| Patent Number |
Title Of Patent |
Date Issued |
| 7619253 |
Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and m |
November 17, 2009 |
| There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. An amorphous semiconductor thin film is irradiated with ultraviolet light or infrared light, to obtain a crystalline semiconductor thin film (102). |
| 7576485 |
Image display device with narrow frame |
August 18, 2009 |
| The invention provides a display device having a structure for preventing a voltage drop of anode lines or cathode lines as well as realizing a narrow frame. According to the invention, a narrow frame can be realized and a voltage drop of a lead wiring can be suppressed by substituting a |
| 7574280 |
Automatic material handling system, production system for semiconductor device, and production m |
August 11, 2009 |
| It is an object to provide an AGV that enables preventing a substrate and a manufacturing system from being contaminated due to another substrate with an adhering contaminant generated in a manufacturing process, and also a production system for a semiconductor device and a production |
| 7553716 |
Method for manufacturing a semiconductor thin film |
June 30, 2009 |
| A little amount of nickel is introduced into an amorphous silicon film formed on a glass substrate to crystallize the amorphous silicon film by heating. In this situation, nickel elements remain in a crystallized silicon film. An amorphous silicon film is formed on the surface of the |
| 7510915 |
Semiconductor device and method of fabricating thereof |
March 31, 2009 |
| To realize TFT enabling high-speed operation by fabricating a crystalline semiconductor film in which positions and sizes of crystal grains are controlled and using the crystalline semiconductor film in a channel forming region of TFT, a film thickness is stepped by providing a stepped |
| 7476937 |
Semiconductor device and method of fabricating the same |
January 13, 2009 |
| A crystalline semiconductor film in which the position and size of a crystal grain is controlled is fabricated, and the crystalline semiconductor film is used for a channel formation region of a TFT, so that a high performance TFT is realized. An island-like semiconductor layer is ma |
| 7456371 |
Laser apparatus and laser annealing method |
November 25, 2008 |
| The present invention provides a laser apparatus including a transmission-variable mirror and a method for forming a semiconductor device using the apparatus. For crystallizing an amorphous semiconductor film by irradiation of laser beams, a top surface and a back surface of the amor |
| 7439667 |
Light emitting device with specific four color arrangement |
October 21, 2008 |
| It is an object of the invention to provide a light emitting device in which burden on a light emitting element having low luminous efficiency is relieved, and the deterioration of a light emitting element, the reduction in color reproduction due to the deteriorated light emitting el |
| 7439115 |
Semiconductor fabricating apparatus |
October 21, 2008 |
| Providing a semiconductor fabricating apparatus using a laser crystallization technique for enhancing the processing efficiency for substrate and for increasing the mobility of a semiconductor film. The semiconductor fabricating apparatus of multi-chamber system includes a film forma |
| 7439111 |
Semiconductor device and manufacturing method thereof |
October 21, 2008 |
| An object of the invention is to form an insulating film having favorable insulation and planarity. An insulating film is formed by performing heat treatment a resin containing a siloxane polymer after application, in an atmosphere including an inert gas as its main component and having |
| 7425743 |
Projection television set |
September 16, 2008 |
| Thin-film transistors constituting a liquid crystal module have a channel forming region that is a crystal structural body in which a plurality of rod-like or flat-rod-like crystals are arranged in a particular direction. In the thin-film transistors, deteriorations in device charact |
| 7410850 |
Heating treatment device, heating treatment method and fabrication method of semiconductor devic |
August 12, 2008 |
| To provide a method and a device for subjecting a film to be treated to a heating treatment effectively by a lamp annealing process, ultraviolet light is irradiated from the upper face side of a substrate where the film o be treated is formed and infrared light is irradiated from the |
| 7378126 |
Light-emitting device and method of manufacturing the same, and method of operating manufacturin |
May 27, 2008 |
| The inventors has been anticipated that there is no problem in employing electron gun deposition as a method of forming a metallic layer on the EL layer because the TFT is disposed below the ET layer in the active matrix light-emitting device. However, since the TFT is extremely sensitiv |
| 7338913 |
Semiconductor device, manufacturing method thereof, and electronic device |
March 4, 2008 |
| A laser annealing method for obtaining a crystalline semiconductor film having a large grain size is provided. Laser light is irradiated to the top surface and the bottom surface of an amorphous semiconductor film when crystallizing the amorphous semiconductor film by laser light irr |
| 7307007 |
Semiconductor device |
December 11, 2007 |
| An insulating film 103 for making an under insulating layer 104 is formed on a quartz or semiconductor substrate 100. Recesses 105a to 105d corresponding to recesses 101a to 101d of the substrate 100 are formed on the surface of the insulating film 103. The surface of this insulating |
| 7291967 |
Light emitting element including a barrier layer and a manufacturing method thereof |
November 6, 2007 |
| According to the invention, an insulating or semi-insulating barrier layer which has a thickness where a tunnel current can flow through is provided between a hole injection electrode and an organic compound layer with hole transport characteristics (a hole injection layer or a hole |
| 7235828 |
Semiconductor device with residual nickel from crystallization of semiconductor film |
June 26, 2007 |
| It is an object to obtain a crystalline silicon film having preferable characteristics for a thin film transistor.A crystalline silicon film having improved crystallinity is obtained by the following steps: forming a silicon nitride film substantially in contact with an amorphous silicon |
| 7195801 |
Manufacturing process for storing and transferring evaporation material |
March 27, 2007 |
| A manufacturing system capable of enhancing reliability and luminance of a light emitting element is provided which uses an EL material of very high purity in evaporation. The system is also capable of using an EL material efficiently. Instead of a glass jar, a container (first container |
| 7192813 |
Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and m |
March 20, 2007 |
| There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. An amorphous semiconductor thin film is irradiated with ultraviolet light or infrared light, to obtain a crystalline semiconductor thin film (102). |
| 7141461 |
Method for manufacturing a semiconductor device |
November 28, 2006 |
| In a method for crystallizing an amorphous silicon film by a heat treatment that is effected for a duration of about 4 hours at about 550.degree. C. using a catalyst element for accelerating the crystallization, the quantity of the catalyst element to be introduced into the amorphous |
| 7105048 |
Laser irradiation apparatus |
September 12, 2006 |
| Each region, which should be left on a substrate after patterning, of a semiconductor film is grasped in accordance with a mask. Then, each region to be scanned with laser light is determined so that at least the region to be obtained through the patterning is crystallized, and a beam |
| 7064016 |
Semiconductor device and method of fabricating thereof |
June 20, 2006 |
| To realize TFT enabling high-speed operation by fabricating a crystalline semiconductor film in which positions and sizes of crystal grains are controlled and using the crystalline semiconductor film in a channel forming region of TFT, a film thickness is stepped by providing a stepped |
| 7058468 |
Automatic material handling system, production system for semiconductor device, and production m |
June 6, 2006 |
| It is an object to provide an AGV that enables preventing a substrate and a manufacturing system from being contaminated due to another substrate with an adhering contaminant generated in a manufacturing process, and also a production system for a semiconductor device and a production |
| 7037809 |
Method of manufacturing semiconductor device using a laser irradiation process |
May 2, 2006 |
| The present invention provides a semiconductor device manufacturing method where a beam spot is formed by having respective beam spots of a plurality of laser lights overlap each other on a semiconductor film using an optical system. Crystallinity, in a region determined by pattern i |
| 7022590 |
Method for forming a semiconductor device using crystals of crystal growth |
April 4, 2006 |
| An insulating film 103 for making an under insulating layer 104 is formed on a quartz or semiconductor substrate 100. Recesses 105a to 105d corresponding to recesses 101a to 101d of the substrate 100 are formed on the surface of the insulating film 103. The surface of this insulating |
| 6962860 |
Method of manufacturing a semiconductor device |
November 8, 2005 |
| To provide a continuous-oscillating laser apparatus capable of improving the efficiency of substrate treatment, a method of irradiating a laser beam, and a method of manufacturing a semiconductor device using the laser apparatus. Of the entire semiconductor film, a portion that needs to |
| 6911698 |
Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and m |
June 28, 2005 |
| There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. An amorphous semiconductor thin film is irradiated with ultraviolet light or infrared light, to obtain a crystalline semiconductor thin film (102). |
| 6890805 |
Method of manufacturing semiconductor device including thin film transistor over thermal oxidati |
May 10, 2005 |
| When a crystalline semiconductor thin film formed by using a catalytic element for facilitating crystallization is subjected to a heat treatment in an atmosphere containing a halogen element at a temperature exceeding 700.degree. C., a crystal structure in which crystal grain boundaries |
| 6876038 |
Projection TV |
April 5, 2005 |
| Thin-film transistors constituting a liquid crystal module have a channel forming region that is a crystal structural body in which a plurality of rod-like or flat-rod-like crystals are arranged in a particular direction. In the thin-film transistors, deteriorations in device characteris |
| 6864127 |
Semiconductor device and method of fabricating the same |
March 8, 2005 |
| There are disclosed techniques for providing a simplified process sequence for fabricating a semiconductor device. The sequence starts with forming an amorphous film containing silicon. Then, an insulating film having openings is formed on the amorphous film. A catalytic element is i |
| 6700096 |
LASER APPARATUS, LASER IRRADIATION METHOD, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, SEMICO |
March 2, 2004 |
| Provided are a laser apparatus of continuous oscillation that is capable of enhancing the efficiency of substrate processing, a laser irradiation method, and a manufacturing method for a semiconductor device using the laser apparatus. A portion of a semiconductor film that should be left |
