| Patent Number |
Title Of Patent |
Date Issued |
| 5910342 |
Process for forming deposition film |
June 8, 1999 |
| A process for forming a deposition film on a substrate comprises introducing separately a precursor or activated species formed in a decomposition space (B) and activated species formed in a decomposition space (C), into the deposition space wherein the film is formed on the substrat |
| 4876185 |
Aluminum support for a photoconductive member |
October 24, 1989 |
| A photoconductive member has a support comprising aluminum as the main component and a photoconductive layer. The photoconductive layer is provided on the support and contains an amorphous material comprising silicon atoms as a matrix. The support comprises an aluminum alloy with a F |
| 4835005 |
Process for forming deposition film |
May 30, 1989 |
| A process for forming a deposition film on a substrate comprises introducing separately a precursor or activated species formed in a decomposition space (B) and activated species formed in a decomposition space (C), into the deposition space wherein the film is formed on the substrat |
| 4795688 |
Layered photoconductive member comprising amorphous silicon |
January 3, 1989 |
| A photoconductive member comprises a support for a photoconductive member and an amorphous layer having photoconductivity and containing an amorphous material comprising silicon atom as a matrix, said amorphous layer having a first layer region containing oxygen atoms and a second la |
| 4721664 |
Silicon film deposition from mixture of silanes |
January 26, 1988 |
| A process for producing a photoconductive member comprises forming a photoconductive layer on a substrate for formation of a photoconductive layer by introducing starting substances for formation of a photoconductive layer under gaseous state into a deposition chamber maintained unde |
| 4720443 |
Member having light receiving layer with nonparallel interfaces |
January 19, 1988 |
| A light-receiving member comprises a substrate for light-receiving member and a light-receiving layer of a multi-layer structure having a first layer comprising an amorphous material containing silicon atoms and germanium atoms, a second layer comprising an amorphous material contain |
| 4705735 |
Member having substrate with protruding surface portions and light receiving layer with amorphou |
November 10, 1987 |
| A light-receiving member comprises a substrate having a large number of protruding portions on a surface thereof, each of said protruding portions having at a predetermined cut position a sectional shape comprising a main projection and a subprojection, the main projection and the subpro |
| 4705734 |
Member having substrate with irregular surface and light receiving layer of amorphous silicon |
November 10, 1987 |
| A light-receiving member comprises a substrate having a large number of protruding portions on a surface thereof, each of said protruding portions having at a predetermined cut position a sectional shape comprising a main projection and a subprojection, the main projection and the subpro |
| 4705733 |
Member having light receiving layer and substrate with overlapping subprojections |
November 10, 1987 |
| A substrate for light-receiving members has a large number of protruding portions on a surface thereof, each of said protruding portions having at a predetermined cut position a sectional shape comprising a main projection and a subprojection, the main projection and the subprojection |
| 4705732 |
Member having substrate with projecting portions at surface and light receiving layer of amorpho |
November 10, 1987 |
| A light-receiving member comprises a substrate having a large number of protruding portions on a surface thereof, each of said protruding portions having at a predetermined cut position a sectional shape comprising a main projection and a subprojection, the main projection and the subpro |
| 4705731 |
Member having substrate with protruding surface light receiving layer of amorphous silicon and s |
November 10, 1987 |
| A light-receiving member comprises a substrate having a large number of protruding portions on a surface thereof, each of said protruding portions having at a predetermined cut position a sectional shape comprising a main projection and a subprojection, the main projection and the subpro |
| 4705730 |
Light-receiving member |
November 10, 1987 |
| A light-receiving member comprises a substrate having a large number of projection parts, whose cross-sectional shape at a given cross-sectional position is a projection shape formed of a main peak and an auxiliary peak as overlapped, on the surface of the substrate, and a light-receivin |
| 4702981 |
Photoconductive member and support for said photoconductive member |
October 27, 1987 |
| A photoconductive member has a support comprising aluminum as the main component and a photoconductive layer. The photoconductive layer is provided on the support and contains an amorphous material comprising silicon atoms as a matrix. The support comprises an aluminum alloy with a F |
| 4701393 |
Member with light receiving layer of A-SI(GE) and A-SI and having plurality of non-parallel inte |
October 20, 1987 |
| A light receiving member comprises a light receiving layer of a multi-layer structure having a first layer comprising an amorphous material containing silicon atoms and germanium atoms, a second layer comprising an amorphous material containing silicon atoms and exhibiting photoconductiv |
| 4701392 |
Member having light receiving layer with nonparallel interfaces and antireflection layer |
October 20, 1987 |
| A light receiving member comprises a substrate for light receiving member, a surface layer having reflection preventive function and a light receiving layer of a multi-layer structure having at least one photosensitive layer comprising an amorphous material containing silicon atoms o |
| 4696884 |
Member having photosensitive layer with series of smoothly continuous non-parallel interfaces |
September 29, 1987 |
| A light-receiving member comprises a light-receiving layer of a multi-layer structure having at least one photosensitive layer on a substrate, said photosensitive layer having at least one pair of non-parallel interfaces within a short range and said non-parallel interfaces being arrange |
| 4696883 |
Member having light receiving layer with smoothly connected non-parallel interfaces and surface |
September 29, 1987 |
| A light-receiving member comprises a substrate and a light-receiving layer of a multi-layer structure having at least one photosensitive layer and a surface layer having reflection preventive function provided successively from the substrate side; said light-receiving layer having at lea |
| 4696882 |
Member having light receiving layer with smoothly interconnecting nonparallel interfaces |
September 29, 1987 |
| A light-receiving member comprises a substrate and a light-receiving layer of a multi-layer structure having a first layer comprising an amorphous material containing silicon atoms and germanium atoms and a second layer comprising an amorphous material containing silicon atoms and exhibi |
| 4678733 |
Member having light receiving layer of A-Si: Ge (C,N,O) A-Si/surface antireflection layer with n |
July 7, 1987 |
| A light receiving member comprises a light receiving layer of a multi-layer structure having a first layer comprising an amorphous material containing silicon atoms and germanium atoms, a second layer comprising an amorphous material containing silicon atoms and exhibiting photoconductiv |
| 4675263 |
Member having substrate and light-receiving layer of A-Si:Ge film and A-Si film with non-paralle |
June 23, 1987 |
| A light-receiving member comprises light-receiving layer of a multi-layer structure having a first layer comprising an amorphous material containing silicon atoms and germanium atoms and a second layer comprising an amorphous material containing silicon atoms and exhibiting photocond |
| 4650736 |
Light receiving member having photosensitive layer with non-parallel interfaces |
March 17, 1987 |
| A light receiving member comprises a light receiving layer of a multi-layer structure having at least one photosensitive layer comprising an amorphous material containing silicon atoms on a substrate, said photosensitive layer having at least one pair of non-parallel interfaces within a |
| 4637972 |
Light receiving member having an amorphous silicon photoconductor |
January 20, 1987 |
| A light-receiving member has a substrate and a light receiving layer having photoconductivity containing an amorphous material comprising a matrix of silicon atoms provided on said substrate, said light receiving layer having, from the said support side with respect to the layer thicknes |
| 4637342 |
Vacuum processing apparatus |
January 20, 1987 |
| A vacuum processing apparatus for applying a vacuum working process to a substrate to be processed by a plurality of processing steps comprises vacuum containers exclusively for use for processing disposed in place for each of the processing steps, and a vacuum container exclusively for |
| 4636450 |
Photoconductive member having amorphous silicon matrix with oxygen and impurity containing regio |
January 13, 1987 |
| A photoconductive member comprises a support for a photoconductive member and an amorphous layer exhibiting photoconductivity and comprising an amorphous material comprising silicon atoms as a matrix and at least one member selected from the group consisting of hydrogen atoms and halogen |
| 4592985 |
Photoconductive member having amorphous silicon layers |
June 3, 1986 |
| A photoconductive member, is provided which has a support, a first layer having photoconductivity containing an amorphous material comprising silicon atoms as a matrix provided on said support and a second layer containing silicon atoms and carbon atoms as essential components provided |
| 4568626 |
Method for producing image forming member |
February 4, 1986 |
| A method for producing an image forming member having a deposited layer with photoconductivity formed on a support by introducing a starting material in gaseous state into a deposition chamber which is reduced to a desired pressure and exciting discharging in the gas atmosphere of said |
| 4555465 |
Photoconductive member of amorphous silicon |
November 26, 1985 |
| A photoconductive member comprising a support and a light receiving layer provided on said support, having photoconductivity containing silicon atoms as a matrix and at least hydrogen atoms as constituent atom, said light receiving layer having a layer region with depth profile such that |
| 4536459 |
Photoconductive member having multiple amorphous layers |
August 20, 1985 |
| A photoconductive member, comprises a support for a photoconductive member, a first amorphous layer exhibiting photoconductivity comprising an amorphous material containing silicon atoms as a martix, said first amorphous layer having a first layer region containing oxygen atoms in a |
| 4529679 |
Photoconductive member |
July 16, 1985 |
| A photoconductive member comprises a substrate and a light receiving layer having photoconductive provided on said support, comprising silicon atoms as a matrix and at least halogen atoms as constituent atoms said light receiving layer having a depth profile with respect to the layer thi |
| 4486521 |
Photoconductive member with doped and oxygen containing amorphous silicon layers |
December 4, 1984 |
| A photoconductive member comprises a support for a photoconductive member and an amorphous layer containing an amorphous material comprising silicon atom as a matrix and having photoconductivity, said amorphous layer comprising a first layer region containing oxygen atom as a constituent |
| 4468443 |
Process for producing photoconductive member from gaseous silicon compounds |
August 28, 1984 |
| A process for producing a photoconductive member, which comprises forming a photoconductive layer on a substrate for formation of a photoconductive layer by introducing starting substances for formation of a photoconductive layer under gaseous state into a deposition chamber maintain |
| 4460670 |
Photoconductive member with .alpha.-Si and C, N or O and dopant |
July 17, 1984 |
| A photoconductive member comprises a support for a photoconductive member and an amorphous layer having photoconductivity constituted of an amorphous material comprising silicon atoms as a matrix, said amorphous layer having a first layer region containing at least one kind of atoms |
| 4460669 |
Photoconductive member with .alpha.-Si and C, U or D and dopant |
July 17, 1984 |
| A photoconductive member comprises a support for a photoconductive member and an amorphous layer having photoconductivity constituted of an amorphous material comprising silicon atoms as a matrix, said amorphous layer having a first layer region containing as the constituent atom at |
| 4452874 |
Photoconductive member with multiple amorphous Si layers |
June 5, 1984 |
| A photoconductive member comprises a support for photoconductive member, an interface layer comprising an amorphous material represented by any of the formulas:(wherein X represents a halogen atom),a rectifying layer comprising an amorphous material containing atoms (A) belonging to the |
| 4450185 |
Process for forming amorphous silicon film |
May 22, 1984 |
| A process for forming a deposition film on a substrate comprising introducing a deposition film forming material in gaseous state into a deposition chamber, the inside pressure of which is reduced, and causing an electric discharge to take place in a gaseous atmosphere of said deposi |
| 4405656 |
Process for producing photoconductive member |
September 20, 1983 |
| A process for producing photoconductive members comprises evacuating a deposition chamber possible to evacuate, to a prescribed degree of vacuum; introducing silicon hydride compound gas, halogen-containing silicon compound gas, and diluent gas in a volume flow ratio of 4-30:2-60:36-81, |
