| Patent Number |
Title Of Patent |
Date Issued |
| 7554173 |
Semiconductor device |
June 30, 2009 |
| A semiconductor device accurately monitoring temperature of a semiconductor chip even in a noisy environment, while not requiring a highly accurate detection circuit. A PTC element is bonded onto an IGBT chip. Then, a constant current flows from a constant current source through the |
| 6967519 |
Drive circuit for a power semiconductor device |
November 22, 2005 |
| A drive circuit for a power semiconductor device includes: a sampling signal generating circuit for detecting that an input control signal instructs OFF and outputting a sampling signal at the time instant of start of a Miller period of time of an IGBT; a gate voltage detecting circu |
| 6906574 |
Drive circuit for driving power semiconductor device |
June 14, 2005 |
| A drive circuit includes a gate voltage detector that detects a gate-emitter voltage Vge that appears between the gate and emitter of a power semiconductor device throughout a detection time period during which a sampler allows the process of detecting the gate-emitter voltage Vge, a |
| 6836006 |
Semiconductor module |
December 28, 2004 |
| In an IGBT module which contains an IGBT device and a diode device connected to each other and accommodated in a case and which radiates heat generated in operation through a radiation board, an object is to reduce the area of the module in the lateral direction to achieve size reduction |
| 6580147 |
Semiconductor device having built-in capacitors |
June 17, 2003 |
| P-electrode 30a and N-electrode 31a of a semiconductor device 2, and capacitors 10 in a plate-like shape or a block-like shape respectively connected to U-phase 40, V-phase 41, and W-phase 42 having a switching element 20 and a diode 21 are built in a semiconductor device 2, and a si |
| 6236110 |
Power semiconductor module |
May 22, 2001 |
| A current detecting sensor includes parallel flat plates opposed in a substantially U-shape in cross-section. Since the flat plates are opposed to each other, the current detecting sensor has reduced inductance, significantly decreasing frequency dependency of outputs from detection |
| 6215185 |
Power semiconductor module |
April 10, 2001 |
| An object is to obtain long-term reliability of an electric connection in a power semiconductor module. In a power semiconductor module, the main circuit interconnection directly connected to a power semiconductor chip (3) is formed of a busbar (6) and the power semiconductor chip (3) an |
