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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Onishi; Yasuhiko
Address:
Nagano, JP
No. of patents:
24
Patents:












Patent Number Title Of Patent Date Issued
7911020 Semiconductor device having breakdown voltage maintaining structure and its manufacturing method March 22, 2011
A semiconductor device has an active portion having at least one well region in a semiconductor layer, and a breakdown voltage maintaining structure surrounding the active portion. The maintaining structure includes a conductor layer over each of a plurality of guard rings with an in
7372111 Semiconductor device with improved breakdown voltage and high current capacity May 13, 2008
The superjunction semiconductor device includes a drain drift section, which includes a first alternating conductivity type layer formed of first n-type regions and first p-type regions arranged alternately. The device also includes a peripheral section around the drain drift section,
7235841 Semiconductor device June 26, 2007
A semiconductor device includes an active region, an alternating conductivity type layer, and an insulation region surrounding the alternating conductivity type layer provided in a periphery section as a voltage withstanding section. The insulation region is made of an insulator with
7042046 Super-junction semiconductor device and method of manufacturing the same May 9, 2006
Disclosed is a semiconductor device facilitating a peripheral portion thereof with a breakdown voltage higher than the breakdown voltage in the drain drift layer without employing a guard ring or field plate. A preferred embodiment includes a drain drift region with a first alternati
7002211 Lateral super-junction semiconductor device February 21, 2006
A lateral semiconductor device includes an alternating conductivity type layer for providing a first semiconductor current path in the ON-state of the device and for being depleted in the OFF-state of the device, that has an improved structure for realizing a high breakdown voltage in th
7002205 Super-junction semiconductor device and method of manufacturing the same February 21, 2006
Disclosed is a semiconductor device facilitating a peripheral portion thereof with a breakdown voltage higher than the breakdown voltage in the drain drift layer without employing a guard ring or field plate. A preferred embodiment includes a drain drift region with a first alternati
6903418 Semiconductor device June 7, 2005
A semiconductor device facilitates obtaining a higher breakdown voltage in the portion of the semiconductor chip around the drain drift region and improving the avalanche withstanding capability thereof. A vertical MOSFET according to the invention includes a drain layer; a drain drift r
6900109 Method of manufacturing a semiconductor device with a vertical drain drift layer of the alternat May 31, 2005
A semiconductor device includes an improved drain drift layer structure of alternating conductivity types, that is easy to manufacture, and that facilitates realizing a high current capacity and a high breakdown voltage and to provide a method of manufacturing the semiconductor device. T
6825565 Semiconductor device November 30, 2004
A semiconductor device includes a drift region, which includes a first alternating conductivity type layer, and a peripheral region, which includes a second alternating conductivity type layer and a third alternating conductivity type layer in the surface portion of the peripheral re
6825537 Vertical field effect transistor November 30, 2004
In a trench super junction semiconductor element having a parallel p-n junction layer 14 with n-drift regions 12 and p-partition regions 13, both extending in a depth direction, being alternately joined, a part 20 in a shape of a three-dimensional curved surface in the end portion of eac
6768167 MIS semiconductor device and the manufacturing method thereof July 27, 2004
A MIS semiconductor device has a greatly improved relation between the on-resistance and the switching time by forming trench completely through a p base region and positioning the trench adjacent to a gate electrode, and then implanting n-type impurity ions using the gate electrode as a
6756636 Lateral super-junction semiconductor device June 29, 2004
A lateral semiconductor device includes an alternating conductivity type layer for providing a first semiconductor current path in the ON-state of the device and for being depleted in the OFF-state of the device, that has an improved structure for realizing a high breakdown voltage in th
6724042 Super-junction semiconductor device April 20, 2004
Disclosed is a semiconductor device facilitating a peripheral portion thereof with a breakdown voltage higher than the breakdown voltage in the drain drift layer without employing a guard ring or field plate. A preferred embodiment includes a drain drift region with a first alternati
6700141 Semiconductor device March 2, 2004
A reliable super-junction semiconductor device is provided that facilitates relaxing the tradeoff relation between the on-resistance and the breakdown voltage and improving the avalanche withstanding capability under an inductive load. The super-junction semiconductor device includes an
6696728 Super-junction semiconductor device February 24, 2004
To provide a super-junction MOSFET reducing the tradeoff relation between the on-resistance and the breakdown voltage greatly and having a peripheral structure, which facilitates reducing the leakage current in the OFF-state thereof and stabilizing the breakdown voltage thereof. The
6693323 Super-junction semiconductor device February 17, 2004
A method of manufacture reduces costs and provides an excellent mass-productivity, a super-junction semiconductor device, that facilitates reducing times of heat treatment of the alternating conductivity type layer subjects, and preventing the characteristics of the alternating condu
6677643 Super-junction semiconductor device January 13, 2004
A super-junction semiconductor is provided that facilitates easy mass-production thereof, reducing the tradeoff relation between the on-resistance and the breakdown voltage, obtaining a high breakdown voltage and reducing the on-resistance to increase the current capacity thereof. Th
6674126 Semiconductor device January 6, 2004
A semiconductor device facilitates obtaining a higher breakdown voltage in the portion of the semiconductor chip around the drain drift region and improving the avalanche withstanding capability thereof. A vertical MOSFET according to the invention includes a drain layer; a drain drift r
6621132 Semiconductor device September 16, 2003
The super-junction semiconductor device, which facilitates increased switching speed and reduced on-resistance, includes an alternating conductivity type layer formed of n-type drift regions and p-type partition regions arranged alternately, a pair of the n-type drift region and p-ty
6611021 Semiconductor device and the method of manufacturing the same August 26, 2003
A semiconductor device includes an improved drain drift layer structure of alternating conductivity types, that is easy to manufacture, and that facilitates realizing a high current capacity and a high breakdown voltage and to provide a method of manufacturing the semiconductor device. T
6586801 Semiconductor device having breakdown voltage limiter regions July 1, 2003
A semiconductor device facilitates preventing hot carriers from being injected into the insulation film so that the characteristics and the reliability of the active region thereof may not be impaired. The device includes an alternating-conductivity-type drain including heavily doped
6576935 Bidirectional semiconductor device and method of manufacturing the same June 10, 2003
A bidirectional semiconductor device facilitates making a current flow from the first MOSFET to the second MOSFET and vice versa across low on-resistance and exhibits a high breakdown voltage. The bidirectional semiconductor device includes a first n-channel MOSFET including base reg
6475864 Method of manufacturing a super-junction semiconductor device with an conductivity type layer November 5, 2002
A method of manufacturing reduces costs and provides an excellent mass-productivity, super-junction semiconductor device, which facilitates reducing times of heat treatment of the alternating conductivity type layer subjects, and preventing the characteristics of the alternating cond
5894139 Semiconductor device structure for insulated gate bipolar transistor April 13, 1999
A semiconductor device is provided which includes a first-conductivity-type collector layer having a rear surface on which a collector electrode is formed, a second-conductivity-type buffer layer laminated on the collector layer, a second-conductivity-type conductivity modulation layer f










 
 
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