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Inventor:
Parthier; Lutz
Address:
Kleinmachnow, DE
No. of patents:
14
Patents:












Patent Number Title Of Patent Date Issued
7968074 Method for making low-stress large-volume crystals with reduced stress birefringence and more un June 28, 2011
The method produces low-stress, large-volume crystals with low birefringence and uniform index of refraction. The method includes growing the crystal with larger than desired dimensions including diameter and height from a melt; cooling and tempering the crystal with the larger than
7883578 Process for preparing CaF.sub.2 lens blanks especially for 193 nm and 157 nm lithography with mi February 8, 2011
Homogeneity residuals of the refractive index have a strong influence on the performance of lithography tools for both 193 and 157 nm application wavelengths. By systematic investigations of various defects in the real structure of CaF.sub.2 crystals, the origin of homogeneity residuals
7873084 Arrangement and method for preventing the depolarization of linear-polarized light during the tr January 18, 2011
A process and a device is described to avoid the depolarization of linear-polarized light during the transmission of light through crystals exhibiting a {111} or {100} crystal plane, respectively, and a <100> or <111> crystal axis, respectively. The device is characterize
7868708 Method and apparatus for making a highly uniform low-stress single crystal by drawing from a mel January 11, 2011
The method of making uniform low-stress crystals includes immersing a seed crystal held at a temperature under its melting point in a melt in a crucible and drawing it from the melt. The crystal and/or melt are rotated relative to each other and a planar phase boundary surface is mai
7837969 Method of making large-volume CaF.sub.2 single crystals for optical elements with an optic axis November 23, 2010
The method of making a single crystal, especially a CaF.sub.2 single crystal, includes tempering, in which the crystal is heated at <18 K/h to a temperature of 1000.degree. C. to 1350.degree. C. and held at this temperature for at least 65 hours with maximum temperature differences
7742156 Method of testing optical materials by irradiating with high energy density radiation, optical m June 22, 2010
An optical material for lithographic applications is selected from crystal materials by a testing method. The crystal materials are preferably quartz and/or alkali or alkaline earth halides, especially fluorides, or mixed crystals. The testing method includes three tests to measure i
7688444 Method of determining laser stabilities of optical materials, crystals selected according to sai March 30, 2010
The method determines laser stability of an optical material, which is suitable for making an optical element through which high-energy light passes. The method includes pre-irradiation to produce radiation damage and measurement of the resulting induced non-intrinsic fluorescence. The
7679806 Method for making optical elements for microlithography, the lens systems obtained by the method March 16, 2010
The optical elements for ultraviolet radiation, especially for microlithography, are made from cubic granet, cubic spinel, cubic perovskite and/or cubic M(II)- as well as M(IV)-oxides. The optical elements are made from suitable crystals of Y.sub.3Al.sub.5O.sub.12, Lu.sub.3Al.sub.5O.
7534412 Large-volume CaF.sub.2 single crystals with reduced scattering and improved laser stability, and May 19, 2009
Single crystals with low scattering, small refractive index differences and few small angle grain boundaries have a bi-directional scattering distribution function value (BSDF) of less than 1.5*10.sup.-6 or 5*10.sup.-7.
7522270 Method for determination of irreversible radiation damage of optical materials April 21, 2009
The method determines the extent of irreversible radiation damage of an optical material. The method includes the following three tests to determine the extent of irreversible radiation damage: 1) the optical material is irradiated with ultraviolet radiation at a wavelength of 193 nm
7476274 Method and apparatus for making a highly uniform low-stress single crystal by drawing from a mel January 13, 2009
The method provides a uniform low-stress single crystal in a predetermined crystal orientation. The method of making it includes immersing a single crystal held at a temperature under its melting point in a melt of crystal raw material and drawing it from the melt to grow the crystal.
7393409 Method for making large-volume CaF.sub.2 single cystals with reduced scattering and improved las July 1, 2008
The method provides CaF.sub.2 single crystals with low scattering, small refractive index differences and few small angle grain boundaries, which can be tempered at elevated temperatures. In the method a CaF.sub.2 starting material is heat-treated for at least five hours at temperatures
7344595 Method and apparatus for purification of crystal material and for making crystals therefrom and March 18, 2008
The method for producing single crystals includes drying crystal raw material by removing water, reaction of impurities with a scavenger, preferably a metal halide, and homogenizing the melt. The method is performed with the raw material in a melt vessel with a variable-sized through
7303627 Method for making low-stress large-volume not-(111)-oriented crystals with reduced stress birefr December 4, 2007
A method is described for making an especially not-(111)-oriented low-stress large-volume crystal having a glide plane with reduced stress birefringence and more uniform refractive index. The method includes growing and tempering the crystal while heating and/or cooling to form a tem










 
 
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