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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Novet; Thomas
Address:
Corvallis, OR
No. of patents:
11
Patents:












Patent Number Title Of Patent Date Issued
8573741 Fluid-ejection assembly substrate having rounded ribs November 5, 2013
A fluid-ejection assembly includes a die, a substrate, ribs, and adhesive. The die has nozzles through which fluid is ejected. The substrate provides the fluid to the die. The ribs are within the substrate, and have rounded corners. The rounded corners are adapted to provide a predet
7149155 Channeled dielectric re-recordable data storage medium December 12, 2006
A re-recordable data storage medium is disclosed. One embodiment of the medium includes a dielectric material and a filler material. The dielectric material is organized in columnar channels over which memory cells are logically distributed. The filler material is within the columnar
7049158 Method of manufacturing an emitter May 23, 2006
A method is disclosed for creating an emitter having a flat cathode emission surface: First a protective layer that is conductive is formed on the flat cathode emission surface. Then an electronic lens structure is created over the protective layer. Finally, the protective layer is e
7044823 Method of making a tunneling emitter May 16, 2006
An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed on the tunneling
6933517 Tunneling emitters August 23, 2005
An emitter includes an electron supply and a tunneling layer disposed on the electron supply. A cathode layer is disposed on the tunneling layer. A conductive electrode has multiple layers of conductive material. The multiple layers include a protective layer disposed on the cathode laye
6902458 Silicon-based dielectric tunneling emitter June 7, 2005
An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings def
6787792 Emitter with filled zeolite emission layer September 7, 2004
An emitter includes an electron supply layer, a dielectric layer on the electron supply layer defining an emission area, and a filled zeolite emission layer within the defined emission area and in contact with the electron supply layer. The filled zeolite emission layer holds a semic
6783418 Emitter with filled zeolite emission layer August 31, 2004
An emitter includes an electron supply layer, a dielectric layer on the electron supply layer defining an emission area, and a filled zeolite emission layer within the defined emission area and in contact with the electron supply layer. The filled zeolite emission layer holds a semic
6781146 Annealed tunneling emitter August 24, 2004
An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the tunneling layer is formed. A cathode layer is formed on the tunneling layer t
6753544 Silicon-based dielectric tunneling emitter June 22, 2004
An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings def
6703252 Method of manufacturing an emitter March 9, 2004
A method is disclosed for creating an emitter having a flat cathode emission surface: First a protective layer that is conductive is formed on the flat cathode emission surface. Then an electronic lens structure is created over the protective layer. Finally, the protective layer is etche










 
 
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