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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Nojiri; Hidetoshi
Address:
Hadano, JP
No. of patents:
13
Patents:












Patent Number Title Of Patent Date Issued
6541386 Method for producing a structure with narrow pores April 1, 2003
Provided is a method for producing regularly ordered narrow pores excellent in linearity, and a structure with such narrow pores. A method for producing a narrow pore comprises a step of radiating a particle beam onto a workpiece, and a step of carrying out anodic oxidation of the workpi
6214738 Method for producing narrow pores and structure having the narrow pores, and narrow pores and st April 10, 2001
Provided is a method for producing regularly ordered narrow pores excellent in linearity, and a structure with such narrow pores. A method for producing a narrow pore comprises a step of radiating a particle beam onto a workpiece, and a step of carrying out anodic oxidation of the workpi
5926497 Diffraction grating with alternately-arranged different regions, optical semiconductor device wi July 20, 1999
A diffraction grating includes first regions for mainly reflecting first polarized light and second regions for mainly reflecting second polarized light. The first regions and the second regions are alternately arranged in a light propagation direction in a variety of manners to appropri
5613020 Optical devices having a periodical current restraint layer and optical communication systems us March 18, 1997
An optical device for performing a light power transfer between two waveguides that includes a first waveguide, a second waveguide, a transfer rate control element for controlling a light power transfer rate between the first and second waveguides and an electric element for electrically
5298739 Photodetector capable of sweeping out unwanted carriers and an optical communication system incl March 29, 1994
A light absorbing layer is formed in a photodetector that receives and detects light guided therein. Carriers are generated in the light absorbing layer in response to the guided light. Unwanted carriers likely to be generated in regions other than the light absorbing layer when light
5287422 Integrated type optical node and optical information system using the same February 15, 1994
This specification discloses an integrated type optical node comprising a substrate, a channel light waveguide formed on the substrate for connecting the transmission lines of an optical information system, an amplifying portion provided on the light waveguide for amplifying a light
5285514 Waveguide type photodetector and a method of fabricating the same February 8, 1994
In a waveguide type photodetector for receiving and detecting a light guided thereinto, a groove is formed in a semiconductor substrate, a waveguide layer is formed on the semiconductor substrate, and a light absorbing layer for absorbing a light propagated through a waveguide in the
5222163 Integrated type optical node and optical information system using the same June 22, 1993
This specification discloses an integrated type optical node comprising a substrate, a channel light waveguide formed on the substrate for connecting the transmission lines of an optical information system, an amplifying portion provided on the light waveguide for amplifying a light
5220573 Optical apparatus using wavelength selective photocoupler June 15, 1993
The present invention relates to optical apparatus such as a photosensor, a semiconductor laser, an optical amplifier in which a wavelength selective photocoupler is used so as to couple two waveguides through a diffraction grating. A photosensor which is one of the optical apparatus acc
5196717 Field effect transistor type photo-detector March 23, 1993
A field effect type photo-detector comprises a semiconductor buffer layer arranged on a substrate. A semiconductor activation layer is arranged on that buffer layer, and a source electrode, a drain electrode and a gate electrode are arranged on the activation layer. A depletion layer for
5140149 Optical apparatus using wavelength selective photocoupler August 18, 1992
The present invention relates to optical apparatus such as a photosensor, a semiconductor laser, an optical amplifier in which a wavelength selective photocoupler is used so as to couple two waveguides through a diffraction grating.A photosensor which is one of the optical apparatus acco
5109444 Integrated type optical node and optical information system using the same April 28, 1992
This specification discloses an integrated type optical node comprising a substrate, a channel light waveguide formed on the substrate for connecting the transmission lines of an optical information system, an amplifying portion provided on the light waveguide for amplifying a light
5032710 Photodetector to detect a light in different wavelength regions through clad layer having differ July 16, 1991
A photodetector comprises a waveguide layer to propagate lights, a clad layer which is laminated onto the waveguide layer and has a refractive index smaller than that of the waveguide layer, the clad layer having at least two portions having different thicknesses, and photoelectric c










 
 
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