| Patent Number |
Title Of Patent |
Date Issued |
| 8114691 |
Semiconductor light emitting device having textured structure and method of manufacturing the sa |
February 14, 2012 |
| A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured struct |
| 7759140 |
Light-emitting device and method of manufacturing the same |
July 20, 2010 |
| Provided is a light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate having at least one protruded portion with a curved surface in which a consistent defect density and uniform stress distribution can be obtained even when the gr |
| 7736925 |
Method of fabricating nitride-based semiconductor laser diode |
June 15, 2010 |
| A method of manufacturing a nitride-based semiconductor laser diode that can minimize optical absorption on a cavity mirror plane and improve the surface roughness of the cavity mirror plane is provided. The method includes the steps of: forming on a (0001) GaN (gallium nitride) subs |
| 7655959 |
Semiconductor light emitting device having textured structure and method of manufacturing the sa |
February 2, 2010 |
| A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured struct |
| 7632742 |
Substrate for growing Pendeo epitaxy and method of forming the same |
December 15, 2009 |
| A Pendeo-epitaxy growth substrate and a method of manufacturing the same are provided. The Pendeo-epitaxy growth substrate includes a substrate, a plurality of pattern areas formed on the substrate in a first direction for Pendeo-epitaxy growth, and at least one solution blocking layer |
| 7483463 |
Ridge-waveguide semiconductor laser diode |
January 27, 2009 |
| A ridge-waveguide semiconductor laser diode with an improved current injection structure is provided. The ridge-waveguide semiconductor laser diode includes: a substrate; a lower multi-semiconductor layer formed on the substrate; an active layer formed on the lower multi-semiconductor |
