| Patent Number |
Title Of Patent |
Date Issued |
| 7265375 |
Optoelectonic devices having arrays of quantum-dot compound semiconductor superlattices therein |
September 4, 2007 |
| Methods of forming a nano-scale electronic and optoelectronic devices include forming a substrate having a semiconductor layer therein and a substrate insulating layer on the semiconductor layer. An etching template having a first array of non-photolithographically defined nano-chann |
| 7211458 |
Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related |
May 1, 2007 |
| A method of fabricating a semiconductor device includes forming a strained first semiconductor layer on an insulating layer that is between second semiconductor layers. The strained first semiconductor layer may be epitaxially grown from the second semiconductor layers to extend onto the |
| 6914256 |
Optoelectronic devices having arrays of quantum-dot compound semiconductor superlattices therein |
July 5, 2005 |
| Methods of forming a nano-scale electronic and optoelectronic devices include forming a substrate having a semiconductor layer therein and a substrate insulating layer on the semiconductor layer. An etching template having a first array of non-photolithographically defined nano-channels |
| 6709929 |
Methods of forming nano-scale electronic and optoelectronic devices using non-photolithographica |
March 23, 2004 |
| Methods of forming a nano-scale electronic and optoelectronic devices include forming a substrate having a semiconductor layer therein and a substrate insulating layer on the semiconductor layer. An etching template having a first array of non-photolithographically defined nano-channels |
| 5250452 |
Deposition of germanium thin films on silicon dioxide employing interposed polysilicon layer |
October 5, 1993 |
| The invention is a method of depositing a layer of polycrystalline silicon on a silicon dioxide substrate until the layer of polycrystalline silicon is thick enough to support the deposition of germanium thereon, but while thin enough to substantially avoid the deleterious effects on the |
| 5162246 |
Selective germanium deposition on silicon and resulting structures |
November 10, 1992 |
| The invention is a method of selectively forming contacts on ultra shallow source and drain junctions. The method comprises forming a gate structure that defines a gate on a silicon substrate, portions of which are covered with a layer of silicon dioxide while the portions adjacent the g |
| 5101247 |
Germanium silicon dioxide gate MOSFET |
March 31, 1992 |
| The invention is a method of depositing a layer of polycrystalline silicon on a silicon dioxide substrate until the layer of polycrystalline silicon is thick enough to support the deposition of germanium thereon, but while thin enough to substantially avoid the deleterious effects on the |
| 5089872 |
Selective germanium deposition on silicon and resulting structures |
February 18, 1992 |
| The invention is a method of selectively forming contacts on ultra shallow source and drain junctions. The method comprises forming a gate structure that defines a gate on a silicon substrate, portions of which are covered with a layer of silicon dioxide while the portions adjacent the g |
