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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Ong; Beng S.
Address:
Mississauga, CA
No. of patents:
203
Patents:


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Patent Number Title Of Patent Date Issued
8222076 Fabricating amorphous zinc oxide semiconductor layer July 17, 2012
A process for fabricating a semiconductor layer of an electronic device including: liquid depositing one or more zinc oxide precursor compositions and forming at least one semiconductor layer of the electronic device comprising predominately amorphous zinc oxide from the liquid depos
8153755 Electronic devices April 10, 2012
An electronic device, such as a thin film transistor containing a semiconductor of the Formula: ##STR00001## wherein R, R' and R'' are, for example, independently hydrogen, a suitable hydrocarbon, a suitable hetero-containing group, a halogen, or mixtures thereof; and n represents
8134144 Thin-film transistor March 13, 2012
There is provided herein a performance-enhancing composition comprising inorganic nanoparticles dispersed in a polymer selected from the group consisting of polysiloxane, polysilsesquioxane, and mixtures thereof. This composition, when applied to a thin-film transistor, such as a bot
8089062 Wax encapsulated electronic devices January 3, 2012
An electronic device comprising: a substrate, an active layer, and an encapsulating layer comprising at least one wax.
8084765 Electronic device having a dielectric layer December 27, 2011
An electronic device, such as a thin film transistor, is disclosed having a dielectric layer formed from a composition comprising a compound having at least one phenol group and at least one group containing comprising silicon. The resulting dielectric layer has good electrical propertie
8067264 Polythiophenes and devices thereof November 29, 2011
An electronic device containing a polythiophene ##STR00001## wherein R represents a side chain, m represents the number of R substituents; A is a divalent linkage; x, y and z represent, respectively, the number of R.sub.m substituted thienylenes, unsubstituted thienylenes, and divalent
8049205 Poly(alkynylthiophene)s and electronic devices generated therefrom November 1, 2011
An electronic device comprising a semiconductive material of Formula (I) ##STR00001## wherein R is a suitable hydrocarbon or a heteroatom containing group; and n represents the number of repeating units.
8039833 Polythiophenes and devices thereof October 18, 2011
An electronic device containing a polythiophene ##STR00001## wherein R represents a side chain, m represents the number of R substituents; A is a divalent linkage; x, y and z represent, respectively, the number of R.sub.m substituted thienylenes, unsubstituted thienylenes, and divalent
8003807 Device containing compound having indolocarbazole moiety and divalent linkage August 23, 2011
An electronic device including a compound comprising at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage.
7994497 Poly[bis(ethynyl)heteroacene]s and electronic devices generated therefrom August 9, 2011
An electronic device comprising a polymer of Formula or Structure (I) ##STR00001## wherein R.sub.1 is hydrogen, halogen, a suitable hydrocarbon, or a heteroatom containing group; R.sub.2 is hydrogen, a suitable hydrocarbon, a heteroatom containing group, or a halogen; R.sub.3 and R.
7923718 Organic thin film transistor with dual layer electrodes April 12, 2011
A thin-film transistor (TFT) with dual-layer source and drain electrodes is provided. Each source and drain electrode comprises a first layer and a second layer. The first layer has a work function which differs from the energy level of the semiconductor by at least 0.5 eV and the second
7919573 Polymer having thieno[3,2-b] thiophene moieties April 5, 2011
A polymer comprising one or more types of repeat units, wherein the polymer includes a substituted thieno[3,2-b]thiophene component A and a different component B in the same type of repeat unit or in different types of repeat units, and wherein the polymer excludes a substituted or u
7919015 Silver-containing nanoparticles with replacement stabilizer April 5, 2011
A process including: providing a composition comprising silver-containing nanoparticles and molecules of an initial stabilizer on the surface of the silver-containing nanoparticles; and mixing a replacement stabilizer comprising a carboxylic acid with the composition to replace at least
7918485 Security system using conductive and non-conductive regions April 5, 2011
Disclosed is an item, for example a document, including a substrate having thereon a multiplicity of separate printed markings, wherein the printed markings include both conductive printed markings and substantially non-conductive printed markings. The different conductive and substa
7906415 Device having zinc oxide semiconductor and indium/zinc electrode March 15, 2011
An electronic device including: (a) a semiconductor layer including crystalline zinc oxide; and (b) an electrode including a suitable amount of zinc, indium, or a mixture thereof.
7893495 Thin film transistor February 22, 2011
A thin film transistor is disclosed comprising comprises a substrate, a dielectric layer, and a semiconductor layer. The semiconductor layer, which is crystalline zinc oxide preferentially oriented with the c-axis perpendicular to the plane of the dielectric layer or substrate, is pr
7847052 Linked arylamine polymers December 7, 2010
A polymer of the following formula ##STR00001## wherein Ar is aryl or heteroaryl; X represents CH.sub.2, sulfur, oxygen, selenium, NR', or SiR''.sub.2 wherein R' and R'' are each a suitable hydrocarbon; m represents the number of X substituents; and n represents the number of the re
7834132 Electronic devices November 16, 2010
An electronic device, such as a thin film transistor containing a semiconductor of Formula/Structure ##STR00001## wherein R, R' and R'' are, for example, independently hydrogen, a suitable hydrocarbon, a suitable hetero-containing group, a halogen, or mixtures thereof; and n represe
7829727 Device containing compound having indolocarbazole moiety and divalent linkage November 9, 2010
An electronic device including a compound comprising at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage.
7820782 Poly(dithienylbenzo[1,2-b:4,5-b']dithiophene) polymers October 26, 2010
A polymer of the formula/structure ##STR00001## wherein R, R', and R'' are, for example, a suitable hydrocarbon, a halogen (halide) a hetero-containing group, or mixtures thereof; and n represents the number of repeating groups.
7795614 Device with phase-separated dielectric structure September 14, 2010
An electronic device including in any sequence: (a) a semiconductor layer; and (b) a phase-separated dielectric structure comprising a lower-k dielectric polymer and a higher-k dielectric polymer, wherein the lower-k dielectric polymer is in a higher concentration than the higher-k d
7795373 Ethynylene acene polymers September 14, 2010
A polymer of Formula or structure (I) ##STR00001## wherein at least one of R.sub.1 and R.sub.2 is a suitable hydrocarbon, hydrogen, a heteratom containing group, or a halogen; Ar and Ar' represent an aromatic moiety; x, y, a, b, c, d, e, f, and g represent the number of groups or rings,
7790498 Process using a broken gelled composition September 7, 2010
A process including: (a) providing a gelable composition comprising a gelable semiconductor polymer and a liquid, wherein the polymer is at a low concentration in the liquid; (b) gelling the gelable composition to result in a gelled composition; (c) breaking the gelled composition to
7781564 Polythiophenes and devices thereof August 24, 2010
A polythiophene wherein the monomer segments thereof contain ##STR00001## wherein A is a side chain; B is hydrogen or a side chain; and D is a divalent linkage, and wherein the number of A-substituted thienylene units (I) in the monomer segments is from about 1 to about 10, the number
7767999 Polythiophenes and devices thereof August 3, 2010
An electronic device containing a polythiophene ##STR00001## wherein R represents a side chain, m represents the number of R substituents; A is a divalent linkage; x, y and z represent, respectively, the number of R.sub.m substituted thienylenes, unsubstituted thienylenes, and divalent
7755081 Dielectric materials for electronic devices July 13, 2010
A dielectric material prepared from a siloxy/metal oxide hybrid composition, and electronic devices such as thin film transistors comprising such dielectric material are provided herein. The siloxy/metal oxide hybrid composition comprises a siloxy component such as, for example, a si
7754510 Phase-separated dielectric structure fabrication process July 13, 2010
A process for fabricating an electronic device including: depositing a layer comprising a semiconductor; liquid depositing a dielectric composition comprising a lower-k dielectric material, a higher-k dielectric material, and a liquid, wherein the lower-k dielectric material and the
7736831 Emulsion/aggregation process using coalescent aid agents June 15, 2010
A process for preparing a toner includes mixing a polymeric resin emulsion, a colorant dispersion, and a wax to form a mixture; optionally adding a coagulant to the mixture; heating the mixture at a temperature below a glass transition temperature of the polymeric resin to aggregate
7718999 Polythiophene electronic devices May 18, 2010
An electronic device with a semiconductor layer of (I) ##STR00001## wherein X is O or NR'; m represents the number of methylenes; M is a conjugated moiety; R and R' are selected from the group consisting of at least one of hydrogen, a suitable hydrocarbon, and a suitable hetero-conta
7718998 Thiophene electronic devices May 18, 2010
An electronic device, such as a thin film transistor, containing a semiconductor of Formula/Structure (I) ##STR00001## wherein each R' is independently at least one of hydrogen, and a suitable hydrocarbon; Ar is an aryl, inclusive of heteroaryl substituents; and M represents at least
7705346 Barrier layer for an organic electronic device April 27, 2010
A novel barrier layer which protects electronic devices from adverse environmental effects such as exposure to light, oxygen and/or moisture is described. The barrier layer comprises a polymer, an antioxidant, and an inorganic particulate material.
7705111 Poly(alkynylthiophene)s April 27, 2010
A polymer of the following formula ##STR00001## wherein R is a suitable hydrocarbon or a heteroatom containing group; and n represents the number of repeating units.
7652339 Ambipolar transistor design January 26, 2010
An ambipolar transistor, including a p-type semiconductor region and an n-type semiconductor region near the p-type semiconductor region. Also a first terminal and second terminal contact both the p-type semiconductor region and the n-type semiconductor region. Furthermore, the p-type
7651885 Electronic device fabrication process January 26, 2010
A process for fabricating an electronic device including: (a) forming a liquid composition using starting ingredients comprising an organic semiconductor and a stabilizer, wherein the stabilizer comprises a strong electron donor compound or a strong electron acceptor compound, wherein
7632703 Organic thin-film transistors December 15, 2009
Methods are disclosed for improving organic thin-film transistor (OTFT) performance by acid doping of the semiconducting layer. The semiconducting polymer comprising the semiconductor layer is doped with an acid, especially a Lewis acid, either during or after polymerization of the p
7619055 Linked arylamine polymers and electronic devices generated therefrom November 17, 2009
An electronic device like a thin film transistor containing an arylamine polymer of the formula ##STR00001## wherein Ar is aryl or heteroaryl; X represents CH.sub.2, sulfur, oxygen, selenium, NR', or SiR''.sub.2 wherein R' and R'' are each a suitable hydrocarbon; m represents the nu
7615607 Semiconductor polymers November 10, 2009
A polymer comprising those selected from the group consisting of at least one of Formula (I), Formula (II), or mixtures thereof ##STR00001## wherein each R.sub.1 to R.sub.10 is independently hydrogen, alkyl, aryl, alkoxy, halogen, arylalkyl, cyano, or nitro providing that R.sub.1 and
7586120 Ethynylene acene polymers and electronic devices generated therefrom September 8, 2009
An electronic device comprising a polymer of Formula (I) ##STR00001## wherein at least one of R.sub.1 and R.sub.2 is a suitable hydrocarbon, hydrogen, a heteroatom containing group, or a halogen; Ar and Ar' represent an aromatic moiety; x, y, a, b, c, d, e, f, and g represent the num
7563860 Semiconductors and electronic devices generated therefrom July 21, 2009
An electronic device containing a polymer of Formula (I), Formula (II), or mixtures, or isomers thereof ##STR00001## wherein each R.sub.1 through R.sub.10 is independently hydrogen, alkyl, aryl, alkoxy, halogen, arylalkyl, cyano, or nitro providing that R.sub.1 and R.sub.2 exclude h
7557370 Heteroacene polymers and electronic devices generated therefrom July 7, 2009
An electronic device comprising a semiconductive material of Formula or structure (I) ##STR00001## wherein each R.sub.1, R.sub.2, R.sub.3 and R.sub.4 are independently hydrogen (H), a heteroatom containing group, a suitable hydrocarbon, or a halogen; Ar and Ar' each independently re
7553706 TFT fabrication process June 30, 2009
A process for fabricating a thin film transistor including: (a) depositing a semiconductor layer; and (b) depositing a multilayer gate dielectric prior to or subsequent to the depositing the semiconductor layer, wherein the multilayer dielectric comprises: (i) a first layer comprising a
7550760 Polyacenes and electronic devices generated therefrom June 23, 2009
An electronic device comprises a semiconductive material containing a homopolyacene of Formula (I): ##STR00001## wherein R is a suitable hydrocarbon, a halogen, or a heteroatom containing group; each R' and R'' are independently a suitable hydrocarbon, a heteroatom containing group,
7517945 Polythiophenes and devices thereof April 14, 2009
Polythiophenes of the formula ##STR00001## wherein R is a side chain; m is the number of substituents; A is a divalent linkage; x, y and z represent, respectively, the numbers of R substituted thienylene, unsubstituted thienylene, and divalent linkages A in the monomer segment with
7517477 Polydiazaacenes and electronic devices generated therefrom April 14, 2009
An electronic device, such as a thin film transistor, containing a polymer of the formula or structure ##STR00001## wherein at least one of each R, R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5 and R.sub.6 is independently hydrogen, alkyl, aryl, alkoxy, halogen, arylalkyl, cyano, or nitro
7517476 Polydiazaacenes April 14, 2009
A polymer represented by Formula or structure (I) ##STR00001## wherein at least one of each R, R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5, and R.sub.6 is independently hydrogen, alkyl, aryl, arylalkyl, alkoxy, halogen, cyano, or nitro; x, y, a and b represent the number of groups a
7511343 Thin film transistor March 31, 2009
A thin film transistor is disclosed comprising a substrate, a dielectric layer, and a semiconductor layer. The semiconductor layer, which is crystalline zinc oxide preferentially oriented with the c-axis perpendicular to the plane of the dielectric layer or substrate, is prepared by
7491646 Electrically conductive feature fabrication process February 17, 2009
A process for fabricating an electrically conductive feature comprising: (a) liquid depositing a low viscosity composition comprising starting ingredients including an organic anine, a silver compound, and optionally an organic acid, to result in a deposited composition; and (b) heating
7491575 Fabricating zinc oxide semiconductor using hydrolysis February 17, 2009
A process for fabricating at least one semiconductor layer of an electronic device including: performing on a composition including a hydrolyzable zinc compound a number of activities including: (a) hydrolyzing at least a portion of the hydrolyzable zinc compound to form zinc oxide;
7456424 Thin film transistors including indolocarbozoles November 25, 2008
A thin film transistor composed of a semiconductor layer including an optionally substituted indolocarbazole.
7449715 Poly[bis(ethynyl)heteroacene]s and electronic devices generated therefrom November 11, 2008
An electronic device comprising a polymer of Formula or structure (I) ##STR00001## wherein R.sub.1 is hydrogen, halogen, a suitable hydrocarbon, or a heteroatom containing group; R.sub.2 is hydrogen, a suitable hydrocarbon, a heteroatom containing group, or a halogen; R.sub.3 and R.
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