| Patent Number |
Title Of Patent |
Date Issued |
| 7015504 |
Sidewall formation for high density polymer memory element array |
March 21, 2006 |
| Systems and methodologies are disclosed for increasing the number of memory cells associated with a lithographic feature. The systems comprise memory elements that are formed on the sidewalls of the lithographic feature by employing various depositing and etching processes. The side |
| 6836398 |
System and method of forming a passive layer by a CMP process |
December 28, 2004 |
| The present invention provides systems and methods that facilitate formation of semiconductor devices via planarization processes. The present invention utilizes dishing effects that typically occur during a chemical mechanical planarization (CMP) process. A reducing CMP process is p |
| 6803267 |
Silicon containing material for patterning polymeric memory element |
October 12, 2004 |
| The present invention provides a method to fabricate an organic memory device, wherein the fabrication method includes forming a lower electrode, depositing a passive material over the surface of the lower electrode, applying an organic semiconductor material over the passive material, a |
| 6798068 |
MOCVD formation of Cu2S |
September 28, 2004 |
| A system and methodology are disclosed for forming a passive layer on a conductive layer. The formation can be done during fabrication of an organic memory cell, where the passive layer generally includes a conductivity facilitating compound, such as copper sulfide (Cu.sub.2 S). The |
| 6787458 |
Polymer memory device formed in via opening |
September 7, 2004 |
| One aspect of the present invention relates to a method of fabricating a polymer memory device in a via. The method involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least one copper contact in the metal-containing layer, form |
| 6773954 |
Methods of forming passive layers in organic memory cells |
August 10, 2004 |
| Methods of making an organic memory cell made of two electrodes with a controllably conductive media between the two electrodes are disclosed. The controllably conductive Media contains an organic semiconductor layer and passive layer. In particular, novel methods of forming a electrode |
| 6656763 |
Spin on polymers for organic memory devices |
December 2, 2003 |
| A method of making organic memory cells made of two electrodes with a controllably conductivce media between the two electrodes is disclosed. The controllably conductive media contains an organic semiconductor layer and passive layer. The organic semiconductor layer is formed using spin- |
