| Patent Number |
Title Of Patent |
Date Issued |
| 7234908 |
Apparatus for storing and moving a cassette |
June 26, 2007 |
| A cassette stocker includes a plurality of cassette storage shelves positioned adjacent a cleanroom wall and vertically disposed relative to a plurality of cassette docking stations, and a cassette mover to carry a cassette between the shelves and the docking stations. An interstation |
| 7042558 |
Eddy-optic sensor for object inspection |
May 9, 2006 |
| A sensor enables simultaneous or sequential eddy current and optical reflectance measurements of conducting film by providing an eddy current inspection coil and a first and a second optical fiber extending axially through the coil. The eddy current inspection coil is excited by a radio |
| 6955517 |
Apparatus for storing and moving a cassette |
October 18, 2005 |
| A cassette stocker includes a plurality of cassette storage shelves positioned adjacent a cleanroom wall and vertically disposed relative to a plurality of cassette docking stations, and a cassette mover to carry a cassette between the shelves and the docking stations. An interstation |
| 6783639 |
Coils for generating a plasma and for sputtering |
August 31, 2004 |
| A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a ta |
| 6654698 |
Systems and methods for calibrating integrated inspection tools |
November 25, 2003 |
| Systems, methods and computer program products are provided for calibrating integrated the inspection tools of one or more processing tools. In a first aspect, a system is provided that includes (1) a processing tool adapted to process substrates; (2) an integrated inspection tool couple |
| 6608495 |
Eddy-optic sensor for object inspection |
August 19, 2003 |
| A sensor enables simultaneous or sequential eddy current and optical reflectance measurements of conducting film by providing an eddy current inspection coil and a first and a second optical fiber extending axially through the coil. The eddy current inspection coil is excited by a radio |
| 6583509 |
Semiconductor processing techniques |
June 24, 2003 |
| The present invention provides a manufacturing environment (110) for a wafer fab, and an SPC environment (112) for setting control limits and acquiring metrology data of production runs. A computation environment (114) processes the SPC data, which are then analyzed in an analysis en |
| 6572321 |
Loader conveyor for substrate processing system |
June 3, 2003 |
| A loader conveyor adapted so as to receive a wafer carrier from a transfer conveyor and adapted to terminate at an intersection with a processing system, is provided. Thus, the need for a front-end loader robot may be eliminated. |
| 6514390 |
Method to eliminate coil sputtering in an ICP source |
February 4, 2003 |
| A magnetic shield to reduce sputtering of an RF coil for a plasma chamber in a semiconductor fabrication system is provided. The magnetic shield also reduces deposition of material onto the coil which in turn leads to a reduction in particulate matter shed by the coil onto the workpiece. |
| 6506009 |
Apparatus for storing and moving a cassette |
January 14, 2003 |
| A cassette stocker includes a plurality of cassette storage shelves positioned adjacent a cleanroom wall and vertically disposed relative to a plurality of cassette docking stations, and a cassette mover to carry a cassette between the shelves and the docking stations. An interstation |
| 6456894 |
Semiconductor processing techniques |
September 24, 2002 |
| The present invention provides a manufacturing environment (110) for a wafer fab, and an SPC environment (112) for setting control limits and acquiring metrology data of production runs. A computation environment (114) processes the SPC data, which are then analyzed in an analysis en |
| 6455921 |
Fabricating plug and near-zero overlap interconnect line |
September 24, 2002 |
| An electrically conductive plug on a semiconductor workpiece. A dielectric layer is deposited on the workpiece, and a cavity is etched in the dielectric. An etchant-resistant material is deposited on the wall of the cavity adjacent the cavity mouth so as to form an inwardly-extending |
| 6408220 |
Semiconductor processing techniques |
June 18, 2002 |
| The present invention provides a manufacturing environment (110) for a wafer fab, and an SPC environment (112) for setting control limits and acquiring metrology data of production runs. A computation environment (114) processes the SPC data, which are then analyzed in an analysis en |
| 6368469 |
Coils for generating a plasma and for sputtering |
April 9, 2002 |
| A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a ta |
| 6361618 |
Methods and apparatus for forming and maintaining high vacuum environments |
March 26, 2002 |
| Methods and Apparatus for forming and maintaining high vacuum environments are provided. In one aspect, a method is provided for forming and maintaining a vacuum in a processing chamber including evacuating the processing chamber with a vacuum pump to a first chamber pressure and rem |
| 6303395 |
Semiconductor processing techniques |
October 16, 2001 |
| The present invention provides a manufacturing environment (110) for a wafer fab, and an SPC environment (112) for setting control limits and acquiring metrology data of production runs. A computation environment (114) processes the SPC data, which are then analyzed in an analysis en |
| 6231725 |
Apparatus for sputtering material onto a workpiece with the aid of a plasma |
May 15, 2001 |
| An apparatus for sputtering material onto a workpiece, composed of: a chamber; a first target disposed in the chamber for sputtering material onto the workpiece; a holder for holding the workpiece in the chamber; a plasma generation area between the target and the holder; a coil for |
| 6228186 |
Method for manufacturing metal sputtering target for use in DC magnetron so that target has redu |
May 8, 2001 |
| Improved targets for use in DC_magnetron sputtering of aluminum or like metals are disclosed for forming metallization films having low defect densities. Methods for manufacturing and using such targets are also disclosed. Conductivity anomalies such as those composed of metal oxide |
| 6217721 |
Filling narrow apertures and forming interconnects with a metal utilizing a crystallographically |
April 17, 2001 |
| An aluminum sputtering process, particularly useful for filling vias and contacts of high aspect ratios formed through a dielectric layer and also usefull for forming interconnects that are highly resistant to electromigration. A liner or barrier layer is first deposited by a high-de |
| 6171455 |
Target for use in magnetron sputtering of aluminum for forming metallization films having low de |
January 9, 2001 |
| Improved targets for use in DC_magnetron sputtering of aluminum or like metals are disclosed for forming metallization films having low defect densities. Methods for manufacturing and using such targets are also disclosed. Conductivity anomalies such as those composed of metal oxide |
| 6126791 |
Target for use in magnetron sputtering of aluminum for forming metallization films having low de |
October 3, 2000 |
| Improved targets for use in DC.sub.-- magnetron sputtering of aluminum or like metals are disclosed for forming metallization films having low defect densities. Methods for manufacturing and using such targets are also disclosed. Conductivity anomalies such as those composed of metal |
| 6046100 |
Method of fabricating a fabricating plug and near-zero overlap interconnect line |
April 4, 2000 |
| A method of fabricating an electrically conductive plug on a semiconductor workpiece. A dielectric layer is deposited on the workpiece, and a cavity is etched in the dielectric. An etchant-resistant material is deposited on the wall of the cavity adjacent the cavity mouth so as to form a |
| 6001227 |
Target for use in magnetron sputtering of aluminum for forming metallization films having low de |
December 14, 1999 |
| Improved targets for use in DC.sub.-- magnetron sputtering of aluminum or like metals are disclosed for forming metallization films having low defect densities. Methods for manufacturing and using such targets are also disclosed. Conductivity anomalies such as those composed of metal |
| 5904562 |
Method of metallizing a semiconductor wafer |
May 18, 1999 |
| A method for metallizing semiconductor materials includes two processing steps. In the first step, a layer of an alloy of conductive metal, such as aluminum, and an Alloy Material such as hafnium, tantalum, magnesium, germanium, silicon, titanium, titanium nitride, tungsten and/or a |
| 5759360 |
Wafer clean sputtering process |
June 2, 1998 |
| A method of precleaning a silicon wafer to remove a layer of native silicon oxide thereon comprising adding a mixture of argon and oxygen to a plasma etch chamber including a wafer to be cleaned mounted on a cathode in said chamber, while maintaining the pressure in the chamber below abo |
| 5754297 |
Method and apparatus for monitoring the deposition rate of films during physical vapor depositio |
May 19, 1998 |
| A deposition rate monitor based on the measurement of optical attenuation is described for use in deposition equipment such as sputtering systems used to deposit thin metal films on semiconductor devices. A beam of light is passed through the region between a deposition source and the |
| 5747360 |
Method of metalizing a semiconductor wafer |
May 5, 1998 |
| A method for metallizing semiconductor materials includes two processing steps. In the first step, a layer of an alloy of conductive metal, such as aluminum, and an Alloy Material such as hafnium, tantalum, magnesium, germanium, silicon, titanium, titanium nitride, tungsten and/or a |
| 5698989 |
Film sheet resistance measurement |
December 16, 1997 |
| Apparatus and methods for measuring the sheet resistance of an electrically conductive film on a semiconductor substrate while maintaining the substrate within the vacuum environment of the semiconductor process apparatus. In one aspect of the invention, the conductive film is deposi |
| 5521120 |
Method for the formation of tin barrier layer with preferential (111) crystallographic orientati |
May 28, 1996 |
| A process is described for forming, over a silicon surface, a titanium nitride barrier layer having a surface of (111) crystallographic orientation. The process comprises: depositing a first titanium layer over a silicon surface; sputtering a titanium nitride layer over the titanium |
| 5460703 |
Low thermal expansion clamping mechanism |
October 24, 1995 |
| An improved clamping ring, useful for securing a semiconductor wafer during wafer processing, for example in a physical vapor deposition system, is made of a thermally nonconductive material having a low thermal coefficient of expansion, for example a ceramic material, such as alumina. |
| 5460689 |
High pressure plasma treatment method and apparatus |
October 24, 1995 |
| A method of precleaning a wafer including the steps of placing the wafer in a plasma chamber; flowing a gas into the plasma chamber; establishing a plasma in the chamber at a first pressure; after establishing the plasma, plasma etching the wafer at the first pressure for a first period |
| 5443995 |
Method for metallizing a semiconductor wafer |
August 22, 1995 |
| A method for metallizing semiconductor materials includes two processing steps. In the first step, a layer of an alloy of conductive metal, such as aluminum, and refractory metal, such as titanium, tungsten or silicon, is deposited on the surface in a single step from a single source. In |
| 5434044 |
Method for the formation of tin barrier layer with preferential (111) crystallographic orientati |
July 18, 1995 |
| A process is described for forming, over a silicon surface, a titanium nitride barrier layer having a surface of (111) crystallographic orientation. The process comprises: depositing a first titanium layer over a silicon surface; sputtering a titanium nitride layer over the titanium |
| 5360996 |
Titanium nitride/titanium silicide multiple layer barrier with preferential (111) crystallograph |
November 1, 1994 |
| A process is described for forming, over a silicon surface, a titanium nitride barrier layer having a surface of (111) crystallographic orientation. The process comprises: depositing a first titanium layer over a silicon surface; sputtering a titanium nitride layer over the titanium |
| 5356835 |
Method for forming low resistance and low defect density tungsten contacts to silicon semiconduc |
October 18, 1994 |
| An improved process is described for forming planar tungsten-filled contacts to a silicon substrate in contact openings through an insulating layer which provides for the formation of titanium silicide in and on the silicon surface at the bottom of the contact openings to provide low |
| 5288665 |
Process for forming low resistance aluminum plug in via electrically connected to overlying patt |
February 22, 1994 |
| A process is described for forming an aluminum plug in a via in an insulating layer in an integrated circuit structure by first depositing a layer of aluminum over the insulating layer in a multistep deposition which will also result in filling the via with aluminum to form an alumin |
| 5250467 |
Method for forming low resistance and low defect density tungsten contacts to silicon semiconduc |
October 5, 1993 |
| An improved process is described for forming planar tungsten-filled contacts to a silicon substrate in contact openings through an insulating layer which provides for the formation of titanium silicide in and on the silicon surface at the bottom of the contact openings to provide low |
| 5242860 |
Method for the formation of tin barrier layer with preferential (111) crystallographic orientati |
September 7, 1993 |
| A process is described for forming, over a silicon surface, a titanium nitride barrier layer having a surface of (111) crystallographic orientation. The process comprises: depositing a first titanium layer over a silicon surface; sputtering a titanium nitride layer over the titanium |
| 5236868 |
Formation of titanium nitride on semiconductor wafer by reaction of titanium with nitrogen-beari |
August 17, 1993 |
| A process is disclosed for forming a layer of titanium nitride on a semiconductor wafer which comprises forming a titanium layer on the wafer in a vacuum deposition chamber in the substantial absence of oxygen-bearing gases; transferring the titanium coated wafer to a sealed annealin |
| 5098198 |
Wafer heating and monitor module and method of operation |
March 24, 1992 |
| The temperature of a semiconductor wafer during annealing of metallization is accurately and indirectly monitored by supporting the wafer on a thin susceptor of constant emissivity and monitoring the temperature of the susceptor. The system has the added advantage of providing efficient, |
| 5043300 |
Single anneal step process for forming titanium silicide on semiconductor wafer |
August 27, 1991 |
| An improved process is disclosed for forming a conductive layer of titanium silicide on a silicon semiconductor wafer using a single annealing step which comprises the steps of forming a titanium layer over the wafer in a vacuum deposition chamber in the substantial absence of oxygen-bea |
| 4919542 |
Emissivity correction apparatus and method |
April 24, 1990 |
| Radiation detectors and method measure the emissivity of a remote, heated semiconductor wafer in the presence of ambient radiation. Incident radiation within a selected waveband from a controlled source intermittently radiates the remote wafer, and reflected radiation therefrom is de |
