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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Paek; Ho-sun
Address:
Suwon-si, KR
No. of patents:
6
Patents:












Patent Number Title Of Patent Date Issued
8114691 Semiconductor light emitting device having textured structure and method of manufacturing the sa February 14, 2012
A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured struct
7759140 Light-emitting device and method of manufacturing the same July 20, 2010
Provided is a light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate having at least one protruded portion with a curved surface in which a consistent defect density and uniform stress distribution can be obtained even when the gr
7736925 Method of fabricating nitride-based semiconductor laser diode June 15, 2010
A method of manufacturing a nitride-based semiconductor laser diode that can minimize optical absorption on a cavity mirror plane and improve the surface roughness of the cavity mirror plane is provided. The method includes the steps of: forming on a (0001) GaN (gallium nitride) subs
7655959 Semiconductor light emitting device having textured structure and method of manufacturing the sa February 2, 2010
A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured struct
7632742 Substrate for growing Pendeo epitaxy and method of forming the same December 15, 2009
A Pendeo-epitaxy growth substrate and a method of manufacturing the same are provided. The Pendeo-epitaxy growth substrate includes a substrate, a plurality of pattern areas formed on the substrate in a first direction for Pendeo-epitaxy growth, and at least one solution blocking layer
7483463 Ridge-waveguide semiconductor laser diode January 27, 2009
A ridge-waveguide semiconductor laser diode with an improved current injection structure is provided. The ridge-waveguide semiconductor laser diode includes: a substrate; a lower multi-semiconductor layer formed on the substrate; an active layer formed on the lower multi-semiconductor










 
 
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