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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Olgado; Donald
Address:
Palo Alto, CA
No. of patents:
9
Patents:












Patent Number Title Of Patent Date Issued
7993485 Methods and apparatus for processing a substrate August 9, 2011
Apparatus and methods adapted to polish an edge of a substrate include a polishing film, a frame adapted to tension and load the polishing film so that at least a portion of the film is supported in a plane, and a substrate rotation driver adapted to rotate a substrate against the plane
7232363 Polishing solution retainer June 19, 2007
A substrate polishing apparatus and method are described. A base includes at least one movable platen to engage a polishing pad. At least one carrier head assembly presses a substrate against the polishing pad substantially within a polishing area during a polishing operation. A poli
6935466 Lift pin alignment and operation methods and apparatus August 30, 2005
A lifting mechanism includes a plurality of lift pins which may be driven separately and independently upward to engage an alignment surface of the chamber using ambient atmospheric pressure as the chamber is evacuated by a pump. In the illustrated embodiment, each lift pin includes a pi
6516815 Edge bead removal/spin rinse dry (EBR/SRD) module February 11, 2003
The present invention provides an apparatus for etching a substrate, comprising: a container; a substrate support disposed in the container; a rotation actuator attached to the substrate support; and a fluid delivery assembly disposed in the container to deliver an etchant to a periphera
6270687 RF plasma method August 7, 2001
An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the ch
6267853 Electro-chemical deposition system July 31, 2001
The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The elec
6071372 RF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber June 6, 2000
An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the ch
5885358 Gas injection slit nozzle for a plasma process reactor March 23, 1999
A gas injection system for injecting gases into a plasma reactor having a vacuum chamber with a sidewall, a pedestal for holding a semiconductor wafer to be processed, and a RF power applicator for applying RF power into the chamber. The gas injection system includes at least one gas
5817534 RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers October 6, 1998
The invention is carried out in a plasma reactor for processing a semiconductor wafer, the plasma reactor having a chamber for containing a processing gas and having a conductor connected to an RF power source for coupling RF power into the reactor chamber to generate from the processing










 
 
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