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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Parikh; Primit
Address:
Goleta, CA
No. of patents:
32
Patents:












Patent Number Title Of Patent Date Issued
8575651 Devices having thick semi-insulating epitaxial gallium nitride layer November 5, 2013
Semiconductor device structures and methods of fabricating semiconductor devices structures are provided that include a semi-insulating or insulating GaN epitaxial layer on a conductive semiconductor substrate and/or a conductive layer. The semi-insulating or insulating GaN epitaxial
8274159 Group III nitride based flip-chip integrated circuit and method for fabricating September 25, 2012
A circuit substrate has one or more active components and a plurality of passive circuit elements on a first surface. An active semiconductor device has a substrate with layers of material and a plurality of terminals. The active semiconductor device is flip-chip mounted on the circu
8237198 Semiconductor heterostructure diodes August 7, 2012
Planar Schottky diodes for which the semiconductor material includes a heterojunction which induces a 2DEG in at least one of the semiconductor layers. A metal anode contact is on top of the upper semiconductor layer and forms a Schottky contact with that layer. A metal cathode contact i
8169005 High voltage GaN transistors May 1, 2012
A multiple field plate transistor includes an active region, with a source, a drain, and a gate. A first spacer layer is over the active region between the source and the gate and a second spacer layer over the active region between the drain and the gate. A first field plate on the
8120064 Wide bandgap transistor devices with field plates February 21, 2012
A transistor structure comprising an active semiconductor layer with metal source and drain contacts formed in electrical contact with the active layer. A gate contact is formed between the source and drain contacts for modulating electric fields within the active layer. A spacer lay
7994512 Gallium nitride based diodes with low forward voltage and low reverse current operation August 9, 2011
New Group III based diodes are disclosed having a low on state voltage (V.sub.f) and structures to keep reverse current (I.sub.rev) relatively low. One embodiment of the invention is Schottky barrier diode made from the GaN material system in which the Fermi level (or surface potential)
7977686 Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting d July 12, 2011
A packaged light emitting device includes a carrier substrate having a top surface and a bottom surface, first and second conductive vias extending from the top surface of the substrate to the bottom surface of the substrate, and a bond pad on the top surface of the substrate in elec
7955918 Robust transistors with fluorine treatment June 7, 2011
A semiconductor device, and particularly a high electron mobility transistor (HEMT), having a plurality of epitaxial layers and experiencing an operating (E) field. A negative ion region in the epitaxial layers to counter the operating (E) field. One method for fabricating a semicond
7928475 Wide bandgap transistor devices with field plates April 19, 2011
A transistor structure comprising an active semiconductor layer with metal source and drain contacts formed in electrical contact with the active layer. A gate contact is formed between the source and drain contacts for modulating electric fields within the active layer. A spacer lay
7915644 Wide bandgap HEMTs with source connected field plates March 29, 2011
A HEMT comprising an active region comprising a plurality of active semiconductor layers formed on a substrate. Source electrode, drain electrode, and gate are formed in electrical contact with the active region. A spacer layer is formed on at least a portion of a surface of said act
7898004 Semiconductor heterostructure diodes March 1, 2011
Planar Schottky diodes for which the semiconductor material includes a heterojunction which induces a 2DEG in at least one of the semiconductor layers. A metal anode contact is on top of the upper semiconductor layer and forms a Schottky contact with that layer. A metal cathode contact i
7893500 High voltage GaN transistors February 22, 2011
A multiple field plate transistor includes an active region, with a source, a drain, and a gate. A first spacer layer is over the active region between the source and the gate and a second spacer layer over the active region between the drain and the gate. A first field plate on the
7875907 III-nitride bidirectional switches January 25, 2011
Bidirectional switches are described. The bidirectional switches include first and a second III-N based high electron mobility transistor. In some embodiments, the source of the first transistor is in electrical contact with a source of the second transistor. In some embodiments, the dra
7851909 Group III nitride based flip-chip integrated circuit and method for fabricating December 14, 2010
A circuit substrate has one or more active components and a plurality of passive circuit elements on a first surface. An active semiconductor device has a substrate with layers of material and a plurality of terminals. The active semiconductor device is flip-chip mounted on the circu
7834367 Low voltage diode with reduced parasitic resistance and method for fabricating November 16, 2010
A method of making a diode begins by depositing an Al.sub.xGa.sub.1-xN nucleation layer on a SiC substrate, then depositing an n+ GaN buffer layer, an n- GaN layer, an Al.sub.xGa.sub.1-xN barrier layer, and an SiO.sub.2 dielectric layer. A portion of the dielectric layer is removed a
7812369 Fabrication of single or multiple gate field plates October 12, 2010
A process for fabricating single or multiple gate field plates using consecutive steps of dielectric material deposition/growth, dielectric material etch and metal evaporation on the surface of a field effect transistors. This fabrication process permits a tight control on the field
7692263 High voltage GaN transistors April 6, 2010
A multiple field plate transistor includes an active region, with a source, a drain, and a gate. A first spacer layer is over the active region between the source and the gate and a second spacer layer over the active region between the drain and the gate. A first field plate on the
7638818 Robust transistors with fluorine treatment December 29, 2009
A semiconductor device, and particularly a high electron mobility transistor (HEMT), having a plurality of epitaxial layers and experiencing an operating (E) field. A negative ion region in the epitaxial layers to counter the operating (E) field. One method for fabricating a semicond
7612390 Heterojunction transistors including energy barriers November 3, 2009
A heterojunction transistor may include a channel layer comprising a Group III nitride, a barrier layer comprising a Group III nitride on the channel layer, and an energy barrier comprising a layer of a Group III nitride including indium on the channel layer such that the channel layer
7573078 Wide bandgap transistors with multiple field plates August 11, 2009
A transistor comprising a plurality of active semiconductor layers on a substrate, with source and drain electrodes in contact with the semiconductor layers. A gate is formed between the source and drain electrodes and on the plurality of semiconductor layers. A plurality of field pl
7550783 Wide bandgap HEMTs with source connected field plates June 23, 2009
A HEMT comprising a plurality of active semiconductor layers formed on a substrate. Source electrode, drain electrode, and gate are formed in electrical contact with the plurality of active layers. A spacer layer is formed on at least a portion of a surface of said plurality of active
7501669 Wide bandgap transistor devices with field plates March 10, 2009
A transistor structure comprising an active semiconductor layer with metal source and drain contacts formed in electrical contact with the active layer. A gate contact is formed between the source and drain contacts for modulating electric fields within the active layer. A spacer layer i
7476956 Gallium nitride based diodes with low forward voltage and low reverse current operation January 13, 2009
New Group III based diodes are disclosed having a low on state voltage (V.sub.f) and structures to keep reverse current (I.sub.rev) relatively low. One embodiment of the invention is Schottky barrier diode made from the GaN material system in which the Fermi level (or surface potential)
7388236 High efficiency and/or high power density wide bandgap transistors June 17, 2008
Field effect transistors having a power density of greater than 40 W/mm when operated at a frequency of at least 4 GHz are provided. The power density of at least 40 W/mm may be provided at a drain voltage of 135 V. Transistors with greater than 60% PAE and a power density of at least 5
7355215 Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies April 8, 2008
High electron mobility transistors (HEMT) are provided having an output power of greater than 3.0 Watts when operated at a frequency of at least 30 GHz. The HEMT has a power added efficiency (PAE) of at least about 20 percent and/or a gain of at least about 7.5 dB. The total width of the
7354782 Group III nitride based flip-chip integrated circuit and method for fabricating April 8, 2008
A flip-chip integrated circuit and method for fabricating the integrated circuit are disclosed. A method according to the invention comprises forming a plurality of active semiconductor devices on a wafer and separating the active semiconductor devices. Passive components and interco
7329905 Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting d February 12, 2008
A packaged light emitting device includes a carrier substrate having a top surface and a bottom surface, first and second conductive vias extending from the top surface of the substrate to the bottom surface of the substrate, and a bond pad on the top surface of the substrate in elec
7230284 Insulating gate AlGaN/GaN HEMT June 12, 2007
AlGaN/GaN HEMTs are disclosed having a thin AlGaN layer to reduce trapping and also having additional layers to reduce gate leakage and increase the maximum drive current. One HEMT according to the present invention comprises a high resistivity semiconductor layer with a barrier semi
7161194 High power density and/or linearity transistors January 9, 2007
Field effect transistors having a power density of greater than 25 W/mm when operated at a frequency of at least 4 GHz are provided. The power density may be at least 30 W/mm when operated at 4 GHz. The power density of at least 30 W/mm may be provided at a drain voltage of 120 V. Tr
7126426 Cascode amplifier structures including wide bandgap field effect transistor with field plates October 24, 2006
A multi-stage amplifier circuit arranged to take advantage of the desirable characteristics of non-field-plate and field plate transistors when amplifying a signal. One embodiment of a multi-stage amplifier according to the present invention comprises a non-field-plate transistor and
6949774 Gallium nitride based diodes with low forward voltage and low reverse current operation September 27, 2005
New Group III based diodes are disclosed having a low on state voltage (V.sub.f), and structures to keep reverse current (I.sub.rev) relatively low. One embodiment of the invention is Schottky barrier diode made from the GaN material system in which the Fermi level (or surface potential)
6825559 Group III nitride based flip-chip intergrated circuit and method for fabricating November 30, 2004
A flip-chip integrated circuit includes a circuit substrate having electronic components. The circuit substrate typically includes GaAs or Si. Another substrate can include Group III nitride based active semiconductor devices. This substrate typically includes SiC and can be separate










 
 
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