate has at least two types of surface atomic sites at which the catalyst metal can reside, and the catalyst metal resides primarily in one of those types of sites. In one catalyst material having |
| 4784716 |
Hybrid single crystal optic fibers by embedding |
November 15, 1988 |
| A process of fabricating a hybrid single crystal fiber having nonlinear optical properties such as frequency doubling. Said process includes applying a force to a fiber core resting upon a bulk nonlinear crystal such as LiIO.sub.3 in a saturated solution of LiIO.sub.3 in water. After |
| 4756901 |
Purification of (Nb.sub.1-x Ta.sub.x).sub.2 O.sub.5 |
July 12, 1988 |
| (Nb.sub.1-x Ta.sub.x).sub.2 O.sub.5 ("NTO") is purified of undesirable impurity elements present in small amounts by contacting the NTO in finely divided form to an extraction phase containing chloride, bromide, or iodide ions at a temperature whereat the ions react to remove the imp |
| 4752454 |
Process for the preparation of ultrapure active metal fluorides |
June 21, 1988 |
| This invention provides a method for the preparation of ultrapure active metal fluorides of increased purity from their metal oxides by reacting an active metal with a predetermined amount of HF(aq) to form a solid reaction product which is dried under controlled heating to form a hy |
| 4724038 |
Process for preparing single crystal binary metal oxides of improved purity |
February 9, 1988 |
| A method is disclosed for the growth of single crystals of a binary metal oxides of the formula ABO.sub.3 where A is an alkali or alkaline earth metal, B is at least one element selected from titanium, niobium and tantalum. A mixture comprising the constituent components of the ABO.sub.3 |
| 4680044 |
Method of modifying the refractive index of fluoride glass |
July 14, 1987 |
| The present invention relates to a method of producing a fluoride glass preform and/or fiber having a modified refractive index by heating the fluoride glass preform to a temperature that is above its glass transition temperature, but below its devitrification temperature; inserting a fi |
| 4636378 |
Method of preparation of perovskite-type compounds |
January 13, 1987 |
| The present invention relates to a low temperature method of preparing a compound of the formula:whereinA=Ba, Sr, Ca and Pb; andB=Ti, Zr and Hf,by(a) reacting a B-alkoxide, with a predetermined amount of aqueous A-hydroxide,(b) heating the reaction mixture to an initial temperature of 100.de |
| 4600442 |
Process for the removal of impurities from optical component materials |
July 15, 1986 |
| A process is disclosed for the removal of water and water derived impurities, e.g. OH.sup.-, substitutionally or interstitially incorporated in the structure of crystalline and amorphous materials, more specifically, in metal oxides, e.g. fused silica or aluminum oxide, wherein the m |
| 4578252 |
Method for preparing ultra-pure zirconium and hafnium tetrafluorides |
March 25, 1986 |
| A method for preparing ultra-pure metal tetrafluorides in which 3d such as Fe impurities are separated from impure material by a combined vaporization-electrolytic separation procedure. Sublimation and distillation methods are disclosed in combination with electrolytic separation by |
| 4519986 |
Process for preparation of ultrapure thorium fluoride |
May 28, 1985 |
| The specification discloses a process for the preparation of ultrapure thorium fluoride (ThF.sub.4) having minimized water content and consequent maximized optical transmission of 10.6 micrometer radiation. First, thorium oxide is reacted with aqueous hydrofluoric acid to form a solid |
| 4465656 |
Process for preparation of water-free oxide material |
August 14, 1984 |
| The specification discloses new and improved processes for forming water-free metal or non-metal oxide materials, which may then be melted and formed into optical components in vitreous or crystal form, which are free of the hydrogen-impurity absorption in the near infrared wavelength |
| 4462974 |
Process for preparation of water-free oxide material |
July 31, 1984 |
| The specification discloses new and improved processes for forming water-free metal or non-metal oxide materials, which may then be melted and formed into optical components in vitreous or crystal form, which are free of the hydrogen-impurity absorption in the near infrared wavelength |
| 4462970 |
Process for preparation of water-free oxychloride material |
July 31, 1984 |
| The specification discloses a process for forming a water-free rare earth oxychloride powder by exposing a water-containing rare earth oxide powder to a reactive atmosphere of chlorine and oxygen at 1000.degree. C. for 24 hours to remove water impurities from the oxide powder and to |
| 4429009 |
Process for surface conversion of vitreous silica to cristobalite |
January 31, 1984 |
| The specification discloses a process for converting the surface layer of a body of vitreous silica to the more stable crystalline form of silica known as cristobalite. The surface of the body of vitreous silica is exposed to a gas phase reactive atmosphere comprising atomic iodine at a |
| 4409260 |
Process for low-temperature surface layer oxidation of a semiconductor substrate |
October 11, 1983 |
| The specification discloses a process for forming a coherent, uniform oxide layer on the surface of a selected semiconductor material by heating a wafer of the selected semiconductor material at a temperature of about 750.degree. C. or lower in the presence of a chosen oxygen-containing |
| 4379733 |
Bicameral mode crystal growth apparatus and process |
April 12, 1983 |
| An apparatus and process for growing large single halide crystals that are ultra pure is described. A bicameral apparatus and process is employed in which the crystals are grown in a reactive chamber positioned within an inert chamber. A radial seal is provided on the furnace chamber to |
| 4341873 |
Fluorozirconate, glass and the process for making the same |
July 27, 1982 |
| Improved multicomponent fluorozirconate glasses, doped with chlorine, and a process for making them are disclosed that are continuously transmissive in the infrared spectrum. |
| 4332879 |
Process for depositing a film of controlled composition using a metallo-organic photoresist |
June 1, 1982 |
| The specification describes a process for depositing a film of controlled composition on a substrate by using a metallo-organic photoresist in which the organic portion is combusted by heating in a reactive atmosphere to leave a residual deposit of a desired substance on the substrate. T |
| 4315832 |
Process for increasing laser crystal fluorescence yield by controlled atmosphere processing |
February 16, 1982 |
| The specification discloses a process for modifying the environment of active atoms in a selected material by removing impurities from the environment. The material is heated at an elevated temperature in an atmosphere conducive to the formation of atomic oxygen so that the atomic ox |
| 4267205 |
Process for low-temperature surface layer oxidation of a semiconductor substrate |
May 12, 1981 |
| The specification discloses a process for forming a coherent, uniform oxide layer on the surface of a selected semiconductor material by heating a wafer of the selected semiconductor material at a predetermined elevated temperature in an atmosphere conducive to the formation of atomic ox |
| 4190640 |
Generation of nascent bromine for use in the growth of ultra pure metal bromides |
February 26, 1980 |
| An improved process for generating nascent bromine through the pyrolytic dissociation of CBr.sub.4 is shown to be applicable to the growth of large single crystals of metal bromides from the melt. |
| 4190487 |
Reactive atmosphere processing method of crystal growth of alkaline earth chlorides |
February 26, 1980 |
| Alkaline earth chloride crystals exhibiting substantially improved physical and optical transmission characteristics are grown from starting powders by a one step Reactive Atmospheric Processing (RAP) method. |
| 4128589 |
Generation of CF.sub.4 from Teflon for reactive atmosphere processing and growth of metal fluori |
December 5, 1978 |
| A tetrafluoromethane (CF.sub.4) generator and process is disclosed that facilitates the relatively low temperature production of CF.sub.4 gas via controlled decomposition of polytetrafluoroethylene (Teflon) and tetrafluoroethylene (C.sub.2 F.sub.4). CF.sub.4 produced via this process |
| 4076574 |
Reactive atmosphere crystal growth method |
February 28, 1978 |
| Alkali metal halide crystals exhibiting substantially improved physical and optical transmission characteristics are grown from starting powders by a one step Reactive Atmospheric Processing (RAP) method. |
| 3969491 |
Purification of alkali metal chlorides and bromides |
July 13, 1976 |
| We have discovered that alkali halides may be purified, particularly of trace anionic and cationic impurities, by scrubbing a melt of the alkali halide with gaseous nascent halogen. The halide radical of the gaseous nascent halogen preferably corresponds to the halide radical of the alka |
| 3959442 |
Preparing single crystals of Li(Ho,Y,Er,Tm,Dy)F4 in HF atmosphere |
May 25, 1976 |
| Single crystals, useful as laser emission compounds, having the formula ARF.sub.4 wherein A is potassium, sodium, or lithium, and R is holmium, yttrium, erbium, or dysprosium are prepared by a direct congruent melt crystal growth process that yields crystals exhibiting substantially |
| 3935302 |
Preparation of alkaline earth metal halide crystals for laser windows |
January 27, 1976 |
| An invention directed to the preparation of laser windows from halide crystals purified by congruent growth from the melt by a reactive atmospheric processing method is disclosed. Single crystal refractory metal halides, and rare earth halides prepared by this invention can be used t |
| 3932597 |
Purification of alkali metal halides |
January 13, 1976 |
| A new process or method has been developed whereby the purity of metal halides, prepared by conventional methods, can be significantly upgraded. The process, which includes a scrubbing of metal halides with a halide-source species in the vapor phase, has been shown to be effective no |
