| Patent Number |
Title Of Patent |
Date Issued |
| 6093243 |
Semiconductor device and its fabricating method |
July 25, 2000 |
| A single crystal and a polycrystal having an excellent crystal quality and providing a highly reliable semiconductor device are formed by solid phase growth at low temperatures. An amorphous thin film is deposited on a substrate such that an average inter-atomic distance of main constitu |
| 6066872 |
Semiconductor device and its fabricating method |
May 23, 2000 |
| A single crystal and a polycrystal having an excellent crystal quality and providing a highly reliable semiconductor device are formed by solid phase growth at low temperatures. An amorphous thin film is deposited on a substrate such that an average inter-atomic distance of main constituent |
| 5948205 |
Polishing apparatus and method for planarizing layer on a semiconductor wafer |
September 7, 1999 |
| To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metals duri |
| 5914275 |
Polishing apparatus and method for planarizing layer on a semiconductor wafer |
June 22, 1999 |
| To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metals duri |
| 5888338 |
Magnetron plasma processing apparatus and processing method |
March 30, 1999 |
| The invention provides a novel magnetron plasma processing apparatus comprising the following, a vacuum chamber storing an etching object, the first electrode which is provided in the vacuum chamber and holds the etching object, the second electrode which is disposed in opposition from |
| 5879447 |
Semiconductor device and its fabricating method |
March 9, 1999 |
| A single crystal and a polycrystal having an excellent crystal quality and providing a highly reliable semiconductor device are formed by solid phase growth at low temperatures. An amorphous thin film is deposited on a substrate such that an average inter-atomic distance of main constitu |
| 5776557 |
Method for forming a film on a substrate by activating a reactive gas |
July 7, 1998 |
| A thin film forming method which comprises the steps of supporting a substrate to be treated, having a trench or an unevenness thereon, in a reaction vessel; introducing a reactive gas into the reaction vessel; activating the reactive gas to form a deposit species, the deposit species |
| 5775980 |
Polishing method and polishing apparatus |
July 7, 1998 |
| This invention provides a polishing method including the steps of forming a film to be polished on a substrate having a recessed portion in its surface so as to fill at least the recessed portion, and selectively leaving the film to be polished behind in the recessed portion by polis |
| 5733713 |
Method of manufacturing semiconductor device |
March 31, 1998 |
| A method of manufacturing a semiconductor device is disclosed. The method comprises the steps of forming carbon layer on a light-reflective layer or a transparent layer formed on a light-reflective layer, forming a photosensitive resin layer on the carbon layer, selectively radiating |
| 5731634 |
Semiconductor device having a metal film formed in a groove in an insulating film |
March 24, 1998 |
| The present invention provides a method of manufacturing a semiconductor device, including the steps of forming a metal oxide film made of a metal oxide having a decrease in standard free energy smaller than a decrease in standard free energy of hydrogen oxide or of carbon oxide, on an |
| 5707487 |
Method of manufacturing semiconductor device |
January 13, 1998 |
| According to this invention, a method of manufacturing a semiconductor device includes the steps of forming a carbon film on a surface of a substrate, forming a mask pattern on the carbon film, etching the carbon film along the mask pattern to form a carbon film pattern, and reactive |
| 5686151 |
Method of forming a metal oxide film |
November 11, 1997 |
| Disclosed is method of forming a metal oxide film including the steps of introducing a gas containing a metal compound having at least one element selected from the group consisting of carbon and a halogen element, into a process chamber accommodating a substrate, introducing a gas conta |
| 5679484 |
Exposure mask, exposure mask substrate, method for fabricating the same, and method for forming |
October 21, 1997 |
| An exposure mask having an excellent alignment accuracy between patterns, which is prepared by first forming on a light transmissive substrate a light shielding film or a semi-transparent film pattern (first pattern) somewhat larger than a desired dimension, forming thereon a semi-tr |
| 5661345 |
Semiconductor device having a single-crystal metal wiring |
August 26, 1997 |
| The method of producing a semiconductor device includes the steps of forming a groove having a predetermined pattern shape on the surface of a substrate; forming a metal film on the substrate while reaction with the surface of the substrate is suppressed; and agglomerating the metal film |
| 5660744 |
Plasma generating apparatus and surface processing apparatus |
August 26, 1997 |
| A surface processing apparatus comprises a container provided with a first electrode and a second electrode disposed opposite to the first electrode for supporting a substrate to be processed and filled with a gas at a reduced pressure, an electric field generator for generating an elect |
| 5660671 |
Magnetron plasma processing apparatus and processing method |
August 26, 1997 |
| A magnetron plasma processing apparatus includes, a vacuum chamber storing an etching object, a first electrode which is provided in the vacuum chamber and holds the etching object, a second electrode which is disposed in opposition from the first electrode and parallel with the first |
| 5658389 |
Thin film forming method and apparatus |
August 19, 1997 |
| According to a thin film forming method, at least one type of gas is activated to produce a plurality of species having positive or negative charges. The plurality of species pass through an electric field or magnetic field to extract specific species. The specific species are suppli |
| 5654237 |
Method of manufacturing semiconductor device |
August 5, 1997 |
| A method of manufacturing a semiconductor device includes the steps of forming a first insulating layer having a hole on a substrate, selectively forming a conductive layer in the hole, selectively forming a second insulating layer on the first insulating layer, patterning the second |
| 5641702 |
Method of making semiconductor integrated-circuit capacitor |
June 24, 1997 |
| A semiconductor integrated-circuit capacitor comprises a lower electrode formed on a semiconductor substrate, a capacitor insulating film formed on the lower electrode, and an upper electrode formed on the capacitor insulating film. The capacitor insulating film is made of a high-per |
| 5641581 |
Semiconductor device |
June 24, 1997 |
| Disclosed is a method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film exhibiting a low dielectric constant and a low hygroscopicity and acting as an insulating film for electrically isolating wirings included in a semiconductor de |
| 5639699 |
Focused ion beam deposition using TMCTS |
June 17, 1997 |
| According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate aroun |
| 5620815 |
Exposure mask, exposure mask substrate, method for fabricating the same, and method for forming |
April 15, 1997 |
| An exposure mask having an excellent alignment accuracy between patterns, which is prepared by first forming on a light transmissive substrate a light shielding film or a semi-transparent film pattern (first pattern) somewhat larger than a desired dimension, forming thereon a semi-tr |
| 5607718 |
Polishing method and polishing apparatus |
March 4, 1997 |
| This invention provides a polishing method including the steps of forming a film to be polished on a substrate having a recessed portion in its surface so as to fill at least the recessed portion, and selectively leaving the film to be polished behind in the recessed portion by polis |
| 5597341 |
Semiconductor planarizing apparatus |
January 28, 1997 |
| To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metal is du |
| 5591486 |
Method for forming a film on a substrate by activating a reactive gas |
January 7, 1997 |
| A thin film forming method which comprises the steps of supporting a substrate to be treated, having a trench or an unevenness thereon, in a reaction vessel; introducing a reactive gas into the reaction vessel; activating the reactive gas to form a deposit species, the deposit species |
| 5582640 |
Semiconductor device and its fabricating method |
December 10, 1996 |
| A single crystal and a polycrystal having an excellent crystal quality and providing a highly reliable semiconductor device are formed by solid phase growth at low temperatures. An amorphous thin film is deposited on a substrate such that an average inter-atomic distance of main constitu |
| 5561082 |
Method for forming an electrode and/or wiring layer by reducing copper oxide or silver oxide |
October 1, 1996 |
| The present invention provides a method of manufacturing a semiconductor device, including the steps of forming a metal oxide film made of a metal oxide having a decrease in standard free energy smaller than a decrease in standard free energy of hydrogen oxide or of carbon oxide, on an |
| 5547787 |
Exposure mask, exposure mask substrate, method for fabricating the same, and method for forming |
August 20, 1996 |
| An exposure mask having an excellent alignment accuracy between patterns, which is prepared by first forming on a light transmissive substrate a light shielding film or a semi-transparent film pattern (first pattern) somewhat larger than a desired dimension, forming thereon a semi-tr |
| 5514904 |
Semiconductor device with monocrystalline gate insulating film |
May 7, 1996 |
| A semiconductor device includes a monocrystalline silicon substrate, an insulating film consisting of a monocrystalline silicon oxide formed on the surface of the monocrystalline silicon substrate, and a conductive film formed on the insulating film. The monocrystalline silicon substrate |
| 5514425 |
Method of forming a thin film |
May 7, 1996 |
| A thin film-forming method according to the present invention is characterized by comprising the steps of introducing TiCl.sub.4, hydrogen, nitrogen and NF.sub.3 into a film-forming chamber containing a semiconductor substrate (1) having a groove made in its surface, after the chambe |
| 5503901 |
Surface treatment method and surface treatment apparatus |
April 2, 1996 |
| Etching selectivity is improved in a semiconductor process using a fluorocarbon gas. An energy incident to a substrate is controlled to have a value to cause transition from etching to deposition on a silicon nitride film, ions having (CF.sub.2).sub.n.sup.+ as a major component are |
| 5491339 |
Charged particle detection device and charged particle radiation apparatus |
February 13, 1996 |
| According to this invention, there is provided a charged particle detection device including a semiconductor substrate, an insulating film formed on the semiconductor substrate, an electrode formed on the insulating film, a member for forming a potential well, which is constituted by a d |
| 5474643 |
Plasma processing apparatus |
December 12, 1995 |
| A plasma processing apparatus has a process chamber for receiving an article to be processed, a monitoring window forming part of the peripheral wall of the process chamber, a pressure leading-out port, gates, and a plasma generating device for forming an electric field and generatin |
| 5470791 |
Method of manufacturing semiconductor device |
November 28, 1995 |
| A method of manufacturing a semiconductor device includes the steps of forming a first insulating layer having a hole on a substrate, selectively forming a conductive layer in the hole, selectively forming a second insulating layer on the first insulating layer, patterning the second |
| 5466942 |
Charged beam irradiating apparatus having a cleaning means and a method of cleaning a charged be |
November 14, 1995 |
| A charged beam irradiating apparatus, comprises a charged beam generating means, a vacuum chamber having a part exposed by the charged beam, the part exposed having contaminations deposited thereon, a gas introducing system connected to the chamber which includes a means for producing |
| 5466942 |
Charged beam irradiating apparatus having a cleaning means and a method of cleaning a charged be |
November 14, 1995 |
| A charged beam irradiating apparatus, comprises a charged beam generating means, a vacuum chamber having a part exposed by the charged beam, the part exposed having contaminations deposited thereon, a gas introducing system connected to the chamber which includes a means for producing |
| 5458919 |
Method for forming a film on a substrate by activating a reactive gas |
October 17, 1995 |
| A thin film forming method which comprises the steps of supporting a substrate to be treated, having a trench or an unevenness thereon, in a reaction vessel; introducing a reactive gas into the reaction vessel; activating the reactive gas to form a deposit species, the deposit species |
| 5445996 |
Method for planarizing a semiconductor device having a amorphous layer |
August 29, 1995 |
| To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metals duri |
| 5445710 |
Method of manufacturing semiconductor device |
August 29, 1995 |
| A dry-etching method comprising the steps of forming carbon film on a substrate to be etched, forming a resist pattern on said carbon thin film, selectively etching said carbon film using said resist pattern as a mask by a plasma of a gas mixture of a gas containing fluorine atoms and a |
| 5444207 |
Plasma generating device and surface processing device and method for processing wafers in a uni |
August 22, 1995 |
| A surface processing device and method for forming a magnetic field having a uniform strength over a wide area of an electrode surface to generate a uniform high density plasma over the overall surface of a wafer. The device comprises a vacuum container contains a first electrode and a |
| 5440157 |
Semiconductor integrated-circuit capacitor having a carbon film electrode |
August 8, 1995 |
| A semiconductor integrated-circuit capacitor comprises a lower electrode formed on a semiconductor substrate, a capacitor insulating film formed on the lower electrode, and an upper electrode formed on the capacitor insulating film. The capacitor insulating film is made of a high-per |
| 5437961 |
Method of manufacturing semiconductor device |
August 1, 1995 |
| A method of manufacturing a semiconductor device is disclosed. The method comprises the steps of forming carbon layer on a light-reflective layer or a transparent layer formed on a light-reflective layer, forming a photosensitive resin layer on the carbon layer, selectively radiating |
| 5429995 |
Method of manufacturing silicon oxide film containing fluorine |
July 4, 1995 |
| Disclosed is a method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film exhibiting a low dielectric constant and a low hygroscopicity and acting as an insulating film for electrically isolating wirings included in a semiconductor de |
| 5429730 |
Method of repairing defect of structure |
July 4, 1995 |
| According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate aroun |
| 5424246 |
Method of manufacturing semiconductor metal wiring layer by reduction of metal oxide |
June 13, 1995 |
| According to this invention, there is provided a method of forming a groove wiring layer, including the steps of forming a metal oxide film, consisting of a metal oxide having a decrease in standard free energy smaller than a decrease in standard free energy of a hydrogen oxide or of |
| 5413967 |
Method of manufacturing semiconductor devices |
May 9, 1995 |
| An organic silane compound gas and an oxidizing gas are introduced into a reaction vessel from each gas source. Further a gas containing at least one kind of halogen, for example carbon tetrafluoride, is decomposed into halogen radicals, etc., by microwave discharge, and introduced into |
| 5413663 |
Plasma processing apparatus |
May 9, 1995 |
| A wafer plasma-etching apparatus includes electron generating, accelerating and processing chambers. Electron are drawn out of plasma generated in the electron generating chamber, accelerated in the accelerating chamber and introduced, as an electron beam, into the process chamber. A sem |
| 5411631 |
Dry etching method |
May 2, 1995 |
| According to this invention, a dry etching method includes the step of sequentially forming an SiO.sub.2 film, an Al--Si--Cu thin film, and a photoresist on an Si substrate to sequentially form a mask pattern, the step of etching the Al--Si--Cu thin film by RIE using a gas mixture of |
| 5409862 |
Method for making aluminum single crystal interconnections on insulators |
April 25, 1995 |
| The method of producing a semiconductor device includes the steps of forming a groove having a predetermined pattern shape on the surface of a substrate; forming a metal film on the substrate while reaction with the surface of the substrate is suppressed; and agglomerating the metal film |
| 5407786 |
Method of forming a mask on a semiconductor substrate via photosensitive resin deposition, ammon |
April 18, 1995 |
| A photosensitive organic resin layer is formed on a semiconductor substrate. The resin layer is treated with ammonia before or after the resin layer is exposed. Then, the exposed organic resin layer is easily silylated. Due to the ammonia treatment, non-exposed portions of the organi |
