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Inventor:
Ohsawa; Youichi
Address:
Joetsu, JP
No. of patents:
31
Patents:












Patent Number Title Of Patent Date Issued
8173354 Sulfonium salt, resist composition, and patterning process May 8, 2012
A sulfonium salt having a triphenylsulfonium cation and a sulfite anion within the molecule is best suited as a photoacid generator in chemically amplified resist compositions. Upon exposure to high-energy radiation, the sulfonium salt generates a sulfonic acid, which facilitates efficie
8114571 Photoacid generator, resist composition, and patterning process February 14, 2012
Photoacid generators generate sulfonic acids of formula (1a) or (1b) upon exposure to high-energy radiation. R.sup.1--COOCH.sub.2CF.sub.2SO.sub.3.sup.-H.sup.+ (1a) R.sup.1--O--COOCH.sub.2CF.sub.2SO.sub.3.sup.-H.sup.+ (1b) R.sup.1 is a monovalent C.sub.20-C.sub.50 hydrocarbon group
8114570 Photoacid generator, resist composition, and patterning process February 14, 2012
Photoacid generators generate sulfonic acids of formula (1a) upon exposure to high-energy radiation. ROC(.dbd.O)R.sup.1--COOCH.sub.2CF.sub.2SO.sub.3.sup.-H.sup.+ (1a) RO is OH or C.sub.1-C.sub.20 organoxy, R.sup.1 is a divalent C.sub.1-C.sub.20 aliphatic group or forms a cyclic stru
8105748 Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning pr January 31, 2012
A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R.sup.1 is H, F, methyl or trifluoromethyl, R.sup.2, R.sup.3 and R.sup.4 are C.sub.1-C.sub.10 alkyl, alkenyl or oxoalkyl or C.sub.6-C.sub.18 aryl, aralkyl or aryloxoalkyl, or two of R.sup.2, R.sup.
8062828 Positive resist composition and patterning process November 22, 2011
A positive resist composition comprises a polymer comprising recurring units having a sulfonium salt incorporated therein as a base resin which becomes soluble in alkaline developer under the action of acid. The polymer generates a strong sulfonic acid upon exposure to high-energy ra
8057985 Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning pr November 15, 2011
A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R.sup.1 is H, F, methyl or trifluoromethyl, R.sup.2, R.sup.3 and R.sup.4 are C.sub.1-C.sub.10 alkyl, alkenyl or oxoalkyl or C.sub.6-C.sub.18 aryl, aralkyl or aryloxoalkyl, or two of R.sup.2, R.sup.
8048610 Sulfonium salt-containing polymer, resist composition, and patterning process November 1, 2011
A polymer comprising recurring units having formulae (1), (2) and (3) is provided as well as a chemically amplified resist composition comprising the same. R.sup.1 is H, F, CH.sub.3 or CF.sub.3, Rf is H, F, CF.sub.3 or C.sub.2F.sub.5, A is an optionally fluorine or oxygen-substituted
8039198 Sulfonium salt-containing polymer, resist composition, and patterning process October 18, 2011
A polymer comprising recurring units of a sulfonium salt represented by formula (1) is provided as well as a chemically amplified resist composition comprising the same. R.sup.1 is H, F, methyl or trifluoromethyl, R.sup.2 to R.sup.4 are C.sub.1-C.sub.10 alkyl or alkoxy, R.sup.5 is C.
8030515 Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning proce October 4, 2011
Sulfonate salts have the formula: HOCH.sub.2CH.sub.2CF.sub.2CF.sub.2SO.sub.3.sup.-M.sup.+ wherein M.sup.+ is a Li, Na, K, ammonium or tetramethylammonium ion. Onium salts, oxime sulfonates and sulfonyloxyimides derived from these salts are effective photoacid generators in chemically
8021822 Positive resist compositions and patterning process September 20, 2011
A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units, represented by formula (1). The acid generator (B) is a
8017302 Positive resist compositions and patterning process September 13, 2011
A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units, represented by formula (1). The acid generator (B) is a
7993811 Positive resist compositions and patterning process August 9, 2011
A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units, represented by formula (1). The acid generator (B) is a
7977027 Resist composition and patterning process July 12, 2011
A chemically amplified positive resist composition comprises a compound having an amine oxide structure as a basic component, a base resin, a photoacid generator, and an organic solvent. The resist composition exhibits a high resolution, significantly prevents a line pattern from col
7928262 Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning proce April 19, 2011
Sulfonate salts have the formula: HOCH.sub.2CH.sub.2CF.sub.2CF.sub.2SO.sub.3.sup.-M.sup.+ wherein M.sup.+ is a Li, Na, K, ammonium or tetramethylammonium ion. Onium salts, oxime sulfonates and sulfonyloxyimides derived from these salts are effective photoacid generators in chemically
7919226 Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning proce April 5, 2011
Sulfonate salts have the formula: CF.sub.3--CH(OCOR)--CF.sub.2SO.sub.3.sup.-M.sup.+ wherein R is C.sub.1-C.sub.20 alkyl or C.sub.6-C.sub.14 aryl, and M.sup.+ is a lithium, sodium, potassium, ammonium or tetramethylammonium ion. Onium salts, oximesulfonates and sulfonyloxyimides and o
7871761 Resist lower layer material, resist lower layer substrate comprising the material and method for January 18, 2011
Provided is a method for forming a resist lower layer material for use in a multilayer resist process, especially two-layer resist process or three-layer resist process, having a function of neutralizing an amine contaminant from a substrate, thereby reducing a harmful effect such as
7670751 Photoacid generator, resist composition, and patterning process March 2, 2010
Photoacid generators generate sulfonic acids of formula (1a) or (1c) upon exposure to high-energy radiation. R.sup.1--COOCH(CF.sub.3)CF.sub.2SO.sub.3.sup.-H.sup.+ (1a) R.sup.1--O--COOCH(CF.sub.3)CF.sub.2SO.sub.3.sup.-H.sup.+ (1c) R.sup.1 is a C.sub.20-C.sub.50 hydrocarbon group hav
7629108 Nitrogen-containing organic compound, resist composition and patterning process December 8, 2009
A resist composition comprising as a quencher a nitrogen-containing organic compound bearing a nitrogen-containing heterocycle and having a molecular weight of at least 380 exhibits a high resolution and satisfactory mask coverage dependence and is useful in microfabrication using el
7569326 Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process August 4, 2009
A sulfonium salt having a polymerizable anion generates a strong sulfonic acid upon exposure to high-energy radiation so that it facilitates effective scission of acid labile groups in chemically amplified resist compositions. It is useful as a monomer from which a base resin for use
7569324 Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning proce August 4, 2009
Sulfonate salts have the formula: R.sup.1COOCH.sub.2CH.sub.2CF.sub.2CF.sub.2SO.sub.3.sup.-M.sup.+ wherein R.sup.1 is alkyl, aryl or hetero-aryl, M.sup.+ is a Li, Na, K, ammonium or tetramethylammonium ion. Onium salts, oxime sulfonates and sulfonyloxyimides derived from these salts a
7556909 Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning proce July 7, 2009
Sulfonate salts have the formula: CF.sub.3--CH(OH)--CF.sub.2SO.sub.3.sup.-M.sup.+ wherein M.sup.+ is a Li, Na, K, ammonium or tetramethylammonium ion. Because of inclusion within the molecule of a hydroxyl group which is a polar group, the sulfonic acids are effective for restraining
7531290 Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning proce May 12, 2009
Sulfonate salts have the formula: R.sup.1SO.sub.3--CH(Rf)--CF.sub.2SO.sub.3.sup.-M.sup.+ wherein R.sup.1 is alkyl or aryl, Rf is H or trifluoromethyl, and M.sup.+ is a Li, Na, K, ammonium or tetramethylammonium ion. Onium salts, oximesulfonates and sulfonyloxyimides and other compoun
7527912 Photoacid generators, resist compositions, and patterning process May 5, 2009
Photoacid generators generate sulfonic acids of formula (1a) upon exposure to high-energy radiation. RC(.dbd.O)R.sup.1--COOCH(CF.sub.3)CF.sub.2SO.sub.3.sup.-H.sup.+ (1a) R is hydroxyl, alkyl, aryl, hetero-aryl, alkoxy, aryloxy or hetero-aryloxy, R.sup.1 is a divalent organic group w
7514202 Thermal acid generator, resist undercoat material and patterning process April 7, 2009
A thermal acid generator of generating an acid on heating above 100.degree. C. has formula: CF.sub.3CH(OCOR)CF.sub.2SO.sub.3.sup.-(R.sup.1).sub.4N.sup.+ wherein R is alkyl or aryl, R.sup.1 is hydrogen, alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl, or R.sup.1 may bond toget
7511169 Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning proce March 31, 2009
Sulfonate salts have the formula: CF.sub.3--CH(OCOR)--CF.sub.2SO.sub.3.sup.-M.sup.+ wherein R is C.sub.1-C.sub.20 alkyl or C.sub.6-C.sub.14 aryl, and M.sup.+ is a lithium, sodium, potassium, ammonium or tetramethylammonium ion. Onium salts, oximesulfonates and sulfonyloxyimides and o
7510816 Silicon-containing resist composition and patterning process March 31, 2009
A resist composition is provided comprising a polysiloxane, a specific acid generator, a nitrogen-containing organic compound, and a solvent. The resist composition exerts high-resolution performance without the problem of a T-top profile and is suited for the bilayer resist process
7498126 Photoacid generators, chemically amplified resist compositions, and patterning process March 3, 2009
A photoacid generator has formula (1). A chemically amplified resist composition comprising the photoacid generator has advantages including a high resolution, focus latitude, long-term PED dimensional stability, and a satisfactory pattern profile shape. When the photoacid generator is
7494760 Photoacid generators, chemically amplified resist compositions, and patterning process February 24, 2009
A photoacid generator has formula (1) wherein R is H, F, Cl, nitro, alkyl or alkoxy, n is 0 or 1, m is 1 or 2, r is an integer of 0-4, and r' is an integer of 0-5. A chemically amplified resist composition comprising the photoacid generator has advantages including a high resolution, foc
7335458 Chemically amplified positive resist composition and patterning process February 26, 2008
A chemically amplified positive resist composition is provided comprising (A) a resin containing acid labile groups other than acetal type which changes its solubility in an alkaline developer as a result of the acid labile groups being eliminated under the action of acid and (B) specifi
7312016 Chemically amplified positive resist composition and patterning process December 25, 2007
A chemically amplified positive resist composition comprising a specific 2,4,6-triisopropylbenzenesulfonate compound as a photoacid generator, a polymer which changes its solubility in an alkaline developer under the action of acid, and a basic compound has a high sensitivity, a high
7288363 Chemically amplified positive resist composition and patterning process October 30, 2007
A chemically amplified positive resist composition comprising a specific 2,4,6-triisopropylbenzenesulfonate compound as a photoacid generator, a polymer which changes its solubility in an alkaline developer under the action of acid, and a basic compound has a high sensitivity, a high










 
 
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