| Patent Number |
Title Of Patent |
Date Issued |
| RE38266 |
Method for fabricating semiconductor thin film |
October 7, 2003 |
| An object of the present invention is to provide a technology of reducing a nickel element in the silicon film which is crystallized by using nickel. An extremely small amount of nickel is introduced into an amorphous silicon film which is formed on the glass substrate. Then this amorpho |
| 7622740 |
Semiconductor device and method of fabricating the same |
November 24, 2009 |
| There is disclosed a method of fabricating TFTs having reduced interconnect resistance by having improved contacts to source/drain regions. A silicide layer is formed in intimate contact with the source/drain regions. The remaining metallization layer is selectively etched to form a |
| 7612376 |
Semiconductor device |
November 3, 2009 |
| A systemized active matrix display in which a pixel matrix circuit, a driver circuit and a logic circuit are mounted on the same substrate, is formed. A TFT of the present invention has such characteristics as to be able to operate in a wide driving frequency range of 0.05 to 2 GHz, and |
| 7573110 |
Method of fabricating semiconductor devices |
August 11, 2009 |
| Method of fabricating TFTs (thin-film transistors) having a crystallized silicon film and a gate-insulating film. First, an amorphous silicon film is formed on an insulating substrate. A first dielectric film is formed from silicon oxide on the amorphous silicon film. Holes are formed in |
| 7550325 |
Method of manufacturing an active matrix display device |
June 23, 2009 |
| A wiring line is electrically connected in parallel to an auxiliary wiring line via a plurality of contact holes. The contact holes are formed through an insulating film and arranged in vertical direction to the wiring line. Since the auxiliary wiring line is formed in the same layer |
| 7485898 |
Method of manufacturing semiconductor devices |
February 3, 2009 |
| Subjected to obtain a crystalline TFT which simultaneously prevents increase of OFF current and deterioration of ON current. A gate electrode of a crystalline TFT is comprised of a first gate electrode and a second gate electrode formed in contact with the first gate electrode and a gate |
| 7482627 |
Semiconductor device, and method of fabricating the same |
January 27, 2009 |
| A crystalline semiconductor film in which the locations and sizes of crystal grains have been controlled, is prepared, and a TFT capable of high speed operation is realized by employing the crystalline semiconductor film as the channel forming region of the TFT. An organic resin film |
| 7476576 |
Method of fabricating a semiconductor device |
January 13, 2009 |
| A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {110} plane is used. |
| 7473971 |
Method of fabricating a semiconductor device |
January 6, 2009 |
| A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {110} plane is used. |
| 7473592 |
Method of fabricating a semiconductor device |
January 6, 2009 |
| A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {110} plane is used. |
| 7470575 |
Process for fabricating semiconductor device |
December 30, 2008 |
| A process for fabricating a semiconductor device including the steps of: introducing into an amorphous silicon film, a metallic element which accelerates the crystallization of the amorphous silicon film; applying heat treatment to the amorphous silicon film to obtain a crystalline s |
| 7462517 |
Electro-optical device and semiconductor circuit |
December 9, 2008 |
| A high performance circuit is formed by using a TFT with less fluctuation in characteristics, and a semiconductor device including such a circuit is formed. When the TFT is formed, first, a base film and a semiconductor film are continuously formed on a quartz substrate without exposing |
| 7456056 |
Semiconductor device and method for fabricating the same |
November 25, 2008 |
| A novel and very useful method for forming a crystal silicon film by introducing a metal element which promotes crystallization of silicon to an amorphous silicon film and for eliminating or reducing the metal element existing within the crystal silicon film thus obtained is provided |
| 7453088 |
Electro-optical device and manufacturing method thereof |
November 18, 2008 |
| A semiconductor device that uses a high reliability TFT structure is provided. The gate electrode of an n-channel type TFT is formed by a first gate electrode and a second gate electrode that covers the first gate electrode. LDD regions have portions that overlap the second gate elec |
| 7446340 |
Method of manufacturing thin film transistor |
November 4, 2008 |
| The object of the present invention is to form a low-concentration impurity region with good accuracy in a top gate type TFT. Phosphorus is added to a semiconductor layer by using a pattern made of a conductive film as a mask to form an N-type impurity region in a self-alignment mann |
| 7429751 |
Method of manufacturing a semiconductor device |
September 30, 2008 |
| There is provided a method of manufacturing a semiconductor device having a TFT with sufficient characteristics and little fluctuation by accurately controlling the addition amount of impurity ions to the semiconductor layer using an ion doping device. A semiconductor device having a |
| 7420211 |
Wiring line and manufacture process thereof, and semiconductor device and manufacturing process |
September 2, 2008 |
| To provide a technique for manufacturing a wiring line having a low resistance and a high heat resistance so as to make an active matrix type display device larger and finer. The wiring line is constructed of a laminated structure of a refractory metal, a low resistance metal and a r |
| 7417253 |
Semiconductor device and manufacturing method therefor |
August 26, 2008 |
| An active layer of an NTFT includes a channel forming region, at least a first impurity region, at least a second impurity region and at least a third impurity region therein. Concentrations of an impurity in each of the first, second and third impurity regions increase as distances from |
| 7414288 |
Semiconductor device having display device |
August 19, 2008 |
| A semiconductor integrated circuit having a high withstand voltage TFT and a TFT which is capable of operating at high speed in a circuit of thin film transistors (TFT) and methods for fabricating such circuit will be provided. A gate insulating film of the TFT required to operate at hig |
| 7402471 |
Semiconductor device and method for manufacturing the same |
July 22, 2008 |
| A semiconductor device using a crystalline semiconductor film is manufactured. The crystalline semiconductor film is formed by providing an amorphous silicon film with a catalyst metal for promoting a crystallization thereof and then heated for performing a thermal crystallization, f |
| 7397518 |
Active matrix liquid crystal with capacitor below disclination region |
July 8, 2008 |
| An conductive coating serves as a light shield film and is kept at a give voltage. A metal interconnection is located in the same layer as a source line and connected to the drain of a thin-film transistor. An interlayer insulating film is constituted of at least lower and upper insulati |
| 7391054 |
Semiconductor device and manufacturing method thereof |
June 24, 2008 |
| The active layer of an n-channel TFT is formed with a channel forming region, a first impurity region, a second impurity region and a third impurity region. In this case, the concentration of the impurities in each of the impurity regions is made higher as the region is remote from t |
| 7391051 |
Semiconductor device forming method |
June 24, 2008 |
| In thin film transistors (TFTs) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain |
| 7374978 |
Method of manufacturing semiconductor device |
May 20, 2008 |
| A mask is formed selectively on a crystalline silicon film containing a catalyst element, and an amorphous silicon film is formed so as to cover the mask. Phosphorus is implanted into the amorphous silicon film and the portion of the crystalline silicon film which is not covered with the |
| 7358163 |
Semiconductor device and method for fabricating the same |
April 15, 2008 |
| A novel and very useful method for forming a crystal silicon film by introducing a metal element which promotes crystallization of silicon to an amorphous silicon film and for eliminating or reducing the metal element existing within the crystal silicon film thus obtained is provided |
| 7339235 |
Semiconductor device having SOI structure and manufacturing method thereof |
March 4, 2008 |
| A fine semiconductor device having a short channel length while suppressing a short channel effect. Linearly patterned or dot-patterned impurity regions 104 are formed in a channel forming region 103 so as to be generally parallel with the channel direction. The impurity regions 104 |
| 7326604 |
Semiconductor device and method of manufacturing the same |
February 5, 2008 |
| In a semiconductor device using a crystalline semiconductor film on a substrate 106 having an insulating surface, impurities are locally implanted into an active region 102 to form a pinning region 104. The pinning region 104 suppresses the spread of a depletion layer from the drain |
| 7323717 |
Semiconductor device |
January 29, 2008 |
| A wiring line to which a high-frequency signal is applied is electrically connected in parallel to an auxiliary, wiring line via a plurality of contact holes. The contact holes are formed through an interlayer insulating film and arranged in vertical direction to the wiring line. Sin |
| 7300826 |
Manufacturing method of semiconductor and manufacturing method of semiconductor device |
November 27, 2007 |
| The nickel element is provided selectively, i.e., adjacent to part of the surface of an amorphous silicon film in a long and narrow opening. The amorphous silicon film is irradiated with linear infrared light beams emitted from respective linear infrared lamps while scanned with the |
| 7294535 |
Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and m |
November 13, 2007 |
| There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A heat treatment is carried out for an amorphous semiconductor thin film, to thereby obtain a crystalline semiconductor thin film. After the cryst |
| 7282398 |
Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and me |
October 16, 2007 |
| There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. An amorphous semiconductor thin film is irradiated with ultraviolet light or infrared light, to obtain a crystalline semiconductor thin film (102). |
| 7256760 |
Semiconductor device |
August 14, 2007 |
| A systemized active matrix display in which a pixel matrix circuit, a driver circuit and a logic circuit are mounted on the same substrate, is formed. A TFT of the present invention has such characteristics as to be able to operate in a wide driving frequency range of 0.05 to 2 GHz, and |
| 7253441 |
Method of manufacturing thin film transistor |
August 7, 2007 |
| The object of the present invention is to form a low-concentration impurity region with good accuracy in a top gate type TFT. Phosphorus is added to a semiconductor layer by using a pattern made of a conductive film as a mask to form an N-type impurity region in a self-alignment mann |
| 7244962 |
Method of manufacturing semiconductor devices |
July 17, 2007 |
| Subjected to obtain a crystalline TFT which simultaneously prevents increase of OFF current and deterioration of ON current. A gate electrode of a crystalline TFT is comprised of a first gate electrode and a second gate electrode formed in contact with the first gate electrode and a gate |
| 7235810 |
Semiconductor device and method of fabricating the same |
June 26, 2007 |
| There is provided a crystalline TFT in which reliability comparable to or superior to a MOS transistor can be obtained and excellent characteristics can be obtained in both an on state and an off state. A gate electrode of the crystalline TFT is formed of a laminate structure of a fi |
| 7223666 |
Semiconductor device that includes a silicide region that is not in contact with the lightly dop |
May 29, 2007 |
| There is disclosed a method of fabricating TFTs having reduced interconnect resistance by having improved contacts to source/drain regions. A silicide layer is formed in intimate contact with the source/drain regions. The remaining metallization layer is selectively etched to form a |
| 7214574 |
Heating treatment device, heating treatment method and fabrication method of semiconductor devic |
May 8, 2007 |
| To provide a method and a device for subjecting a film to be treated to a heating treatment effectively by a lamp annealing process, ultraviolet light is irradiated from the upper face side of a substrate where the film to be treated is formed and infrared light is irradiated from the |
| 7202497 |
Semiconductor device |
April 10, 2007 |
| A semiconductor device and a process for producing the same, the semiconductor device comprising two conductive layers provided as separate layers, and an insulating layer sandwiched by the two conductive layers, in which the two conductive layers are electrically connected to each o |
| 7198991 |
Method of manufacturing an active matrix display device |
April 3, 2007 |
| A wiring line to which a high-frequency signal is applied is electrically connected in parallel to an auxiliary wiring line via a plurality of contact holes. The contact holes are formed through an interlayer insulating film and arranged in vertical direction to the wiring line. Sinc |
| 7192865 |
Semiconductor device and process for producing the same |
March 20, 2007 |
| A semiconductor device and a process for producing the same, the semiconductor device comprising two conductive layers provided as separate layers, and an insulating layer sandwiched by the two conductive layers, in which the two conductive layers are electrically connected to each o |
| 7186601 |
Method of fabricating a semiconductor device utilizing a catalyst material solution |
March 6, 2007 |
| A very thin oxide film is formed on an amorphous silicon film that is formed on a glass substrate, and an aqueous solution such as an acetate solution added with a catalyst element such as nickel by 10 to 200 ppm (adjustment needed) is dropped thereon. After the structure is held in |
| 7186597 |
Method of manufacturing transistors |
March 6, 2007 |
| A mask is formed selectively on a crystalline silicon film containing a catalyst element, and an amorphous silicon film is formed so as to cover the mask. Phosphorus is implanted into the amorphous silicon film and the portion of the crystalline silicon film which is not covered with the |
| 7173280 |
Electro-optical device and manufacturing method thereof |
February 6, 2007 |
| A semiconductor device that uses a high reliability TFT structure is provided. The gate electrode of an n-channel type TFT is formed by a first gate electrode and a second gate electrode that covers the first gate electrode. LDD regions have portions that overlap the second gate elec |
| 7153729 |
Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and m |
December 26, 2006 |
| There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A catalytic element for facilitating crystallization of an amorphous semiconductor thin film is added to the amorphous semiconductor thin film, an |
| 7141821 |
Semiconductor device having an impurity gradient in the impurity regions and method of manufactu |
November 28, 2006 |
| The active layer of an n-channel TFT is formed with a channel forming region, a first impurity region, a second impurity region and a third impurity region. In this case, the concentration of the impurities in each of the impurity regions is made higher as the region is remote from t |
| 7141462 |
Substrate of semiconductor device and fabrication method thereof as well as semiconductor device |
November 28, 2006 |
| There are provided a substrate of a semiconductor device and a fabrication method thereof which suppress impurity from turning around from a glass or quartz substrate in fabrication steps of a TFT. An insulating film is deposited so as to surround the glass substrate by means of reduced |
| 7138658 |
Semiconductor device and method of manufacturing the same |
November 21, 2006 |
| A semiconductor device having performance comparable with a MOSFET is provided. An active layer of the semiconductor device is formed by a crystalline silicon film crystallized by using a metal element for promoting crystallization, and further by carrying out a heat treatment in an |
| 7135741 |
Method of manufacturing a semiconductor device |
November 14, 2006 |
| A first heat treatment for crystallization is implemented after introducing nickel to an amorphous silicon film 103 disposed on a quartz substrate 101. A crystal silicon film 105 is obtained by this heat treatment. Then, a oxide film 106 is formed by wet oxidation. At this time, the |
| 7135707 |
Semiconductor device having insulated gate electrode |
November 14, 2006 |
| An insulated-gate field effect transistor with the structure capable of weakening an electric field near or around the drain thereof. To this end, the transistor of the top gate type has its gate electrode which is formed of two kinds of metal layers (4, 5) capable of being anodized |
| 7122450 |
Process for manufacturing a semiconductor device |
October 17, 2006 |
| A first amorphous semiconductor film is formed on an insulating surface. A catalyst element for promoting crystallization is added thereto. Thereafter, by a first heat treatment in an inert gas, a first crystalline semiconductor film is formed. A barrier layer and a second semiconduc |
